Vol. 54, No. 1, 2020

Semiconductors

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Effect of Oxygen and Fluorine Absorption on the Electronic Structure of the InSb(111) Surface

A. A. Fuks, A. V. Bakulin, S. E. Kulkova, N. A. Valisheva and A. V. Postnikov p. 1 abstract

Electronic Properties of Semiconductors

Revisiting the Nature of the Anomalous Temperature Dependence of the Hall Coefficient Observed for Semiconductor Crystals of Bi₂Te₃–Sb₂Te₃ Solid Solutions

N. P. Stepanov p. 11 abstract

Parameters of ZnO Semiconductor Films Doped with Mn and Fe 3d Impurities

M. M. Mezdrogina, A. Ya. Vinogradov and Yu. V. Kozhanova p. 15 abstract

Photodielectric Effect in Bi₁₂SiO₂₀ Sillenite Crystals

V. T. Avanesyan and I. V. Piskovatskova p. 19 abstract

Anticorrelation between the Intensity of Stimulated Picosecond Emission in GaAs and the Characteristic Time of Charge-Carrier Cooling

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev and A. N. Krivonosov p. 22 abstract

On the Growth and Properties of FeIn₂S_3.6Se_0.4 Single Crystals

I. V. Bodnar p. 28 abstract

High-Frequency Conductivity of Disordered Semiconductors in the Region of the Transition from the Linear to Quadratic Frequency Dependence

M. A. Ormont and I. P. Zvyagin p. 33 abstract

Band Gap Opening of Doped Graphene Stone Wales Defects: Simulation Study

Jamal A. Talla p. 40 abstract

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies

V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan and D. S. Poloskin p. 46 abstract

Study of Electrical Conductivity of La₂S₃

V. V. Kaminskii, M. M. Kazanin, M. A. Grevtsev, N. V. Sharenkova, S. Hirai, S. Jin and A. D. Polushina p. 55 abstract

First Principles Study on Electronic Structure and Optical Properties of Ternary Semiconductor In_xAl_{1 –} _xP Alloys

Farid Okbi, Said Lakel, Said Benramache and K. Almi p. 58 abstract

Spectroscopy, Interaction with Radiation

Study of the Luminescence Power of Excitons and Impurity–Defect Centers Excited via Two-Photon Absorption

A. A. Gladilin, V. P. Danilov, N. N. Il’ichev, V. P. Kalinushkin, M. I. Studenikin, O. V. Uvarov, V. A. Chapnin, A. V. Ryabova, A. V. Sidorin, E. S. Gulyamova, V. V. Tumorin and P. P. Pashinin p. 67 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Hydrothermal Growth of Undoped and Zn-Doped SnO Nanocrystals: A Frequency Dependence of AC Conductivity and Dielectric Response Studies

A. Viswanath Gowd and R. Thangavel p. 73 abstract

Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base

Soumava Ghosh, Bratati Mukhopadhyay and Gopa Sen p. 77 abstract

Carbon Nanotubes and Graphene Powder Based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors

Muhammad Tariq Saeed Chani, Khasan S. Karimov and Abdullah M. Asiri p. 85 abstract

Amorphous, Vitreous, and Organic Semiconductors

Comparison of the Effects of Environmental Treatments on Hydrogen Concentration and Energy Gap Variations of Hydrogenated Amorphous and Polymorphous Silicon Films Prepared by PECVD Technique

Alireza Keramatzadeh, Abdolnabi Kosarian and Hooman Kaabi p. 91 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Anomalous Edge Emission from Zinc Selenide Heavily Doped with Oxygen

N. K. Morozova and I. N. Miroshnikova p. 102 abstract

Physics of Semiconductor Devices

Optimization of the In_0.3Ga_0.7As-Layer Thickness in a Triple-Junction In_0.3Ga_0.7As/GaAs/In_0.5Ga_0.5P Solar Cell

D. M. Legan, O. P. Pchelyakov and V. V. Preobrazhenskii p. 108 abstract

Multidimensional dU/dT Effect in High-Power Thyristors

S. N. Yurkov, T. T. Mnatsakanov and A. G. Tandoev p. 112 abstract

Temperature Dependence of Losses in Mechanical Resonator Fabricated via the Direct Bonding of Silicon Strips

L. G. Prokhorov, A. V. Svetaev, B. S. Lunin, N. R. Zapotylko, A. A. Katkov and V. P. Mitrofanov p. 117 abstract

High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

A. I. Mikhaylov, A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov and A. Schöner p. 122 abstract

Strong Coupling of Excitons in Hexagonal GaN Microcavities

A. V. Belonovskii, G. Pozina, I. V. Levitskii, K. M. Morozov, M. I. Mitrofanov, E. I. Girshova, K. A. Ivanov, S. N. Rodin, V. P. Evtikhiev and M. A. Kaliteevski p. 127 abstract

High-Performance Growth of Terahertz Quantum Cascade Laser Structures by Solid Source MBE

Tao Jiang, Changle Shen, Zhiqiang Zhan, Jia Li, Ruijiao Zou, Jia Wen Luo, Ke Yu Li, Xuemin Wang and Weidong Wu p. 131 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions

M. S. Tuzhilkin, P. G. Bespalova, M. V. Mishin, I. E. Kolesnikov, K. V. Karabeshkin, P. A. Karaseov and A. I. Titov p. 137 abstract

Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode

N. D. Il’inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon’kov and A. S. Potapov p. 144 abstract

Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures

E. V. Edinach, A. D. Krivoruchko, A. S. Gurin, M. V. Muzafarova, I. V. Ilyin, R. A. Babunts, N. G. Romanov, A. G. Badalyan and P. G. Baranov p. 150 abstract

Errata

Erratum to: First-Principles Investigation of Electronic Properties of GaAs_xSb_1 – x Ternary Alloys

A. K. Singh, Devesh Chandra, Sandhya Kattayat, Shalendra Kumar, P. A. Alvi and Amit Rathi p. 157 abstract

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