Vol. 50, No. 2, 2016

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

On the Theory of the Two-Photon Linear Photovoltaic Effect in n-GaP

V. R. Rasulov and R. Ya. Rasulov p. 145 abstract

Compositional Dependence of the Band Gap of (CuIn₅S₈)_{1 –} _x · (FeIn₂S₄)_x Alloys

I. V. Bodnar, I. A. Victorov, M. A. Jaafar and S. A. Pauliukavets p. 154 abstract

Spectroscopy, Interaction with Radiation

Photoluminescence Properties of Thallium-Containing GeSe₂ and GeSe₃ Vitreous Semiconductors

A. A. Babaev p. 158 abstract

Surfaces, Interfaces, and Thin Films

On the Surface Photovoltaic Effect in a Multivalley Semiconductor in an External Magnetic Field

V. R. Rasulov and R. Ya. Rasulov p. 162 abstract

Study of the Surface of GaAs after Etching in High-Frequency and Glow Discharge Plasma by Atomic Force Microscopy

A. V. Dunaev, D. B. Murin and S. A. Pivovarenok p. 167 abstract

Halogen Adsorption at an As-Stabilized β2–GaAs (001)–(2 × 4) Surface

A. V. Bakulin and S. E. Kulkova p. 171 abstract

On the Electrical and Optical Properties of Oxide Nanolayers Produced by the Thermal Oxidation of Metal Tin

S. V. Ryabtsev, O. A. Chuvenkova, S. V. Kannykin, A. E. Popov, N. S. Ryabtseva, S. S. Voischev, S. Yu. Turishchev and E. P. Domashevskaya p. 180 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electron Transport and Optical Properties of Structures with Atomic Tin Nanowires on Vicinal GaAs Substrates

R. A. Khabibullin, A. E. Yachmenev, D. V. Lavrukhin, D. S. Ponomarev, A. S. Bugayev and P. P. Maltsev p. 185 abstract

Influence of Defects on the Photoluminescence Kinetics in GaN/AlN Quantum-Dot Structures

I. A. Aleksandrov, K. S. Zhuravlev and V. G. Mansurov p. 191 abstract

Structural and Photoluminescence Properties of Low-Temperature GaAs Grown on GaAs(100) and GaAs(111)A Substrates

G. B. Galiev, E. A. Klimov, M. M. Grekhov, S. S. Pushkarev, D. V. Lavrukhin and P. P. Maltsev p. 195 abstract

GaAs Structures with a Gate Dielectric Based on Aluminum-Oxide Layers

I. L. Kalentyeva, O. V. Vikhrova, A. V. Zdoroveyshchev, Yu. A. Danilov and A. V. Kudrin p. 204 abstract

Defects in Mercury-Cadmium Telluride Heteroepitaxial Structures Grown by Molecular-Beam Epitaxy on Silicon Substrates

K. D. Mynbaev, S. V. Zablotsky, A. V. Shilyaev, N. L. Bazhenov, M. V. Yakushev, D. V. Marin, V. S. Varavin and S. A. Dvoretsky p. 208 abstract

Amorphous, Vitreous, and Organic Semiconductors

Composition and Optical Properties of Amorphous a-SiO_x:H Films with Silicon Nanoclusters

V. A. Terekhov, E. I. Terukov, Yu. K. Undalov, E. V. Parinova, D. E. Spirin, P. V. Seredin, D. A. Minakov and E. P. Domashevskaya p. 212 abstract

Carbon Systems

Effect of Transverse Electric Field on the Longitudinal Current–Voltage Characteristic of Graphene Superlattice

S. V. Kryuchkov and E. I. Kukhar’ p. 217 abstract

Physics of Semiconductor Devices

Laser-Assisted Simulation of Transient Radiation Effects in Heterostructure Components Based on AB Semiconductor Compounds

D. V. Gromov, P. P. Maltsev and S. A. Polevich p. 222 abstract

Pb_{1 –} _xEu_xTe Alloys (0 ≤ x ≤ 1) as Materials for Vertical-Cavity Surface-Emitting Lasers in the Mid-Infrared Spectral Range of 4–5 μm

D. A. Pashkeev, Yu. G. Selivanov, E. G. Chizhevskii and I. I. Zasavitskiy p. 228 abstract

Field-Effect Transistor with 2D Carrier Systems in the Gate and Channel

V. G. Popov p. 235 abstract

Si:Si LEDs with Room-Temperature Dislocation-Related Luminescence

N. A. Sobolev, A. E. Kalyadin, M. V. Konovalov, P. N. Aruev, V. V. Zabrodskiy, E. I. Shek, K. F. Shtel’makh, A. N. Mikhaylov and D. I. Tetel’baum p. 240 abstract

Optimization of the Parameters of HEMT GaN/AlN/AlGaN Heterostructures for Microwave Transistors Using Numerical Simulation

V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. Vyuginov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsulnikov, N. A. Cherkashin, M. N. Mizerov and V. M. Ustinov p. 244 abstract

Effect of the Fabrication Conditions of SiGe LEDs on Their Luminescence and Electrical Properties

A. E. Kalyadin, N. A. Sobolev, A. M. Strel’chuk, P. N. Aruev, V. V. Zabrodskiy and E. I. Shek p. 249 abstract

Electroluminescence Properties of LEDs Based on Electron-Irradiated p-Si

N. A. Sobolev, K. F. Shtel’makh, A. E. Kalyadin, P. N. Aruev, V. V. Zabrodskiy, E. I. Shek and D. Yang p. 252 abstract

Method for Optimizing the Parameters of Heterojunction Photovoltaic Cells Based on Crystalline Silicon

A. V. Sachenko, Yu. V. Kryuchenko, V. P. Kostylyov, I. O. Sokolovskyi, A. S. Abramov, A. V. Bobyl, I. E. Panaiotti and E. I. Terukov p. 257 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Features of InN Growth by Nitrogen-Plasma-Assisted MBE at Different Ratios of Fluxes of Group-III and -V Elements

D. N. Lobanov, A. V. Novikov, B. A. Andreev, P. A. Bushuykin, P. A. Yunin, E. V. Skorohodov and L. V. Krasilnikova p. 261 abstract

Light-Emitting Nanocomposites on the Basis of ZnS:Cu Deposited into Porous Anodic Al₂O₃ Matrices

R. G. Valeev, D. I. Petukhov, A. I. Chukavin and A. N. Beltiukov p. 266 abstract

Layer-by-Layer Composition and Structure of Silicon Subjected to Combined Gallium and Nitrogen Ion Implantation for the Ion Synthesis of Gallium Nitride

D. S. Korolev, A. N. Mikhaylov, A. I. Belov, V. K. Vasiliev, D. V. Guseinov, E. V. Okulich, A. A. Shemukhin, S. I. Surodin, D. E. Nikolitchev, A. V. Nezhdanov, A. V. Pirogov, D. A. Pavlov and D. I. Tetelbaum p. 271 abstract

Electrochemical Characteristics of Nanostructured Silicon Anodes for Lithium-Ion Batteries

E. V. Astrova, G. V. Li, A. M. Rumyantsev and V. V. Zhdanov p. 276 abstract

Contents