Contents
Semiconductors

Vol. 37, No. 1, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Multifrequency Kinks in Multifrequency External Fields

M. E. Polyakov p. 1  abstract

Electrical Activity of Dislocations and Point Defects of Deformation Origin
in Cd_xHg_1–xTe Crystals

S. G. Gasan-zade, S. V. Stary, M. V. Strikha, and G. A. Shepel’ski p. 6  abstract

Determination of Deformation Potential Constants for n- and p-Si
from the Concentration Anharmonicity

A. A. Skvortsov, O. V. Litvinenko, and A. M. Orlov p. 15  abstract

Electronic and Optical Properties of Semiconductors

Influence of Electronic (Charge) State of E Traps on Their Introduction Rate in Irradiated n-GaAs

V. N. Brudnyi and V. V. Peshev p. 20  abstract

Semiconductor Structures, Interfaces, and Surfaces

Study of Photocapacitance in Diodes Fabricated from Silicon Doped with Vanadium

Kh. T. Igamberdiev, A. T. Mamadalimov, R. A. Muminov,
T. A. Usmanov, and Sh. A. Shoyusupov p. 28  abstract

Investigation of Magnetosensitivity of Transistor Structures
with Diffusive Transport of Injected Charge Carriers

M. A. Glauberman, V. V. Yegorov, V. V. Kozel, and N. A. Kanishcheva p. 31  abstract

Size Effect in Two-Photon Absorption of Recombination Radiation
in Graded-Gap Al_xGa_1–xAs Solid Solutions

V. F. Kovalenko and S. V. Shutov p. 38  abstract

Mathematical Simulation of the Kinetics of High-Temperature Silicon Oxidation
and the Structure of the Boundary Layer in the Si–SiO₂ System

G. Ya. Krasnikov, N. A. Zaitsev, and I. V. Matyushkin p. 44  abstract

Effect of Thermal Annealing of Radiation Defects on the Noise Characteristics
of Silicon p–n Structures with a Thin Multiplication Region

A. K. Baranouski, P. V. Kuchinski, and E. D. Savenok p. 50  abstract

Photoelectric Properties Heterojunctions between Silicon
and Polyhomoconjugated Organometallic Compounds

N. V. Blinova, E. L. Krasnopeeva, Yu. A. Nikolaev, A. Yu. Osadchev,
V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, and V. V. Shamanin p. 53  abstract

Optical Transparency of Macroporous Silicon with Through Pores

E. V. Astrova, L. I. Korovin, I. G. Lang, A. D. Remenyuk, and V. B. Shuman p. 57  abstract

Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation

N. B. Strokan, A. M. Ivanov, M. E. Boko, N. S. Savkina,
A. M. Strel’chuk, A. A. Lebedev, and R. Yakimova p. 65  abstract

Low-Dimensional Systems

Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices
at the Threshold of Quantum Dot Formation

V. A. Kul’bachinskii, R. A. Lunin, V. A. Rogozin, V. G. Mokerov,
Yu. V. Fedorov, Yu. V. Khabarov, E. Narumi, K. Kindo, and A. de Visser p. 70  abstract

Investigation of Electronic Transitions in Coupled-Quantum-Well Structures
with a Built-in Electric Field by Photoreflectance Spectroscopy

G. B. Galiev, V. É. Kaminski, V. G. Mokerov, L. P. Avakyants,
P. Yu. Bokov, A. V. Chervyakov, and V. A. Kul’bachinski p. 77  abstract

Amorphous, Vitreous, and Porous Semiconductors

Influence of Charged Defects on Detection of Electron Spin Resonance
in Vitreous Chalcogenide Semiconductors

L. P. Ginzburg p. 82  abstract

Electrical Properties of Si:H/p-Si Structures Fabricated by Hydrogen Implantation

O. V. Naumova, I. V. Antonova, V. P. Popov, and V. F. Stas’ p. 92  abstract

Structural–Phase Transformations in SiO_x Films in the Course
of Vacuum Heat Treatment

I. P. Lisovskyy, I. Z. Indutnyy, B. N. Gnennyy, P. M. Lytvyn,
D. O. Mazunov, A. S. Oberemok, N. V. Sopinskyy,
and P. E. Shepelyavyi p. 97  abstract

The Influence of Hydrogen Plasma on the Electroreflection Spectrum
and the Spectrum of Electron States of Porous Silicon

E. F. Venger, R. Yu. Holiney, L. A. Matveeva, and A. V. Vasin p. 103  abstract

Optical Properties of Polydimethylphenyleneoxide Free-Standing Films Containing Fullerene

Yu. F. Biryulin, E. Yu. Melenevskaya, S. N. Mikov, S. E. Orlov,
V. D. Petrikov, D. A. Syckmanov, and V. N. Zgonnik p. 108  abstract

Physics of Semiconductor Devices

Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots
near the Lasing Threshold

N. Yu. Gordeev, S. V. Zatsev, L. Ya. Karachinsky, V. I. Kopchatov,
I. I. Novikov, V. M. Ustinov, and P. S. Kop’ev p. 112  abstract

Tunneling Recombination in Silicon Avalanche Diodes

S. V. Bulyarski, V. K. Ionychev, and V. V. Kuz’min p. 115  abstract

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