Contents
Semiconductors

Vol. 47, No. 2, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012

Light Emission from Silicon Nanocrystals

O. B. Gusev, A. N. Poddubny, A. A. Prokofiev, and I. N. Yassievich p. 183  abstract

Monoisotopic Silicon ²⁸Si in Spin Resonance Spectroscopy of Electrons Localized at Donors

A. A. Ezhevskii, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov, V. A. Gavva, A. V. Gusev,
N. V. Abrosimov, and H. Riemann p. 203  abstract

Utilization of Silicon Detectors with “Ideal-Diode” Current–Voltage Characteristics

V. L. Sukhanov, P. N. Aruev, M. V. Drozdova, N. V. Zabrodskaya, V. V. Zabrodskiy,
M. S. Lazeeva, V. V. Filimonov, and E. V. Sherstnev p. 209  abstract

Photoresponse Recovery in Silicon Photodiodes upon VUV Irradiation

V. V. Zabrodskiy, P. N. Aruev, V. P. Belik, B. Ya. Ber, D. Yu. Kazantsev, M. V. Drozdova,
N. V. Zabrodskaya, M. S. Lazeeva, A. D. Nikolenko, V. L. Sukhanov,
V. V. Filimonov, and E. V. Sherstnev p. 213  abstract

Radiation Effects in Si–Ge Quantum Size Structure (Review)

N. A. Sobolev p. 217  abstract

Annealing Kinetics of Boron-Containing Centers in Electron-Irradiated Silicon

O. V. Feklisova, N. A. Yarykin, and J. Weber p. 228  abstract

Influence of Metal Impurities on Recombination Activity
of Dislocations in Multicrystalline Silicon

O. V. Feklisova, X. Yu, D. Yang, and E. V. Yakimov p. 232  abstract

Shallow-Donor Lasers in Uniaxially Stressed Silicon

K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin, N. V. Abrosimov,
H. Riemann, S. G. Pavlov, and H.-W. Hbers p. 235  abstract

Damage Formation in Si under Irradiation with Ions of Different Energies

K. V. Karabeshkin, P. A. Karaseov, and A. I. Titov p. 242  abstract

Silicon with an Increased Content of Monoatomic Sulfur Centers:
Sample Fabrication and Optical Spectroscopy

Yu. A. Astrov, S. A. Lynch, V. B. Shuman, L. M. Portsel, A. A. Makhova, and A. N. Lodygin p. 247  abstract

Aligned Arrays of Zinc Oxide Nanorods on Silicon Substrates

A. N. Redkin, M. V. Ryzhova, E. E. Yakimov, and A. N. Gruzintsev p. 252  abstract

Electron Levels and Luminescence of Dislocation Networks Formed
by the Hydrophilic Bonding of Silicon Wafers

A. S. Bondarenko, O. F. Vyvenko, and I. A. Isakov p. 259  abstract

Regularities in the Formation of Dislocation Networks
on the Boundary of Bonded Si (001) Wafers

V. I. Vdovin, E. V. Ubyivovk, and O. F. Vyvenko p. 264  abstract

Optical Properties of Silicon with a High Content of Boron

L. I. Khirunenko, Yu. V. Pomozov, and M. G. Sosnin p. 269  abstract

Identification of Copper–Copper and Copper–Hydrogen Complexes in Silicon

N. A. Yarykin and J. Weber p. 275  abstract

Tunnel Field-Effect Transistors with Graphene Channels

D. A. Svintsov, V. V. Vyurkov, V. F. Lukichev, A. A. Orlikovsky, A. Burenkov, and R. Oechsner p.279  abstract

The Electrically Active Centers in Oxygen-Implanted Silicon

A. S. Loshachenko, O. F. Vyvenko, E. I. Shek, and N. A. Sobolev p. 285  abstract

Electrically Active Centers Formed in Silicon during
the High-Temperature Diffusion of Boron and Aluminum

N. A. Sobolev, A. S. Loshachenko, D. S. Poloskin, and E. I. Shek p. 289  abstract

Surfaces, Interfaces, and Thin Films

Determination of the Thickness and Spectral Dependence of the Refractive Index
of Al_xIn_1–xSb Epitaxial Layers from Reflectance Spectra

O. S. Komkov, D. D. Firsov, A. N. Semenov, B. Ya. Meltser, S. I. Troshkov,
A. N. Pikhtin, and S. V. Ivanov p. 292  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Recrystallization of Silicon-on-Sapphire Structures
at Various Amorphization-Ion-Beam Energies

P. A. Alexandrov, K. D. Demakov, S. G. Shemardov, and Yu. Yu. Kuznetsov p. 298  abstract

Carbon Systems

Structure and Transport Properties of Nanocarbon Films Prepared
by Sublimation on a 6H-SiC Surface

N. V. Agrinskaya, V. A. Berezovets, V. I. Kozub, I. S. Kotousova, A. A. Lebedev,
S. P. Lebedev, and A. A. Sitnikova p. 301  abstract

Physics of Semiconductor Devices

High-Efficiency GaSb Photocells

V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, N. Kh. Timoshina,
N. S. Potapovich, B. Ya. Ber, D. Yu. Kazantsev, and V. M. Andreev p.307  abstract

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