Vol. 53, No. 2, 2019

Semiconductors

Review

Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)

S. A. Karandashev, B. A. Matveev and M. A. Remennyi p. 139 abstract

Electronic Properties of Semiconductors

Features of the Properties of Rare-Earth Semiconductors

V. V. Kaminski and N. V. Sharenkova p. 150 abstract

Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. E. Kalyadin, E. O. Parshin and N. S. Melesov p. 153 abstract

Spectroscopy, Interaction with Radiation

Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions

N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. O. Parshin, N. S. Melesov and C. G. Simakin p. 156 abstract

Surfaces, Interfaces, and Thin Films

Laser Annealing of Thin ITO Films on Flexible Organic Substrates

L. S. Parshina, O. A. Novodvorsky, O. D. Khramova, A. A. Lotin, M. D. Khomenko and P. A. Shchur p. 160 abstract

Structural, Optical, and Photosensitive Properties of PbS Films Deposited in the Presence of CaCl₂

L. N. Maskaeva, E. V. Mostovshchikova, V. F. Markov and V. I. Voronin p. 165 abstract

Technique for the Formation of Antireflection Coatings Based on ITO Films

L. K. Markov, A. S. Pavluchenko and I. P. Smirnova p. 172 abstract

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers

S. A. Kukushkin, A. M. Mizerov, A. S. Grashchenko, A. V. Osipov, E. V. Nikitina, S. N. Timoshnev, A. D. Bouravlev and M. S. Sobolev p. 180 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electronic Excitation Energy Transfer in an Array of CdS Quantum Dots on a Quasi-Two-Dimensional Surface

N. V. Bondar, M. S. Brodyn, N. A. Matveevskaya and T. G. Beynik p. 188 abstract

Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region

A. A. Bloshkin, A. I. Yakimov and A. V. Dvurechenskii p. 195 abstract

Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance

N. Yu. Gordeev, A. S. Payusov, I. S. Mukhin, A. A. Serin, M. M. Kulagina, Yu. A. Guseva, Yu. M. Shernyakov, Yu. M. Zadiranov and M. V. Maximov p. 200 abstract

Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light

L. S. Basalaeva, Yu. V. Nastaushev, F. N. Dultsev, N. V. Kryzhanovskaya and E. I. Moiseev p. 205 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Influence of Electric Field on the Activation Energy of Local Levels in Semiconductors with Layered (GaSe) and Cubic (Ga₂Se₃) Structures

A. M. Pashayev, B. H. Tagiyev, O. B. Tagiyev, V. T. Majidova and I. Z. Sadikhov p. 210 abstract

Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides

A. P. Novitskii, I. A. Serhiienko, S. V. Novikov, K. V. Kuskov, D. V. Leybo, D. S. Pankratova, A. T. Burkov and V. V. Khovaylo p. 215 abstract

Thermoresistive Semiconductor SiC/Si Composite Material

S. K. Brantov and E. B. Yakimov p. 220 abstract

Optical Properties of Polyethylene Filled with Bi₂Te₃ Nanocrystallites

A. Yu. Gamzayeva, E. G. Alizade, N. T. Mamedov, N. A. Abdullayev, I. R. Amiraslanov, Y. N. Aliyeva, Kh. N. Akhmedova, G. H. Azhdarov, K. Sh. Kahramanov and S. A. Nemov p. 224 abstract

Physics of Semiconductor Devices

Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates

M. B. Shalimova and N. V. Sachuk p. 229 abstract

Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent

E. A. Grebenshchikova, V. G. Sidorov, V. A. Shutaev and Yu. P. Yakovlev p. 234 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers

E. V. Erofeev, I. V. Fedin, V. V. Fedina and A. P. Fazleev p. 237 abstract

Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers

I. E. Tyschenko, I. V. Popov and E. V. Spesivtsev p. 241 abstract

Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates

G. B. Galiev, E. A. Klimov, A. N. Klochkov, V. B. Kopylov and S. S. Pushkarev p. 246 abstract

Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering

S. V. Zaitsev, V. S. Vaschilin, V. V. Kolesnik, M. V. Limarenko, D. S. Prokhorenkov and E. I. Evtushenko p. 255 abstract

On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method

R. V. Levin, V. N. Nevedomskyi, N. L. Bazhenov, G. G. Zegrya, B. V. Pushnyi and M. N. Mizerov p. 260 abstract

Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves

N. A. Viglin, I. V. Gribov, V. M. Tsvelikhovskaya and E. I. Patrakov p. 264 abstract

Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile

D. S. Frolov, G. E. Yakovlev and V. I. Zubkov p. 268 abstract

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