Contents
Semiconductors
Vol. 46, No. 2, 2012
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
Kinetics of Crack Formation in Porous Silicon
D. S. Gaev and S. Sh. Rekhviashvili p. 137 abstract
Electronic Properties of Semiconductors
Determination of the Ionization Energy of Vanadium Levels in Zinc Selenide
V. P. Makhniy and O. V. Kinzerskaya p. 141 abstract
Spectroscopy, Interaction with Radiation
Generation of Terahertz Radiation by a Surface Ballistic Photocurrent
in Semiconductors under Subpicosecond Laser Excitation
P. A. Ziaziulia, V. L. Malevich, I. S. Manak, and A. Krotkus p. 143 abstract
Effect of Annealing on the Luminescence of p-CuI Crystals
A. N. Gruzintsev and W. N. Zagorodnev p. 149 abstract
Surfaces, Interfaces, and Thin Films
Phenomenon of the Inverse Adsorption Piezoelectric Effect
in CdTe and CdHgTe Semiconductors
O. A. Fedyaeva p. 155 abstract
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Generation of Electromagnetic Radiation Based on Nanotubes
under a Constant Electric Field and an Electromagnetic Wave Field
N. R. Sadykov and N. A. Scorkin p. 159 abstract
Exciton States in Quasi-Zero-Dimensional Semiconductor Nanosystems
S. I. Pokutnyi p. 165 abstract
Heat Induced Nanoforms of Zinc Oxide Quantum Dots and Their Characterization
Anindita Dey, Ruma Basu, Sukhen Das, and Papiya Nandy p. 171 abstract
Effect of Postgrowth Heat Treatment on the Structural
and Optical Properties of InP/InAsP/InP Nanowires
G. E. Cirlin, M. Tchernycheva, G. Patriarche, and J.-C. Harmand p. 175 abstract
Formation of (Ga,Mn)As Nanowires and Study of their Magnetic Properties
A. D. Bouravleuv, G. E. Cirlin, V. V. Romanov, N. T. Bagraev, E. S. Brilinskaya,
N. A. Lebedeva, S. V. Novikov, H. Lipsanen, and V. G. Dubrovskii p. 179 abstract
Influence of Defect Formation as a Result of Incorporation of a Mn Layer
on the Photosensitiviy Spectrum of InGaAs/GaAs Quantum Wells
A. P. Gorshkov, I. A. Karpovich, E. D. Pavlova, and I. L. Kalenteva p. 184 abstract
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
Structural Transformations in ZnS:Cu in the Course of Thermal Annealing
Yu. Yu. Bacherikov, N. E. Korsunska, V. P. Kladko, E. F. Venger, N. P. Baran,
A. V. Kuchuk, and A. G. Zhuk p.188 abstract
Carbon Systems
Adsorption-Induced Energy Gap in the Density of States of Single-Sheet Graphene
S. Yu. Davydov p. 193 abstract
Insulator Band Gap in Single-Side-Hydrogenated Graphene Nanoribbons
L. A. Openov and A. I. Podlivaev p. 199 abstract
Physics of Semiconductor Devices
Characteristics of InGaP/InGaAs Pseudomorphic High Electron Mobility Transistors
with Triple Delta-Doped Sheets
Kuei-Yi Chu, Meng-Hsueh Chiang, Shiou-Ying Cheng, and Wen-Chau Liu p. 203 abstract
Low-Frequency Noise in as-Fabricated and Degraded Blue InGaAs/GaN LEDs
A. L. Zakheim, M. E. Levinshtein, V. P. Petrov, A. E. Chernyakov,
E. I. Shabunina, and N. M. Shmidt p. 208 abstract
Numerical Simulation of Optical Feedback on a Quantum Dot Lasers
Amin H. Al-Khursan, Basim Abdullattif Ghalib, and Sabri J. Al-Obaidi p. 213 abstract
Photosensitivity of ZnO/CdS/Cu(In, Ga)Se2/Mo Thin-Film Solar Cells
Fabricated on Various Substrates
V. Yu. Rud, Yu. V. Rud, V. F. Gremenok, E. I. Terukov, B. Kh. Bairamov, and Y. W. Song p. 221 abstract
Effect of an Excited-State Optical Transition
on the Linewidth Enhancement Factor of Quantum Dot Lasers
A. E. Zhukov, A. V. Savelyev, M. V. Maximov, Yu. M. Shernyakov, E. M. Arakcheeva,
F. I. Zubov, A. A. Krasivichev, and N. V. Kryzhanovskaya p. 225 abstract
Features of Simultaneous Ground- and Excited-State Lasing in Quantum Dot Lasers
A. E. Zhukov, M. V. Maximov, Yu. M. Shernyakov, D. A. Livshits, A. V. Savelyev,
F. I. Zubov, and V. V. Klimenko p. 231 abstract
Study of the Emission Extraction Efficiency of mesa-LEDs
with a Narrow-Gap InAsSb Active Region
E. A. Grebenshchikova, A. N. Imenkov, S. S. Kizhaev, A. S. Golovin, and Yu. P. Yakovlev p. 236 abstract
High-Order Diffraction Gratings for High-Power Semiconductor Lasers
V. V. Vasil’eva, D. A. Vinokurov, V. V. Zolotarev, A. Yu. Leshko, A. N. Petrunov,
N. A. Pikhtin, M. G. Rastegaeva, Z. N. Sokolova, I. S. Shashkin, and I. S. Tarasov p. 241 abstract
Nonuniformity in the Spatial Distribution of Negative Luminescence
in InAsSb(P) Photodiodes (Long-Wavelength Cutoff 0.1 = 5.2
m)
S. A. Karandashev, B. A. Matveev, I. V. Mzhelskii, V. G. Polovinkin, M. A. Remennyi,
A. Yu. Rybal’chenko, and N. M. Stus’ p. 247 abstract
Conduction Mechanism of an Infrared Emitting Diode:
Impedance Spectroscopy and Current–Voltage Analysis
Adem Dnmez and Habibe Bayhan p. 251 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Implantation of Sodium Ions into Germanium
V. M. Korol’ and Yu. Kudriavtsev p. 257 abstract
Combined Single-crystalline and Polycrystalline CVD Diamond Substrates
for Diamond Electronics
A. L. Vikharev, A. M. Gorbachev, M. P. Dukhnovsky, A. B. Muchnikov,
A. K. Ratnikova, and Yu. Yu. Fedorov p. 263 abstract
The Effect of Annealing on the Properties of Ga2O3 Anodic Films
V. M. Kalygina, A. N. Zarubin, Ye. P. Nayden, V. A. Novikov, Yu. S. Petrova,
O. P. Tolbanov, A. V. Tyazhev, and T. M. Yaskevich p.267 abstract
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