Contents
Semiconductors
Vol. 37, No. 1, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Multifrequency Kinks in Multifrequency External Fields
M. E. Polyakov p. 1 abstract
Electrical Activity of Dislocations and Point Defects of Deformation Origin
in CdxHg1xTe Crystals
S. G. Gasan-zade, S. V. Stary, M. V. Strikha, and G. A. Shepelski
p. 6 abstract
Determination of Deformation Potential Constants for n- and p-Si
from the Concentration Anharmonicity
A. A. Skvortsov, O. V. Litvinenko, and A. M. Orlov p. 15 abstract
Electronic and Optical Properties of Semiconductors
Influence of Electronic (Charge) State of E Traps on Their Introduction Rate in Irradiated n-GaAs
V. N. Brudnyi and V. V. Peshev p. 20 abstract
Semiconductor Structures, Interfaces, and Surfaces
Study of Photocapacitance in Diodes Fabricated from Silicon Doped with Vanadium
Kh. T. Igamberdiev, A. T. Mamadalimov, R. A. Muminov,
T. A. Usmanov, and Sh. A. Shoyusupov p. 28 abstract
Investigation of Magnetosensitivity of Transistor Structures
with Diffusive Transport of Injected Charge Carriers
M. A. Glauberman, V. V. Yegorov, V. V. Kozel, and N. A. Kanishcheva p. 31 abstract
Size Effect in Two-Photon Absorption of Recombination Radiation
in Graded-Gap AlxGa1xAs Solid Solutions
V. F. Kovalenko and S. V. Shutov p. 38 abstract
Mathematical Simulation of the Kinetics of High-Temperature Silicon Oxidation
and the Structure of the Boundary Layer in the SiSiO2 System
G. Ya. Krasnikov, N. A. Zaitsev, and I. V. Matyushkin p. 44 abstract
Effect of Thermal Annealing of Radiation Defects on the Noise Characteristics
of Silicon pn Structures with a Thin Multiplication Region
A. K. Baranouski, P. V. Kuchinski
, and E. D. Savenok p. 50 abstract
Photoelectric Properties Heterojunctions between Silicon
and Polyhomoconjugated Organometallic Compounds
N. V. Blinova, E. L. Krasnopeeva, Yu. A. Nikolaev, A. Yu. Osadchev,
V. Yu. Rud, Yu. V. Rud, E. I. Terukov, and V. V. Shamanin p. 53 abstract
Optical Transparency of Macroporous Silicon with Through Pores
E. V. Astrova, L. I. Korovin, I. G. Lang, A. D. Remenyuk, and V. B. Shuman p. 57 abstract
Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation
N. B. Strokan, A. M. Ivanov, M. E. Boko, N. S. Savkina,
A. M. Strelchuk, A. A. Lebedev, and R. Yakimova p. 65 abstract
Low-Dimensional Systems
Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices
at the Threshold of Quantum Dot Formation
V. A. Kulbachinskii, R. A. Lunin, V. A. Rogozin, V. G. Mokerov,
Yu. V. Fedorov, Yu. V. Khabarov, E. Narumi, K. Kindo, and A. de Visser p. 70 abstract
Investigation of Electronic Transitions in Coupled-Quantum-Well Structures
with a Built-in Electric Field by Photoreflectance Spectroscopy
G. B. Galiev, V. É. Kaminski, V. G. Mokerov, L. P. Avakyants,
P. Yu. Bokov, A. V. Chervyakov, and V. A. Kulbachinskip. 77 abstract
Amorphous, Vitreous, and Porous Semiconductors
Influence of Charged Defects on Detection of Electron Spin Resonance
in Vitreous Chalcogenide Semiconductors
L. P. Ginzburg p. 82 abstract
Electrical Properties of Si:H/p-Si Structures Fabricated by Hydrogen Implantation
O. V. Naumova, I. V. Antonova, V. P. Popov, and V. F. Stas p. 92 abstract
StructuralPhase Transformations in SiOx Films in the Course
of Vacuum Heat Treatment
I. P. Lisovskyy, I. Z. Indutnyy, B. N. Gnennyy, P. M. Lytvyn,
D. O. Mazunov, A. S. Oberemok, N. V. Sopinskyy,
and P. E. Shepelyavyi p. 97 abstract
The Influence of Hydrogen Plasma on the Electroreflection Spectrum
and the Spectrum of Electron States of Porous Silicon
E. F. Venger, R. Yu. Holiney, L. A. Matveeva, and A. V. Vasin p. 103 abstract
Optical Properties of Polydimethylphenyleneoxide Free-Standing Films Containing Fullerene
Yu. F. Biryulin, E. Yu. Melenevskaya, S. N. Mikov, S. E. Orlov,
V. D. Petrikov, D. A. Syckmanov, and V. N. Zgonnik p. 108 abstract
Physics of Semiconductor Devices
Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots
near the Lasing Threshold
N. Yu. Gordeev, S. V. Zatsev, L. Ya. Karachinsky, V. I. Kopchatov,
I. I. Novikov, V. M. Ustinov, and P. S. Kopev p. 112 abstract
Tunneling Recombination in Silicon Avalanche Diodes
S. V. Bulyarski, V. K. Ionychev, and V. V. Kuzmin p. 115 abstract
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