Contents
Semiconductors

Vol. 35, No. 1, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Reviews

Magnetotransistors

I. M. Vikulin, L. F. Vikulina, and V. I. Stafeev p. 1  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Kinetics of Production of Oxygen-Containing Quenched-in Donors in Silicon
and Their Nonuniform Distribution: An Analytical Solution

P. A. Selishchev p. 10  abstract

Mössbauer-Effect Study of Off-Center Atoms in IV–VI Semiconductors

J. Bland, M. F. Thomas, V. A. Virchenko, V. S. Kuz'min, and T. M. Tkachenko p. 14  abstract

A Long-Range Influence of the Argon-Ion Irradiation on the Silicon Nitride Layers Formed
by the Ion Implantation

E. S. Demidov, V. V. Karzanov, D. A. Lobanov, K. A. Markov, and V. V. Sdobnyakov p. 20  abstract

Electronic and Optical Properties of Semiconductors

A Study of Luminescence Centers Related to Copper and Oxygen in ZnSe

N. K. Morozova, I. A. Karetnikov, V. V. Blinov, and E. M. Gavrishchuk p. 24  abstract

The Concentration Dependence of Acceptor-State Radii in p-Hg0.78Cd0.22Te Crystals

V. V. Bogoboyashchiframe0 p. 33  abstract

Infrared Tomography of the Charge-Carrier Lifetime and Diffusion Length
in Semiconductor-Grade Silicon Ingots

V. D. Akhmetov and N. V. Fateev p. 40  abstract

Observation of Minority-Carrier Traps in Schottky Diodes with a High Barrier
and a Compensated Near-Contact Region Using Deep-Level Transient Spectroscopy

E. N. Agafonov, U. A. Aminov, A. N. Georgobiani, and L. S. Lepnev p. 48  abstract

Effect of the Charge-Carrier Drift in a Built-in Quasi-Electric Field
on the Emission Spectrum of the Graded-Gap Semiconductors

A. I. Bazyk, V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov p. 54  abstract

The Electronic Spectrum and Electrical Properties of Germanium
with a Doubly Charged Gold Impurity on Both Sides of the L1 frame1 1 Intervalley
Transition for Uniform Pressures of up to 7 GPa

M. I. Daunov, I. K. Kamilov, and S. F. Gabibov p. 59  abstract

Distribution of Electrons between Valleys and Band-Gap Narrowing
at Picosecond Superluminescence in GaAs

N. N. Ageeva, I. L. Bronevoframe2, and A. N. Krivonosov p. 67  abstract

On the Physical Nature of a Photomechanical Effect

A. B. Gerasimov, G. D. Chiradze, and N. G. Kutivadze p. 72  abstract

Semiconductor Structures, Interfaces, and Surfaces

Excess Tunneling Currents in p-Si–n-3C-SiC Heterostructures

S. Zh. Karazhanov, I. G. Atabaev, T. M. Saliev, É. V. Kanaki, and E. Dzhaksimov p. 77  abstract

Effect of Sulfur and Selenium on the Surface Relief of Insulating Films
and Electrical Characteristics of Metal–Insulator–p-GaAs Structures

A. V. Panin, A. R. Shugurov, and V. M. Kalygina p. 80  abstract

Low-Dimensional Systems

Deep Levels Related to Gallium Atom Clusters in GaAs

S. N. Grinyaev and V. A. Chaldyshev p. 86  abstract

Vibrational Spectra of Strained (001) ZnSe/ZnS, ZnSe/ZnTe, and ZnS/ZnTe Superlattices
in Terms of the Keating Model

E. N. Prykina, Yu. I. Polygalov, and A. V. Kopytov p. 91  abstract

Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology
and Photoelectronic Properties of Gas/InAs Heterostructures Grown
by Metal-Organic Chemical Vapor Deposition

B. N. Zvonkov, I. A. Karpovich, N. V. Baframe3dus’, D. O. Filatov, and S. V. Morozov p. 93  abstract

Persistent Photoeffects in p–i–n GaAs/AlGaAs Heterostructures
with Double Quantum Wells

S. I. Dorozhkin, V. B. Timofeev, and J. Hvam p. 99  abstract

Resonance Tunneling of X-Electrons in AlAs/GaAs(111) Structures:
Pseudopotential Calculations and Models

G. F. Karavaev and V. N. Chernyshov p. 106  abstract

Charge-Carrier Transport in Nanometer-Sized Periodic Si/CaF2 structures
with Participation of Traps

Yu. A. Berashevich, A. L. Danilyuk, A. N. Kholod, and V. E. Borisenko p. 112  abstract

Physics of Semiconductor Devices

An Avalanche Photodiode with Metal–Insulator–Semiconductor Properties

Z. Ya. Sadygov, T. M. Burbaev,, and V. A. Kurbatov p. 117  abstract

Personalia

Vladimir Mikhaframe4lovich Arutyunyan (dedicated to his 60th birthday) p. 122

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