Contents

Semiconductors

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Vol. 60, No. 1, 2026

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First-principles Analysis of the Physical Properties of Manganese-doped Halide Perovskites CsCdCl₃

Hamida Bouhani Benziane, Noureddine Guettab, Ahmed Azzouz-Rached, Mohammed Traiche, Kowther Dendane, Naouel Chelil, Mohammed Sahnoun, Nasir Rahman, and Mudasser Husain p. 1  abstract

Comprehensive Analytical Modeling and Assessment of Device Physics and Electrostatic Control Mechanisms in Si/SiO₂ Junctionless Surrounding-Gate Transistors

Soumya Sen, Sahil Hamid, and Ashish Raman p. 18  abstract

Comprehensive Study of Normally-off ScAlN Barrier GaN Transistors on Ultra-wide Bandgap β-Ga₂O₃: DC and RF Perspectives

K. Nirmala Devi, P. Murugapandiyan, A. Lakshmi Narayana, and C. Sivamani p. 26  abstract

Optimized DC and RF Characteristics of ScAlN/InGaN/GaN HEMTs on Silicon Carbide using Step-graded AlGaN Buffer Layers

S. Saju, K. Swaminathan, Ramkumar Natarajan, and A. Lakshmi Narayana p. 42  abstract

Structural, Optical and Thermoelectric Characterization of BaTiO₃ for Solar, Sensor and Photonic Applications

M. A. Ghebouli, K. Bouferrache, S. Alomairy, N. Bioud, M. Fatmi, B. Ghebouli, Talal M. Althagafi, and Mustafa Jaipallah Abdelmageed Abualreish p. 61  abstract

Empirical Pseudopotential Method to Investigate Effective Mass and Dielectric Properties of CdS_xTe_1–x Alloy

K. Sassoui and F. Mezrag p. 79  abstract

Design and Performance Assessment of ZnO Schottky TFT-based Room Temperature Hydrogen Gas Sensor

Sukanya Ghosh, Arijit Bardhan Roy, Debarati Nath, and Sayantani Bhattacharya p. 88  abstract

Performance Comparison of GaN-based HEMTs on β-Ga₂O₃ Substrates Using Compositionally-Graded InGaN and AlGaN Back Barriers for High Frequency Applications

K. Ferents Koni Jiavana, J. K. Kasthuri Bha, P. Murugapandiyan, and Ramkumar Natarajan p. 100  abstract

Effect of High-κ Dielectric Gate Stacks and Thickness on Electrical Performance of n-MOSFET Devices

Mengfan Zhang, Danghui Wang, Tianhan Xu, and Chaoyu Feng p. 114  abstract

Impact of B-site Cation Transmutation in Halide Perovskites CsXBr₃ (X = Pb, Sn)

Deepak Choudhary, Shahjadi Khatoon, Sandeep Sirohi, Jagriti Tyagi, Updesh Verma, Manendra, and Prashant Yadav p. 124  abstract

Performance Comparison of AlGaN/GaN HEMTs with Al_0.05Ga_0.95N and β-Ga₂O₃ Back Barriers on SiC Substrate for RF Applications

Bathlin Nelmin Nelson and R. S. Shaji p. 134  abstract

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