Contents

Semiconductors


Vol. 55, No. 1, 2021


Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Local Structure and Anti-Structural Defects of Tin in Amorphous and Crystalline Ge2Sb2Te5 Films

A. V. Marchenko, E. I. Terukov, F. S. Nasredinov, Yu. A. Petrushin and P. P. Seregin p. 1  abstract


Electronic Properties of Semiconductors

Arsenic Doping Upon the Deposition of CdTe Layers from Dimethylcadmium and Diisopropyltellurium

V. S. Evstigneev, A. V. Chilyasov, A. N. Moiseev, S. V. Morozov and D. I. Kuritsyn p. 7  abstract


Surfaces, Interfaces, and Thin Films

Room-Temperature Observation of Local and Nonlocal Electronic Quantum States on the Surface of Silicon

N. A. Torkhov p. 14  abstract

Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages

D. A. Belorusov, E. I. Goldman, V. G. Naryshkina and G. V. Chucheva p. 21  abstract

Thin-Film Baroresistors Based on Sm1 – xGdxS Solid Solutions

V. V. Kaminsky, S. M. Soloviev, N. N. Stepanov, G. A. Kamenskaja, G. D. Khavrov and S. E. Alexandrov p. 25  abstract

Effect of Annealing on the Surface Morphology and Current–Voltage Characterization of a CZO Structure Prepared by RF Magnetron Sputtering

B. Kınacı, E. Çelik, E. Çokduygulular, Ç. Çetinkaya, Y. Yalçın, H. İ. Efkere, Y. Özen, N. A. Sönmez and S. Özçelik p. 28  abstract

Spray Pyrolysis Synthesized and ZnO–NiO Nanostructured Thin Films Analysis with Their Nanocomposites for Waveguiding Applications

B. Gharbi, A. Taabouche, M. Brella, R. Gheriani, Y. Bouachiba, A. Bouabellou, F. Hanini, S. Barouk, H. Serrar and B. Rahal p. 37  abstract


Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Spectroscopic Studies of Integrated GaAs/Si Heterostructures

P. V. Seredin, D. L. Goloshchapov, I. N. Arsentyev, D. N. Nikolaev, N. A. Pikhtin and S. O. Slipchenko p. 44  abstract

Frequency Dependent Capacitance and Conductance–Voltage Characteristics of Nitride GaAs Schottky Diode

A. Ziane, M. Amrani, A. Rabehi, A. Douara, M. Mostefaoui, A. Necaibia, N. Sahouane, R. Dabou and A. Bouraiou p. 51  abstract

Simulation of Carrier Trapping in an Embedded Nanowire and Its Effect in the Nano-EBIC Technique

A. El Hdiy and M. Ledra p. 56  abstract


Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Quantum-Confinement Effect in Silicon Nanocrystals during Their Dissolution in Model Biological Fluids

M. B. Gongalsky, U. A. Tsurikova, K. A. Gonchar, G. Z. Gvindgiliiia and L. A. Osminkina p. 61  abstract

Study of Undoped Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition

A. L. Vikharev, S. A. Bogdanov, N. M. Ovechkin, O. A. Ivanov, D. B. Radishev, A. M. Gorbachev, M. A. Lobaev, A. Ya. Vul, A. T. Dideikin, S. A. Kraev and S. A. Korolev p. 66  abstract

Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices

I. E. Tyschenko and R. Zhang p. 76  abstract


Physics of Semiconductor Devices

Effect of Electron–Phonon Interaction and γ-Ray Irradiation on the Reverse Currents of Silicon Photodiodes

S. V. Bulyarskiy, A. V. Lakalin and M. A. Saurov p. 86  abstract

High-Power Schottky Diodes with a Negative-Differential-Resistance Portion in the IV Characteristic

A. G. Tandoev, T. T. Mnatsakanov and S. N. Yurkov p. 92  abstract

Silicon Nanowire Parameter Extraction Using DFT and Comparative Performance Analysis of SiNWFET and CNTFET Devices

B. Singh, B. Prasad and D. Kumar p. 100  abstract

Effect of Total Ionizing Dose Damage on 8-Transistor CMOS Star Sensor Performance

J. Feng, Y.-D. Li, J. Fu, L. Wen, C.-F. He and Q. Guo p. 108  abstract

Device Performance Optimization of Organic Thin-Film Transistors at Short-Channel Lengths Using Vertical Channel Engineering Techniques

F. Ana and N. Din p. 116  abstract


Fabrication, Treatment, and Testing of Materials and Structures

Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon

P. V. Seredin, D. L. Goloshchapov, Yu. Yu. Khudyakov, I. N. Arsentyev, D. N. Nikolaev, N. A. Pikhtin, S. O. Slipchenko and Harald Leiste p. 122  abstract