Contents
Semiconductors


Vol. 46, No. 2, 2012

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Kinetics of Crack Formation in Porous Silicon

D. S. Gaev and S. Sh. Rekhviashvili p. 137  abstract


Electronic Properties of Semiconductors

Determination of the Ionization Energy of Vanadium Levels in Zinc Selenide

V. P. Makhniy and O. V. Kinzerskaya p. 141  abstract


Spectroscopy, Interaction with Radiation

Generation of Terahertz Radiation by a Surface Ballistic Photocurrent
in Semiconductors under Subpicosecond Laser Excitation

P. A. Ziaziulia, V. L. Malevich, I. S. Manak, and A. Krotkus p. 143  abstract

Effect of Annealing on the Luminescence of p-CuI Crystals

A. N. Gruzintsev and W. N. Zagorodnev p. 149  abstract


Surfaces, Interfaces, and Thin Films

Phenomenon of the Inverse Adsorption Piezoelectric Effect
in CdTe and CdHgTe Semiconductors

O. A. Fedyaeva p. 155  abstract


Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Generation of Electromagnetic Radiation Based on Nanotubes
under a Constant Electric Field and an Electromagnetic Wave Field

N. R. Sadykov and N. A. Scorkin p. 159  abstract

Exciton States in Quasi-Zero-Dimensional Semiconductor Nanosystems

S. I. Pokutnyi p. 165  abstract

Heat Induced Nanoforms of Zinc Oxide Quantum Dots and Their Characterization

Anindita Dey, Ruma Basu, Sukhen Das, and Papiya Nandy p. 171  abstract

Effect of Postgrowth Heat Treatment on the Structural
and Optical Properties of InP/InAsP/InP Nanowires

G. E. Cirlin, M. Tchernycheva, G. Patriarche, and J.-C. Harmand p. 175  abstract

Formation of (Ga,Mn)As Nanowires and Study of their Magnetic Properties

A. D. Bouravleuv, G. E. Cirlin, V. V. Romanov, N. T. Bagraev, E. S. Brilinskaya,
N. A. Lebedeva, S. V. Novikov, H. Lipsanen, and V. G. Dubrovskii
p. 179  abstract

Influence of Defect Formation as a Result of Incorporation of a Mn Layer
on the Photosensitiviy Spectrum of InGaAs/GaAs Quantum Wells

A. P. Gorshkov, I. A. Karpovich, E. D. Pavlova, and I. L. Kalenteva p. 184  abstract


Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Structural Transformations in ZnS:Cu in the Course of Thermal Annealing

Yu. Yu. Bacherikov, N. E. Korsunska, V. P. Kladko, E. F. Venger, N. P. Baran,
A. V. Kuchuk, and A. G. Zhuk
p.188  abstract


Carbon Systems

Adsorption-Induced Energy Gap in the Density of States of Single-Sheet Graphene

S. Yu. Davydov p. 193  abstract

Insulator Band Gap in Single-Side-Hydrogenated Graphene Nanoribbons

L. A. Openov and A. I. Podlivaev p. 199  abstract


Physics of Semiconductor Devices

Characteristics of InGaP/InGaAs Pseudomorphic High Electron Mobility Transistors
with Triple Delta-Doped Sheets

Kuei-Yi Chu, Meng-Hsueh Chiang, Shiou-Ying Cheng, and Wen-Chau Liu p. 203  abstract

Low-Frequency Noise in as-Fabricated and Degraded Blue InGaAs/GaN LEDs

A. L. Zakheim, M. E. Levinshtein, V. P. Petrov, A. E. Chernyakov,
E. I. Shabunina, and N. M. Shmidt
p. 208  abstract

Numerical Simulation of Optical Feedback on a Quantum Dot Lasers

Amin H. Al-Khursan, Basim Abdullattif Ghalib, and Sabri J. Al-Obaidi p. 213  abstract

Photosensitivity of ZnO/CdS/Cu(In, Ga)Se2/Mo Thin-Film Solar Cells
Fabricated on Various Substrates

V. Yu. Rud, Yu. V. Rud, V. F. Gremenok, E. I. Terukov, B. Kh. Bairamov, and Y. W. Song p. 221  abstract

Effect of an Excited-State Optical Transition
on the Linewidth Enhancement Factor of Quantum Dot Lasers

A. E. Zhukov, A. V. Savelyev, M. V. Maximov, Yu. M. Shernyakov, E. M. Arakcheeva,
F. I. Zubov, A. A. Krasivichev, and N. V. Kryzhanovskaya
p. 225  abstract

Features of Simultaneous Ground- and Excited-State Lasing in Quantum Dot Lasers

A. E. Zhukov, M. V. Maximov, Yu. M. Shernyakov, D. A. Livshits, A. V. Savelyev,
F. I. Zubov, and V. V. Klimenko
p. 231  abstract

Study of the Emission Extraction Efficiency of mesa-LEDs
with a Narrow-Gap InAsSb Active Region

E. A. Grebenshchikova, A. N. Imenkov, S. S. Kizhaev, A. S. Golovin, and Yu. P. Yakovlev p. 236  abstract

High-Order Diffraction Gratings for High-Power Semiconductor Lasers

V. V. Vasil’eva, D. A. Vinokurov, V. V. Zolotarev, A. Yu. Leshko, A. N. Petrunov,
N. A. Pikhtin, M. G. Rastegaeva, Z. N. Sokolova, I. S. Shashkin, and I. S. Tarasov
p. 241  abstract

Nonuniformity in the Spatial Distribution of Negative Luminescence
in InAsSb(P) Photodiodes (Long-Wavelength Cutoff 0.1 = 5.2 m)

S. A. Karandashev, B. A. Matveev, I. V. Mzhelskii, V. G. Polovinkin, M. A. Remennyi,
A. Yu. Rybal’chenko, and N. M. Stus’
p. 247  abstract

Conduction Mechanism of an Infrared Emitting Diode:
Impedance Spectroscopy and Current–Voltage Analysis

Adem Dframe0nmez and Habibe Bayhan p. 251  abstract


Fabrication, Treatment, and Testing of Materials and Structures

Implantation of Sodium Ions into Germanium

V. M. Korol’ and Yu. Kudriavtsev p. 257  abstract

Combined Single-crystalline and Polycrystalline CVD Diamond Substrates
for Diamond Electronics

A. L. Vikharev, A. M. Gorbachev, M. P. Dukhnovsky, A. B. Muchnikov,
A. K. Ratnikova, and Yu. Yu. Fedorov
p. 263  abstract

The Effect of Annealing on the Properties of Ga2O3 Anodic Films

V. M. Kalygina, A. N. Zarubin, Ye. P. Nayden, V. A. Novikov, Yu. S. Petrova,
O. P. Tolbanov, A. V. Tyazhev, and T. M. Yaskevich
p.267  abstract


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