Contents
Semiconductors

Vol. 36, No. 1, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Review

Hopping Conduction via Strongly Localized Impurity States of Indium
in PbTe and Its Solid Solutions

Yu. I. Ravich and S. A. Nemov p. 1  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Influence of the Screening Effect on Passivation of p-Type Silicon by Hydrogen

O. V. Aleksandrov p. 21  abstract

Electronic and Optical Properties of Semiconductors

Special Features of Hopping Conduction in p-Hg_0.78Cd_0.22Te Crystals
under Conditions of Dual Doping

V. V. Bogoboyashchi p. 26  abstract

On Stabilization of the Fermi Level in Ga-Doped PbTe-Based Alloys

E. P. Skipetrov, E. A. Zvereva, L. A. Skipetrova, O. S. Volkova, and E. I. Slyn’ko p. 34  abstract

Effect of Boron Dopant on the Photoconductivity of Microcrystalline Hydrogenated Silicon Films

A. G. Kazanski, H. Mell, E. I. Terukov, and P. A. Forsh p. 38  abstract

Evaluation of Physical Parameters for the Group III Nitrates: BN, AlN, GaN, and InN

S. Yu. Davydov p. 41  abstract

Optical Absorption by Transitions between Subbands of Light
and Heavy Holes in p-Mn_xHg_1–xTe

I. M. Nesmelova, N. S. Baryshev, and V. A. Andreev p. 45  abstract

Semiconductor Structures, Interfaces, and Surfaces

A Combined Technique for Studying the Multicomponent Spectra
of Photoreflection from Semiconductors

R. V. Kuz’menko, A. V. Ganzha, and É. P. Domashevskaya p. 48  abstract

Sulfide Passivating Coatings on GaAs(100) Surface under Conditions
of MBE Growth of II–VI/GaAs

I. V. Sedova, T. V. L’vova, V. P. Ulin, S. V. Sorokin, A. V. Ankudinov,
V. L. Berkovits, S. V. Ivanov, and P. S. Kop’ev p. 54  abstract

Transformation of Interface States in Silicon-on-Insulator Structures
under Annealing in Hydrogen Atmosphere

I. V. Antonova, . Stano, D. V. Nikolaev, O. V. Naumova,
V. P. Popov, and V. A. Skuratov p. 60  abstract

Low-Dimensional Systems

Spontaneous Spin Polarization of Electrons in Quantum Wires

I. A. Shelykh, N. T. Bagraev, V. K. Ivanov, and L. E. Klyachkin p. 65  abstract

Light Emission by Semiconductor Structure with Quantum Well
and Array of Quantum Dots

V. P. Evtikhiev, O. V. Konstantinov, A. V. Matveentsev, and A. E. Romanov p. 74  abstract

Changes in the Density of Nonradiative Recombination Centers
in GaAs/AlGaAs Quantum-Well Structures as a Result
of Treatment in CF₄ Plasma

T. S. Shamirzaev, A. L. Sokolov, K. S. Zhuravlev, A. Yu. Kobitski,
H. P. Wagner, and D. R. T. Zahn p. 81  abstract

Charge Effects Controlling the Current Hysteresis and Negative Differential Resistance
in Periodic Nanodimensional Structures Si/CaF₂

Yu. A. Berashevich, A. L. Danilyuk, A. N. Kholod, and V. E. Borisenko p. 85  abstract

Spin Relaxation in Asymmetrical Heterostructures

N. S. Averkiev, L. E. Golub, and M. Willander^, p. 91  abstract

Amorphous, Vitreous, and Porous Semiconductors

A Mechanism of Oxygen-Induced Passivation of Porous Silicon
in the HF : HCl : C₂H₅OH Solutions

S. A. Gavrilov, A. I. Belogorokhov, and L. I. Belogorokhova p. 98  abstract

Formation of Silicon Nanocrystals with Preferred (100) Orientation
in Amorphous Si:H Films Grown on Glass Substrates and Exposed
to Nanosecond Pulses of Ultraviolet Radiation

M. D. Efremov, V. V. Bolotov, V. A. Volodin, S. A. Kochube, and A. V. Kretinin p. 102  abstract

Density of States in Amorphous Carbon and Its Modification by Annealing

V. I. Ivanov-Omski, A. Tagliaferro, G. Fanchini, and S. G. Yastrebov p. 110  abstract

Physics of Semiconductor Devices

A Graded-Gap Detector of Ionizing Radiation

J. Poela, K. Poela, A. ilnas, V. Jasutis, L. Dapkus,
A. Kinduris, and V. Jucien p. 116  abstract

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