Vol. 57, No. 1, 2023

Semiconductors

Basic Research

Identification of the Structure of Nanoscale Layers of Multilayer Heterocomposites using Transmission Electron Microscopy

R. L. Volkov and N. I. Borgardt p. 1 abstract

Electronics Materials

Characteristics and Areas of Possible Application of Amorphous Silicon–Carbon and Metal–Silicon–Carbon Films. Review

V. K. Dmitriev, E. A. Il’ichev, G. G. Kirpilenko, G. N. Petrukhin, G. S. Rychkov and V. D. Frolov p. 11 abstract

Thermal Stability of Thick Films Based on Low-Temperature Thermoelectric Materials of Bi-Te-Se and Bi-Te-Sb Systems Modified with Copper-Oxide Additives

A. V. Babich, I. A. Voloshchuk, A. A. Sherchenkov, S. Yu. Pereverzeva, D. D. Glebova and T. A. Babich p. 28 abstract

Methods for Calculating the Effective Electrophysical Properties of Inhomogeneous Media Taking into Account Various Structural Features. Review

I. V. Lavrov p. 31 abstract

Electrical Transport in Porous Structures of Si-Ge/c-Si Formed by the Electrochemical Deposition of Germanium in Porous Silicon

D. L. Goroshko, I. M. Gavrilin, A. A. Dronov, O. A. Goroshko, L. S. Volkova, N. L. Grevtsov, E. B. Chubenko and V. P. Bondarenko p. 46 abstract

Technological Processes and Routes

Investigation of the Dependence of the Silicon Needle Shape on the KOH Solution Concentration during Anisotropic Wet Etching

A. V. Novak, A. M. Sokolov, A. V. Rumyantsev and V. R. Novak p. 52 abstract

Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate

O. V. Podorozhniy, A. V. Rumyantsev, R. L. Volkov and N. I. Borgardt p. 58 abstract

Elements of Integrated Electronics

Vacuum Nanoelectronics Based on Semiconductor Field-Emission Structures: Current State and Development Prospects. Review

N. A. Dyuzhev and I. D. Evsikov p. 65 abstract

Micro- and Nanosystem Technology

Methods of Determining the Concentration and Mobility in Layers of Space-Charge Regions

V. P. Karamyshev p. 81 abstract

Integrated Radioelectronic Devices

Investigation of the Flat Viewing Angle of Silicon Photomultipliers

I. R. Gulakov, A. O. Zenevich and O. V. Kochergina p. 87 abstract