Contents
Semiconductors

Vol. 41, No. 1, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Temperature Dependence of the Coefficient of Linear Thermal Expansion of Single-Crystal SmS

V. V. Kaminski, S. M. Luguev, Z. M. Omarov, N. V. Sharenkova, A. V. Golubkov,
L. N. Vasil’ev, and S. M. Solov’ev p. 1  abstract

Accumulation of Structural Defects in Silicon Irradiated with P Cluster Ions with Medium Energies

A. Yu. Azarov and A. I. Titov p. 5  abstract

Electronic and Optical Properties of Semiconductors

Electrical Properties of ZnSiAs₂ Irradiated with Protons

V. N. Brudnyand T. V. Vedernikova p. 11  abstract

Frenkel Thermal–Field Effect in MnGaInS₄ Layered Single Crystals

N. N. Niftiev and O. B. Tagiev p. 15  abstract

Contraction of the Conducting Region in an Intrinsic Semiconductor due to Joule Self-Heating

F. N. Rybakov, A. V. Melkikh, and A. A. Povzner p. 18  abstract

Electrical Properties and Structure of Chalcogenide Glasses Containing Bivalent Tin

G. A. Bordovski, R. A. Castro, P. P. Seregin, and E. I. Terukov p. 22  abstract

Optical Properties of CuIn₅Se₈ Single Crystals

I. V. Bodnar’ p. 26  abstract

Quasi-static Capacitance of a Weakly Compensated Semiconductor
with Hopping Conduction (on the Example of p-Si:B)

N. A. Poklonski, S. A. Vyrko, and A. G. Zabrodskii p. 30  abstract

Semiconductor Structures, Interfaces, and Surfaces

Capacitance–Voltage Characteristics of the p-Cd_0.27Hg_0.73Te-Based Structures
with a Wide-Gap Graded-Gap Surface Layer

V. V. Vasil’ev and Yu. P. Mashukov p. 37  abstract

Photoelectric Phenomena in the Cu (Al, In)/p-CuIn₃Se₅ Schottky Barriers

I. V. Bodnar’, V. Yu. Rud’, and Yu. V. Rud’ p. 43  abstract

Schottky Barriers Based on n-In₂S₃ Films Obtained by Laser-induced Evaporation

I. V. Bodnar’, V. A. Polubok, V. F. Gremenok, V. Yu. Rud’, and Yu. V. Rud’ p. 47  abstract

Photoelectric Properties of In/In₂Se₃ Structures

G. A. Il’chuk, V. V. Kus’nézh, R. Yu. Petrus’, V. Yu. Rud’, Yu. V. Rud’, and V. O. Ukrainets p. 52  abstract

Specific Features of Molecules’ Pyrolysis on the Epitaxial Surface in the Case
of Growth of the Si_1–xGe_x Layers from Hydrides in Vacuum

L. K. Orlov and S. V. Ivin p. 55  abstract

Low-Dimensional Systems

Efficient Second-Harmonic Generation in a Double-Quantum-Well Structure

A. Zh. Khachatrian, D. M. Sedrakian, V. D. Badalyan, and V. A. Khoetsyan p. 66  abstract

Lateral Ordering of Quantum Dots and Wires
in the (In,Ga)As/GaAs(100) Multilayer Structures

V. V. Strel’chuk, P. M. Lytvyn, A. F. Kolomys, M. Ya. Valakh, Yu. I. Mazur,
Zh. M. Wang, and G. J. Salamo p. 73  abstract

Atomic Defects of the Walls and the Electronic Structure of Molybdenum Disulfide Nanotubes

A. N. Enyashin and A. L. Ivanovski p. 81  abstract

Quantum Efficiency and Formation of the Emission Line
in Light-Emitting Diodes Based on InGaN/GaN Quantum Well Structures

N. I. Bochkareva, D. V. Tarkhin, Yu. T. Rebane, R. I. Gorbunov, Yu. S. Lelikov,
I. A. Martynov, and Yu. G. Shreter p. 87  abstract

Physics of Semiconductor Devices

Potential of Using the Cd_0.8Hg_0.2Te Alloy in Solar Cells

L. A. Kosyachenko, V. V. Kulchinsky, S. Yu. Paranchych, and V. M. Sklyarchuk p. 94  abstract

Silicon-on-Insulator Nanotransistors with Two Independent Gates

O. V. Naumova, M. A. Il’nitski, L. N. Safronov, and V. P. Popov p. 103  abstract

A Method for Calculating the Transient Time of a Multi-Stage Thermoelectric Cooler

Yu. I. Ravich and A. N. Gordienko p. 110  abstract

Instability of Characteristics of SiC Detectors Subjected to Extreme Fluence of Nuclear Particles

A. M. Ivanov, N. B. Strokan, E. V. Bogdanova, and A. A. Lebedev p. 115  abstract

Rules for the Authors p. 120

Information for the Authors p. 123

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