Contents
Semiconductors

Vol. 42, No. 1, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Review

Potentialities and Basic Principles of Controlling the Plastic Relaxation of GeSi/Si
and Ge/Si Films with Stepwise Variation in the Composition

Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, O. P. Pchelyakov, and L. V. Sokolov p. 1  abstract

Electronic and Optical Properties of Semiconductors

The Linear Stage of Evolution of Electron–Hole Avalanches in Semiconductors

A. S. Kyuregyan p. 21  abstract

Optical Spectroscopy of Free Excitons in a CuInS₂ Chalcopyrite Semiconductor Compound

A. V. Mudryi, A. V. Ivanyukovich, M. V. Yakushev, R. Martin, and A. Saad p. 29  abstract

Electrical Properties of Proton-Irradiated CdSnAs₂

V. N. Brudnyi and T. V. Vedernikova p. 34  abstract

Semiconductor Structures, Interfaces, and Surfaces

Dependence of the Band Bending at the AgBr–AgI Microcontact Interface
on the Shape and Size of the Heterogeneous System

A. V. Khaneft, A. S. Poplavnoi, B. A. Sechkarev, and L. V. Sotnikova p. 38  abstract

Sodium-Peak Splitting in Dynamic Current–Voltage Characteristics
of Convective Ion Currents in Metal–Oxide–Semiconductor Structures

S. G. Dmitriev and Yu. V. Markin p. 43  abstract

Deep Levels and Electron Transport in AlGaN/GaN Heterostructures

I. V. Antonova, V. I. Polyakov, A. I. Rukavishnikov, V. G. Mansurov, and K. S. Zhuravlev p. 52  abstract

Metal-to-Semiconductor Emission of Hot Electrons Excited on Catalytic Reaction

V. F. Kharlamov, A. V. Kostin, M. V. Kubyshkina, and F. V. Kharlamov p. 59  abstract

Low-Dimensional Systems

Radiative Recombination Channels in Si/Si_1–xGe_x Nanostructures

Yu. A. Berashevich, A. S. Panfilenok, and V. E. Borisenko p. 67  abstract

In Situ Study of the Formation Kinetics of InSb Quantum Dots Grown in an InAs(Sb) Matrix

A. N. Semenov, O. G. Lyublinskaya, V. A. Solov’ev, B. Ya. Mel’tser, and S. V. Ivanov p. 74  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Limiting Values of the Quality Factor of Thermoelectric Composites

A. A. Snarskii, M. I. Zhenirovskii, and I. V. Bezsudnov p. 80  abstract

Physics of Semiconductor Devices

High-Temperature Nuclear-Detector Arrays Based
on 4H-SiC Ion-Implantation-Doped p⁺–n Junctions

E. V. Kalinina, N. B. Strokan, A. M. Ivanov, A. A. Sitnikova, A. V. Sadokhin,
A. Yu. Azarov, V. G. Kossov, and R. R. Yafaev p. 86  abstract

Reconstruction of the Potential Profile in an Insulating Layer
Using Current–Voltage Characteristics of Tunneling MIS Diodes

E. I. Goldman, A. G. Zhdan, N. F. Kukharskaya, and M. V. Chernyaev p. 92  abstract

The Sandwich InGaAs/GaAs Quantum Dot Structure for IR Photoelectric Detectors

L. D. Moldavskaya, N. V. Vostokov, D. M. Gaponova, V. M. Danil’tsev,
M. N. Drozdov, Yu. N. Drozdov, and V. I. Shashkin p. 99  abstract

Contribution of Auger Recombination to Saturation of the Light–Current Characteristics
in High-Power Laser Diodes ( = 1.0–1.9 m)

A. V. Lyutetski, K. S. Borshchev, N. A. Pikhtin, S. O. Slipchenko,
Z. N. Sokolova, and I. S. Tarasov p. 104  abstract

Injection-Based Photodetectors

I. M. Vikulin, Sh. D. Kurmashev, and V. I. Stafeev p. 112  abstract

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