Contents
Semiconductors

Vol. 44, No. 2, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Propertties of Semiconductors

Electroplasticity of Undoped and Doped Silicon

A. R. Velikhanov p. 137  abstract

Electrical and Optical Properties of Semiconductors

Preparation and Optical Properties of ZnSe:Ni Crystals

Yu. F. Vaksman, Yu. A. Nitsuk, V. V. Yatsun, A. S. Nasibov, and P. V. Shapkin p. 141  abstract

Instability of the Current of the Longitudinal Autosoliton in p-InSb
in a Longitudinal Magnetic Field

I. K. Kamilov, A. A. Stepurenko, and A. E. Gummetov p. 145  abstract

Anomalous Scattering of Electrons in n-Si Crystals Irradiated with Protons

T. A. Pagava and N. I. Maisuradze p. 151  abstract

The Conductivity and Magnetic Properties
of Zinc Oxide Thin Films Doped with Cobalt

V. G. Kytin, V. A. Kulbachinskii, D. S. Glebov, L. I. Burova,
A. R. Kaul, and O. V. Reukova p. 155  abstract

Resonant Raman Scattering and Dispersion of Polar Optical
and Acoustic Phonons in Hexagonal InN

V. Yu. Davydov, A. A. Klochikhin, A. N. Smirnov, I. Yu. Strashkova,
A. S. Krylov, Hai Lu, William J. Schaff, H.-M. Lee, Y.-L. Hong, and S. Gwo p. 161  abstract

Semiconductor Structures, Interfaces, and Surfaces

Electrical Properties of Hybrid (Ferromagnetic Metal)–(Layered Semiconductor)
Ni/p-GaSe Structures

A. P. Bakhtinov, V. N. Vodopyanov, Z. D. Kovalyuk, V. V. Netyaga, and O. S. Lytvyn p. 171  abstract

Low-Dimensional Systems

The Substructure and Luminescence
of Low-Temperature AlGaAs/GaAs(100) Heterostructures

P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev,
D. A. Vinokurov, I. S. Tarasov, and I. A. Zhurbina p. 184  abstract

The Role of Interface Phonons in the Formation of Polaron States in Quantum Wells

A. Yu. Maslov and O. V. Proshina p. 189  abstract

Spin Injection in GaAs/GaSb Quantum-Well Heterostructures

Ya. V. Terent’ev, A. A. Toropov, B. Ya. Meltser, A. N. Semenov, V. A. Solov’ev,
I. V. Sedova, A. A. Usikova, and S. V. Ivanov p. 194  abstract

Impact of Resonance-State Scattering on the Kinetics of Two-Dimensional Electrons

M. S. Keepa, P. S. Alekseev, and I. N. Yassievich p.198  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Visible Photoluminescence of Selectively Etched Porous nc-Si–SiO_x Structures

I. Z. Indutnyi, E. V. Michailovska, P. E. Shepeliavyi, and V. A. Dan’ko p. 206  abstract

The Mechanism of Metal Conductivity over the Interface between Organic Insulators

V. R. Nikitenko, A. R. Tameev, and A. V. Vannikov p. 211  abstract

Physics of Semiconductor Devices

Calculation and Analysis of Distributions of Current Density
and Temperature Over the Area of the InGaN/GaN Structure
of High-Power Light-Emitting Diodes

V. A. Sergeev and A. M. Hodakov p. 218  abstract

InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic
with Low Supply Voltage

Jung-Hui Tsai, Wen-Shiung Lour, Tzu-Yen Weng, and Chien-Ming Li p. 223  abstract

Highly Efficient Photovoltaic Cells Based
on In_0.53Ga_0.47As Alloys with Isovalent Doping

L. B. Karlina, A. S. Vlasov, M. M. Kulagina, E. P. Rakova,
N. Kh. Timoshina, and V. M. Andreev p. 228  abstract

Effect of the Active Region Thickness on Characteristics
of Semiconductor Lasers Based on Asymmetric AlGaAs/GaAs/InGaAs
Heterostructures with Broadened Waveguide

D. A. Vinokurov, V. V. Vasilyeva, V. A. Kapitonov, A. V. Lyutetskiy,
D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko, A. L. Stankevich,
V. V. Shamakhov, N. V. Fetisova, and I. S. Tarasov p. 233  abstract

A Study of Epitaxially Stacked Tunnel-Junction Semiconductor
Lasers Grown by MOCVD

D. A. Vinokurov, V. P. Konyaev, M. A. Ladugin, A. V. Lyutetskiy, A. A. Marmalyuk,
A. A. Padalitsa, A. N. Petrunov, N. A. Pikhtin, V. A. Simakov, S. O. Slipchenko,
A. V. Sukharev, N. V. Fetisova, V. V. Shamakhov, and I. S. Tarasov p. 238  abstract

Dissipation Loss of Mid-Infrared Radiation in a Dielectric Waveguide

N. S. Averkiev, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov p. 243  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Epitaxial Growth and Properties of Mg_xZn_1–xO Films Produced
by Pulsed Laser Deposition

A. A. Lotin, O. A. Novodvorsky, E. V. Khaydukov, V. N. Glebov, V. V. Rocheva, O. D. Khramova,
V. Ya. Panchenko, C. Wenzel, N. Trumpaicka, and K. D. Chtcherbachev p. 246  abstract

Microstructure and Strain of ZnO Molecular-Beam Epitaxial Layers on Sapphire

V. V. Ratnikov, R. N. Kyutt, S. V. Ivanov, M. P. Scheglov, and A. Baar p. 251  abstract

Thermophotovoltaic Generators Based on Gallium Antimonide

V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova,
A. V. Malievskaya, A. S. Vlasov, M. Z. Shvarts, N. Kh. Timoshina, and V. M. Andreev p. 255  abstract

High-Power InAs/InAsSbP Heterostructure LEDs
for Methane Spectroscopy ( 3.3 m)

A. P. Astakhova, A. S. Golovin, N. D. Il’inskaya, K. V. Kalinina, S. S. Kizhayev,
O. Yu. Serebrennikova, N. D. Stoyanov, Zs. J. Horvath, and Yu. P. Yakovlev p. 263  abstract

In Memoriam

In the Memory of Boris Andreevich Volkov p.269

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