Contents
Semiconductors
Vol. 39, No. 1, 2005
Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Preface
Atomic Structure and Nonelectronic Properties of Semiconductors
Effect of the Parameters of Sapphire Substrates on the Crystalline Quality of GaN Layers
Yu. N. Drozdov, N. V. Vostokov, D. M. Gaponova, V. M. Danil’tsev, M. N. Drozdov,
O. I. Khrykin, A. S. Filimonov, and V. I. Shashkin p. 1 abstract
Electronic and Optical Properties of Semiconductors
Properties of the GaSb:Mn Layers Deposited from Laser Plasma
Yu. A. Danilov, E. S. Demidov, Yu. N. Drozdov, V. P. Lesnikov, and V. V. Podol’skip. 4 abstract
Effect of the Conditions of Metal–Organic Chemical-Vapor Epitaxy on the Properties
of GaInAsN Epitaxial Films
V. M. Danil’tsev, D. M. Gaponova, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel’,
D. A. Pryakhin, O. I. Khrykin, and V. I. Shashkin p. 8 abstract
Semiconductor Structures, Interfaces, and Surfaces
Growth of BGaAs Layers on GaAs Substrates by Metal–Organic Vapor-Phase Epitaxy
D. A. Pryakhin, V. M. Danil’tsev, Yu. N. Drozdov, M. N. Drozdov, D. M. Gaponova,
A. V. Murel’, V. I. Shashkin, and S. Rushworth p. 11 abstract
Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor
O. I. Khrykin, A. V. Butin, D. M. Gaponova, V. M. Danil’tsev, M. N. Drozdov,
Yu. N. Drozdov, A. V. Murel, and V. I. Shashkin p. 14 abstract
Low-Dimensional Systems
Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined
Semiconductor Heterostructures
N. V. Badus’, P. B. Demina, M. V. Dorokhin, B. N. Zvonkov, E. I. Malysheva, and E. A. Uskova p. 17 abstract
Spectra of Persistent Photoconductivity in InAs/AlSb Quantum-Well Heterostructures
V. Ya. Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Marem’yanin,
S. V. Morozov, Yu. G. Sadofyev, S. R. Johnson, and Y.-H. Zhang p. 22 abstract
Long-Time Photoluminescence Kinetics of InAs/AlAs Quantum Dots in a Magnetic Field
T. S. Shamirzaev, A. M. Gilinski, A. K. Bakarov, A. I. Toropov, S. A. Figurenko, and K. S. Zhuravlev p. 27 abstract
Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells
A. V. Murel’, V. M. Danil’tsev, Yu. N. Drozdov, D. M. Gaponova, V. I. Shashkin,
V. B. Shmagin, and O. I. Khrykin p. 30 abstract
A Study of Recombination Centers Related to As–Sb Nanoclusters
in Low-Temperature Grown Gallium Arsenide
P. N. Brunkov, A. A. Gutkin, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov,
V. V. Preobrazhenski, M. A. Putyato, and B. R. Semyagin p. 33 abstract
Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer
on the Energy Spectrum of InAs/GaAs Quantum Dots
I. A. Karpovich, A. V. Zdoroveishchev, S. V. Tikhov, P. B. Demina, and O. E. Khapugin p. 37 abstract
Intersubband Absorption of Light in Heterostructures
with Double Tunnel-Coupled GaAs/AlGaAs Quantum Wells
L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, V. V. Kapaev,
S. Hanna, S. Schmidt, E. A. Zibik, and A. Seilmeier p. 41 abstract
Current Oscillations under Lateral Transport in GaAs/InGaAs Quantum Well Heterostructures
A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, B. N. Zvonkov, and E. A. Uskova p. 44 abstract
Optical Phenomena in InAs/GaAs Heterostructures with Doped Quantum Dots and Artificial Molecules
L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, A. A. Andreev,
Yu. B. Samsonenko, A. A. Tonkikh, G. E. Cirlin, N. V. Kryzhanovskaya, V. M. Ustinov,
S. Hanna, A. Seilmeier, N. D. Zakharov, and P. Werner p. 50 abstract
Calculation of the States of Shallow Donors in Quantum Wells
in a Magnetic Field Using Plane Wave Expansion
V. Ya. Aleshkin and L. V. Gavrilenko p. 54 abstract
The Effect of the Localization in a Quantum Well on the Lifetime of the States
of Shallow Impurity Centers
E. E. Orlova, P. Harrison, W.-M. Zhang, and M. P. Halsall p. 58 abstract
Cyclotron Resonance in Doped and Undoped InAs/AlSb Heterostructures with Quantum Wells
V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu. G. Sadofyev, J. P. Bird,
S. R. Johnson, and Y.-H. Zhang p. 62 abstract
Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells
under the Optical Excitation of Donors
