Contents
Semiconductors

Vol. 45, No. 2, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Energy Distribution of Recoil Atoms and Formation of Radiation Defects
in Silicon Carbide Films under Proton Irradiation

A. M. Ivanov, V. V. Kozlovski, N. B. Strokan, and A. A. Lebedev p. 141  abstract

Effect of Annealing on the Electrical Properties of Thallium-Doped PbTe Single Crystals

G. A. Ahmedova, G. J. Abdinova, and J. Sh. Abdinov p. 145  abstract

Electronic Properties of Semiconductors

Manifestation of Light and Heavy Electrons in the Galvanomagnetic Characteristics
of Te-Doped n-Bi_0.88Sb_0.12 Single Crystals

B. A. Tairov, O. I. Ibragimova, A. H. Rahimov, and R. Brazis p. 148  abstract

Photoresponse Asymmetry of CdZnTe Crystals

A. V. But, V. P. Mygal, and A. S. Phomin p. 153  abstract

On the Magnetic Phase Transition in Strongly Chained TlFeS₂
and TlFeSe₂ Semiconductors

R. G. Veliyev p. 158  abstract

Spectroscopy, Interaction with Radiation

Photoelectric and Luminescent Properties of Dysprosium-Doped Silver Chloride

G. F. Novikov, E. V. Rabenok, K. V. Bocharov, N. V. Lichkova,
O. V. Ovchinnikov, and A. N. Latyshev p. 162  abstract

Surfaces, Interfaces, and Thin Films

Photovoltaic Properties of Interfaces of Organic Films
of Substituted Perylene with TiO₂ and SnO₂ Surfaces

A. S. Komolov, E. F. Lazneva, S. A. Komolov, I. S. Busin, and M. V. Zimina p. 169  abstract

Determination of the Density of Surface States at the Semiconductor–Insulator Interface
in a Metal–Insulator–Semiconductor Structure

G. Gulyamov and N. U. Sharibaev p. 174  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Trapping of Charge Carriers into InAs/AlAs Quantum Dots at Liquid-Helium Temperature

D. S. Abramkin, K. S. Zhuravlev, T. S. Shamirzaev, A. V. Nenashev, and A. K. Kalagin p. 179  abstract

Semiconductor Surface Potential Relaxation in the MIS Structure
in the Presence of Convective Currents in Insulator and through its Boundaries

S. G. Dmitriev p. 188  abstract

Modulation Waves of Charge Carriers in n- and p-Type Semiconductor Layers

T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, and S. N. Yurkov p. 192  abstract

Photoluminescence Line Width of Self-Assembled Ge(Si) Islands
Arranged between Strained Si Layers

M. V. Shaleev, A. V. Novikov, N. A. Baydakova, A. N. Yablonskiy,
O. A. Kuznetsov, D. N. Lobanov, and Z. F. Krasilnik p. 198  abstract

Piecewise Parabolic Negative Magnetoresistance of Two-Dimensional Electron Gas
with Triangular Antidot Lattice

M. V. Budantsev, R. A. Lavrov, A. G. Pogosov, E. Yu. Zhdanov, and D. A. Pokhabov p.203  abstract

Excitons in Single and Double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe
Heterovalent Quantum Wells

A. A. Toropov, V. Kh. Kaibyshev, Ya. V. Terent’ev, S. V. Ivanov, and P. S. Kop’ev p. 208  abstract

The Ratio of the Hole and Electron Exchange Integrals
in a CdMnSe/ZnSe Diluted Magnetic Structure with Quantum Dots

I. I. Reshina and S. V. Ivanov p. 215  abstract

Frequency and Temperature Dependences of Capacitance–Voltage Characteristics
of InGaN/GaN Light-Emitting Structures with Multiple Quantum Wells

O. A. Soltanovich, N. M. Shmidt, and E. B. Yakimov p. 221  abstract

Comparative Analysis of Radiation Effects on the Electroluminescence
of Si and SiGe/Si(001) Heterostructures with Self-Assembled Islands

Z. F. Krasilnik, K. E. Kudryavtsev, A. N. Kachemtsev, D. N. Lobanov,
A. V. Novikov, S. V. Obolenskiy, and D. V. Shengurov p. 225  abstract

Amorphous, Vitreous, and Organic Semiconductors

Quasi-Equilibrium Hopping Drift and Field-Stimulated Diffusion
in Ultrathin Layers of Organic Materials

N. A. Korolev, V. R. Nikitenko, and D. V. Ivanov p. 230  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Optical Generation of Free Charge Carriers in Thin Films of Tin Oxide

I. A. Zhurbina, O. I. Tsetlin, and V. Yu. Timoshenko p. 236  abstract

Physics of Semiconductor Devices

Spectral Width of Laser Generation in Quantum Dot Lasers: An Analytical Approach

A. V. Savelyev, M. V. Maximov, and A. E. Zhukov p. 241  abstract

Photovoltaic Detector Based on Type II Heterostructure with Deep AlSb/InAsSb/AlSb
Quantum Well in the Active Region for the Midinfrared Spectral Range

M. P. Mikhailova, I. A. Andreev, K. D. Moiseev, E. V. Ivanov, G. G. Konovalov,
M. Yu. Mikhailov, and Yu. P. Yakovlev p. 248  abstract

Effect of p–n Junction Overheating on Degradation
of Silicon High-Power Pulsed IMPATT Diodes

A. E. Belyaev, V. V. Basanets, N. S. Boltovets, A. V. Zorenko, L. M. Kapitanchuk,
V. P. Kladko, R. V. Konakova, N. V. Kolesnik, T. V. Korostinskaya, T. V. Kritskaya,
Ya. Ya. Kudryk, A. V. Kuchuk, V. V. Milenin, and A. B. Ataubaeva p. 253  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Electron Probe Microanalysis of Heterostructures with Nanolayers

T. B. Popova, L. A. Bakaleinikov, E. Yu. Flegontova, A. A. Shakhmin, and M. V. Zamoryanskaya p. 260  abstract

Crystallization of Hydrogenated Amorphous Silicon Films by Exposure
to Femtosecond Pulsed Laser Radiation

V. A. Volodin and A. S. Kachko p. 265  abstract

Influence of Hydrogen on Local Phase Separation in InGaN Thin Layers
and Properties of Light-Emitting Structures Based on Them

A. F. Tsatsulnikov, W. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. V. Sakharov,
V. S. Sizov, S. O. Usov, Yu. G. Musikhin^†, and D. Gerthsen p.271
 abstract

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