Contents
Semiconductors
Vol. 35, No. 1, 2001
Simultaneous
English language translation of the journal is available from
MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors
ISSN 1063-7826.
Reviews
Magnetotransistors
I. M. Vikulin, L. F. Vikulina, and V. I. Stafeev p. 1 abstract
Atomic Structure and Nonelectronic Properties of Semiconductors
Kinetics of
Production of Oxygen-Containing Quenched-in Donors in Silicon
and Their Nonuniform Distribution: An Analytical Solution
P. A. Selishchev p. 10 abstract
Mössbauer-Effect Study of Off-Center Atoms in IVVI Semiconductors
J. Bland, M. F. Thomas, V. A. Virchenko, V. S. Kuz'min, and T. M. Tkachenko p. 14 abstract
A Long-Range
Influence of the Argon-Ion Irradiation on the Silicon Nitride
Layers Formed
by the Ion Implantation
E. S. Demidov, V. V. Karzanov, D. A. Lobanov, K. A. Markov, and V. V. Sdobnyakov p. 20 abstract
Electronic and Optical Properties of Semiconductors
A Study of Luminescence Centers Related to Copper and Oxygen in ZnSe
N. K. Morozova, I. A. Karetnikov, V. V. Blinov, and E. M. Gavrishchuk p. 24 abstract
The Concentration Dependence of Acceptor-State Radii in p-Hg0.78Cd0.22Te Crystals
V. V. Bogoboyashchi
p. 33 abstract
Infrared
Tomography of the Charge-Carrier Lifetime and Diffusion Length
in Semiconductor-Grade Silicon Ingots
V. D. Akhmetov and N. V. Fateev p. 40 abstract
Observation of
Minority-Carrier Traps in Schottky Diodes with a High Barrier
and a Compensated Near-Contact Region Using Deep-Level Transient
Spectroscopy
E. N. Agafonov, U. A. Aminov, A. N. Georgobiani, and L. S. Lepnev p. 48 abstract
Effect of the
Charge-Carrier Drift in a Built-in Quasi-Electric Field
on the Emission Spectrum of the Graded-Gap Semiconductors
A. I. Bazyk, V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov p. 54 abstract
The Electronic
Spectrum and Electrical Properties of Germanium
with a Doubly Charged Gold Impurity on Both Sides of the L1
1
Intervalley
Transition for Uniform Pressures of up to 7 GPa
M. I. Daunov, I. K. Kamilov, and S. F. Gabibov p. 59 abstract
Distribution of
Electrons between Valleys and Band-Gap Narrowing
at Picosecond Superluminescence in GaAs
N. N. Ageeva, I. L. Bronevo
, and A. N. Krivonosov p. 67 abstract
On the Physical Nature of a Photomechanical Effect
A. B. Gerasimov, G. D. Chiradze, and N. G. Kutivadze p. 72 abstract
Semiconductor Structures, Interfaces, and Surfaces
Excess Tunneling Currents in p-Sin-3C-SiC Heterostructures
S. Zh. Karazhanov, I. G. Atabaev, T. M. Saliev, É. V. Kanaki, and E. Dzhaksimov p. 77 abstract
Effect of Sulfur
and Selenium on the Surface Relief of Insulating Films
and Electrical Characteristics of MetalInsulatorp-GaAs
Structures
A. V. Panin, A. R. Shugurov, and V. M. Kalygina p. 80 abstract
Low-Dimensional Systems
Deep Levels Related to Gallium Atom Clusters in GaAs
S. N. Grinyaev and V. A. Chaldyshev p. 86 abstract
Vibrational
Spectra of Strained (001) ZnSe/ZnS, ZnSe/ZnTe, and ZnS/ZnTe
Superlattices
in Terms of the Keating Model
E. N. Prykina, Yu. I. Polygalov, and A. V. Kopytov p. 91 abstract
Influence of
Bismuth Doping of InAs Quantum-Dot Layer on the Morphology
and Photoelectronic Properties of Gas/InAs Heterostructures Grown
by Metal-Organic Chemical Vapor Deposition
B. N. Zvonkov, I. A. Karpovich, N. V. Ba
dus, D. O. Filatov, and S. V. Morozov p. 93 abstract
Persistent
Photoeffects in pin GaAs/AlGaAs
Heterostructures
with Double Quantum Wells
S. I. Dorozhkin, V. B. Timofeev, and J. Hvam p. 99 abstract
Resonance
Tunneling of X-Electrons in AlAs/GaAs(111) Structures:
Pseudopotential Calculations and Models
G. F. Karavaev and V. N. Chernyshov p. 106 abstract
Charge-Carrier
Transport in Nanometer-Sized Periodic Si/CaF2
structures
with Participation of Traps
Yu. A. Berashevich, A. L. Danilyuk, A. N. Kholod, and V. E. Borisenko p. 112 abstract
Physics of Semiconductor Devices
An Avalanche Photodiode with MetalInsulatorSemiconductor Properties
Z. Ya. Sadygov, T. M. Burbaev,, and V. A. Kurbatov p. 117 abstract
Personalia
Vladimir Mikhalovich Arutyunyan (dedicated to his 60th
birthday) p. 122
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