N. A. Bekin, R. Kh. Zhukavin, K. A. Kovalevski, S. G. Pavlov, B. N. Zvonkov,
E. A. Uskova, and V. N. Shastin p. 67 abstract
Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic
A. V. Andrianov, S. V. Novikov, I. S. Zhuravlev, T. Li, R. Xia, S. Bull, I. Harrison,
E. C. Larkins, and C. T. Foxon p. 73 abstract
Properties of Structures Based on Laser-Plasma Mn-Doped GaAs and Grown
by MOC-Hydride Epitaxy
Yu. V. Vasil’eva, Yu. A. Danilov, Ant. A. Ershov, B. N. Zvonkov, E. A. Uskova,
A. B. Davydov, B. A. Aronzon, S. V. Gudenko, V. V. Ryl’kov, A. B. Granovsky,
E. A. Gan’shina, N. S. Perov, and A. N. Vinogradov p. 77 abstract
A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix
N. V. Vostokov, S. A. Gusev, V. M. Danil’tsev, M. N. Drozdov, Yu. N. Drozdov,
A. I. Korytin, A. V. Murel, and V. I. Shashkin p. 82 abstract
InGaAs/GaAs Quantum Dot Heterostructures for 3–5 m IR Detectors
A. V. Antonov, D. M. Gaponova, V. M. Danil’tsev, M. N. Drozdov, L. D. Moldavskaya,
A. V. Murel’, V. S. Tulovchikov, and V. I. Shashkin p. 86 abstract
Study of the Photoelectric Properties of Ge Quantum Dots in a ZnSe Matrix on GaAs
I. G. Neizvestny, S. P. Suprun, and V. N. Shumsky p. 89 abstract
Unusual Persistent Photoconductivity in the InAs/AlSb Quantum Well
Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, and Y.-H. Zhang p. 95 abstract
Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used
as Dislocation Filters
I. P. Soshnikov, N. N. Ledentsov, A. F. Tsatsul’nikov, A. V. Sakharov, W. V. Lundin,
E. A. Zavarin, A. V. Fomin, D. Litvinov, E. Hahn, and D. Gerthsen p. 100 abstract
Lateral Photoconductivity of AlGaAs/InGaAs Structures with Quantum Wells
and Self-Organized Quantum Dots Under Interband Illumination
O. A. Shegai, A. K. Bakarov, A. K. Kalagin, and A. I. Toropov p. 103 abstract
Spin Effects in Magnetoresistance Induced in an n-InxGa1–xAs/GaAs Double Quantum Well
by a Parallel Magnetic Field
M. V. Yakunin, G. A. Al’shanski, Yu. G. Arapov, V. N. Neverov, G. I. Kharus,
N. G. Shelushinina, B. N. Zvonkov, E. A. Uskova, A. de Visser, and L. Ponomarenko p. 107 abstract
Terahertz Oscillator Based on Nonlinear Frequency Conversion in a Double Vertical Cavity
Yu. A. Morozov, I. S. Nefedov, V. Ya. Aleshkin, and I. V. Krasnikova p. 113 abstract
Localization of Holes in an InAs/GaAs Quantum-Dot Molecule
M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov,
A. A. Tonkikh, and Yu. G. Musikhin p. 119 abstract
Amorphous, Vitreous, and Porous Semiconductors
The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix
Yu. B. Samsonenko, G. E. Cirlin, A. A. Tonkikh, N. K. Polyakov, N. V. Kryzhanovskaya,
V. M. Ustinov, L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin, N. D. Zakharov, P. Werner, and A. Andreev p. 124 abstract
Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer
Nanostructures with Quantum Dots
M. Ya. Valakh, V. V. Strelchuk, A. F. Kolomys, Yu. I. Mazur, Z. M. Wang, M. Xiao, and G. J. Salamo p. 127 abstract
Photoluminescence and the Raman Scattering in Porous GaSb Produced by Ion Implantation
Yu. A. Danilov, A. A. Biryukov, J. L. Gonçalves, J. W. Swart, F. Iikawa, and O. Teschke p. 132 abstract
Efficiency of Avalanche Light-Emitting Diodes Based on Porous Silicon
S. K. Lazarouk, A. A. Leshok, V. A. Labunov, and V. E. Borisenko p. 136 abstract
Physics of Semiconductor Devices
Observation of the Middle-Infrared Emission from Semiconductor Lasers Generating
Two Frequency Lines in the Near-Infrared Region of the Spectrum
V. Ya. Aleshkin, V. I. Gavrilenko, S. V. Morozov, K. V. Marem’yanin,
B. N. Zvonkov, and S. M. Nekorkin p. 139 abstract
The Resonant Terahertz Response of a Slot Diode with a Two-Dimensional Electron Channel
V. V. Popov, G. M. Tsymbalov, M. S. Shur, and W. Knap p. 142 abstract
Bloch Oscillations in Superlattices: The Problem of a Terahertz Oscillator
Yu. A. Romanov and Yu. Yu. Romanova p. 147 abstract
The Mode Competition, Instability, and Second Harmonic Generation
in Dual-Frequency InGaAs/GaAs/InGaP Lasers
V. Ya. Aleshkin, B. N. Zvonkov, S. M. Nekorkin, and Vl. V. Kocharovsky p. 156 abstract
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