Contents
Semiconductors


Vol. 39, No. 1, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.


Preface

Atomic Structure and Nonelectronic Properties of Semiconductors

Effect of the Parameters of Sapphire Substrates on the Crystalline Quality of GaN Layers

Yu. N. Drozdov, N. V. Vostokov, D. M. Gaponova, V. M. Danil’tsev, M. N. Drozdov,
O. I. Khrykin, A. S. Filimonov, and V. I. Shashkin
p. 1  abstract


Electronic and Optical Properties of Semiconductors

Properties of the GaSb:Mn Layers Deposited from Laser Plasma

Yu. A. Danilov, E. S. Demidov, Yu. N. Drozdov, V. P. Lesnikov, and V. V. Podol’skiframe0 p. 4  abstract

Effect of the Conditions of Metal–Organic Chemical-Vapor Epitaxy on the Properties
of GaInAsN Epitaxial Films

V. M. Danil’tsev, D. M. Gaponova, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel’,
D. A. Pryakhin, O. I. Khrykin, and V. I. Shashkin
p. 8  abstract


Semiconductor Structures, Interfaces, and Surfaces

Growth of BGaAs Layers on GaAs Substrates by Metal–Organic Vapor-Phase Epitaxy

D. A. Pryakhin, V. M. Danil’tsev, Yu. N. Drozdov, M. N. Drozdov, D. M. Gaponova,
A. V. Murel’, V. I. Shashkin, and S. Rushworth
p. 11  abstract

Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor

O. I. Khrykin, A. V. Butin, D. M. Gaponova, V. M. Danil’tsev, M. N. Drozdov,
Yu. N. Drozdov, A. V. Murel, and V. I. Shashkin
p. 14  abstract


Low-Dimensional Systems

Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined
Semiconductor Heterostructures

N. V. Baframe1dus’, P. B. Demina, M. V. Dorokhin, B. N. Zvonkov, E. I. Malysheva, and E. A. Uskova p. 17  abstract

Spectra of Persistent Photoconductivity in InAs/AlSb Quantum-Well Heterostructures

V. Ya. Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Marem’yanin,
S. V. Morozov, Yu. G. Sadofyev, S. R. Johnson, and Y.-H. Zhang
p. 22  abstract

Long-Time Photoluminescence Kinetics of InAs/AlAs Quantum Dots in a Magnetic Field

T. S. Shamirzaev, A. M. Gilinskiframe2, A. K. Bakarov, A. I. Toropov, S. A. Figurenko, and K. S. Zhuravlev p. 27  abstract

Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells

A. V. Murel’, V. M. Danil’tsev, Yu. N. Drozdov, D. M. Gaponova, V. I. Shashkin,
V. B. Shmagin, and O. I. Khrykin
p. 30  abstract

A Study of Recombination Centers Related to As–Sb Nanoclusters
in Low-Temperature Grown Gallium Arsenide

P. N. Brunkov, A. A. Gutkin, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov,
V. V. Preobrazhenskiframe3, M. A. Putyato, and B. R. Semyagin
p. 33  abstract

Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer
on the Energy Spectrum of InAs/GaAs Quantum Dots

I. A. Karpovich, A. V. Zdoroveishchev, S. V. Tikhov, P. B. Demina, and O. E. Khapugin p. 37  abstract

Intersubband Absorption of Light in Heterostructures
with Double Tunnel-Coupled GaAs/AlGaAs Quantum Wells

L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, V. V. Kapaev,
S. Hanna, S. Schmidt, E. A. Zibik, and A. Seilmeier
p. 41  abstract

Current Oscillations under Lateral Transport in GaAs/InGaAs Quantum Well Heterostructures

A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, B. N. Zvonkov, and E. A. Uskova p. 44  abstract

Optical Phenomena in InAs/GaAs Heterostructures with Doped Quantum Dots and Artificial Molecules

L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, A. A. Andreev,
Yu. B. Samsonenko, A. A. Tonkikh, G. E. Cirlin, N. V. Kryzhanovskaya, V. M. Ustinov,
S. Hanna, A. Seilmeier, N. D. Zakharov, and P. Werner
p. 50  abstract

Calculation of the States of Shallow Donors in Quantum Wells
in a Magnetic Field Using Plane Wave Expansion

V. Ya. Aleshkin and L. V. Gavrilenko p. 54  abstract

The Effect of the Localization in a Quantum Well on the Lifetime of the States
of Shallow Impurity Centers

E. E. Orlova, P. Harrison, W.-M. Zhang, and M. P. Halsall p. 58  abstract

Cyclotron Resonance in Doped and Undoped InAs/AlSb Heterostructures with Quantum Wells

V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu. G. Sadofyev, J. P. Bird,
S. R. Johnson, and Y.-H. Zhang
p. 62  abstract

Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells
under the Optical Excitation of Donors

N. A. Bekin, R. Kh. Zhukavin, K. A. Kovalevskiframe4, S. G. Pavlov, B. N. Zvonkov,
E. A. Uskova, and V. N. Shastin
p. 67  abstract

Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic

A. V. Andrianov, S. V. Novikov, I. S. Zhuravlev, T. Li, R. Xia, S. Bull, I. Harrison,
E. C. Larkins, and C. T. Foxon
p. 73  abstract

Properties of Structures Based on Laser-Plasma Mn-Doped GaAs and Grown
by MOC-Hydride Epitaxy

Yu. V. Vasil’eva, Yu. A. Danilov, Ant. A. Ershov, B. N. Zvonkov, E. A. Uskova,
A. B. Davydov, B. A. Aronzon, S. V. Gudenko, V. V. Ryl’kov, A. B. Granovsky,
E. A. Gan’shina, N. S. Perov, and A. N. Vinogradov
p. 77  abstract

A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix

N. V. Vostokov, S. A. Gusev, V. M. Danil’tsev, M. N. Drozdov, Yu. N. Drozdov,
A. I. Korytin, A. V. Murel, and V. I. Shashkin
p. 82  abstract

InGaAs/GaAs Quantum Dot Heterostructures for 3–5 m IR Detectors

A. V. Antonov, D. M. Gaponova, V. M. Danil’tsev, M. N. Drozdov, L. D. Moldavskaya,
A. V. Murel’, V. S. Tulovchikov, and V. I. Shashkin
p. 86  abstract

Study of the Photoelectric Properties of Ge Quantum Dots in a ZnSe Matrix on GaAs

I. G. Neizvestny, S. P. Suprun, and V. N. Shumsky p. 89  abstract

Unusual Persistent Photoconductivity in the InAs/AlSb Quantum Well

Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, and Y.-H. Zhang p. 95  abstract

Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used
as Dislocation Filters

I. P. Soshnikov, N. N. Ledentsov, A. F. Tsatsul’nikov, A. V. Sakharov, W. V. Lundin,
E. A. Zavarin, A. V. Fomin, D. Litvinov, E. Hahn, and D. Gerthsen
p. 100  abstract

Lateral Photoconductivity of AlGaAs/InGaAs Structures with Quantum Wells
and Self-Organized Quantum Dots Under Interband Illumination

O. A. Shegai, A. K. Bakarov, A. K. Kalagin, and A. I. Toropov p. 103  abstract

Spin Effects in Magnetoresistance Induced in an n-InxGa1–xAs/GaAs Double Quantum Well
by a Parallel Magnetic Field

M. V. Yakunin, G. A. Al’shanskiframe5, Yu. G. Arapov, V. N. Neverov, G. I. Kharus,
N. G. Shelushinina, B. N. Zvonkov, E. A. Uskova, A. de Visser, and L. Ponomarenko
p. 107  abstract

Terahertz Oscillator Based on Nonlinear Frequency Conversion in a Double Vertical Cavity

Yu. A. Morozov, I. S. Nefedov, V. Ya. Aleshkin, and I. V. Krasnikova p. 113  abstract

Localization of Holes in an InAs/GaAs Quantum-Dot Molecule

M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov,
A. A. Tonkikh, and Yu. G. Musikhin
p. 119  abstract


Amorphous, Vitreous, and Porous Semiconductors

The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix

Yu. B. Samsonenko, G. E. Cirlin, A. A. Tonkikh, N. K. Polyakov, N. V. Kryzhanovskaya,
V. M. Ustinov, L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin, N. D. Zakharov, P. Werner, and A. Andreev
p. 124  abstract

Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer
Nanostructures with Quantum Dots

M. Ya. Valakh, V. V. Strelchuk, A. F. Kolomys, Yu. I. Mazur, Z. M. Wang, M. Xiao, and G. J. Salamo p. 127  abstract

Photoluminescence and the Raman Scattering in Porous GaSb Produced by Ion Implantation

Yu. A. Danilov, A. A. Biryukov, J. L. Gonçalves, J. W. Swart, F. Iikawa, and O. Teschke p. 132  abstract

Efficiency of Avalanche Light-Emitting Diodes Based on Porous Silicon

S. K. Lazarouk, A. A. Leshok, V. A. Labunov, and V. E. Borisenko p. 136  abstract


Physics of Semiconductor Devices

Observation of the Middle-Infrared Emission from Semiconductor Lasers Generating
Two Frequency Lines in the Near-Infrared Region of the Spectrum

V. Ya. Aleshkin, V. I. Gavrilenko, S. V. Morozov, K. V. Marem’yanin,
B. N. Zvonkov, and S. M. Nekorkin
p. 139  abstract

The Resonant Terahertz Response of a Slot Diode with a Two-Dimensional Electron Channel

V. V. Popov, G. M. Tsymbalov, M. S. Shur, and W. Knap p. 142  abstract

Bloch Oscillations in Superlattices: The Problem of a Terahertz Oscillator

Yu. A. Romanov and Yu. Yu. Romanova p. 147  abstract

The Mode Competition, Instability, and Second Harmonic Generation
in Dual-Frequency InGaAs/GaAs/InGaP Lasers

V. Ya. Aleshkin, B. N. Zvonkov, S. M. Nekorkin, and Vl. V. Kocharovsky p. 156  abstract


Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.