Vol. 53, No. 1, 2019

Semiconductors

Electronic Properties of Semiconductors

Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals

A. A. Gladilin, N. N. Ilichev, V. P. Kalinushkin, M. I. Studenikin, O. V. Uvarov, V. A. Chapnin, V. V. Tumorin and G. G. Novikov p. 1 abstract

Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium

V. F. Bannaya and E. V. Nikitina p. 9 abstract

Surfaces, Interfaces, and Thin Films

Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals

R. K. Yafarov p. 14 abstract

Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping

A. N. Gruzintsev and A. N. Redkin p. 22 abstract

Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures

N. A. Torkhov p. 28 abstract

Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi_{1 –} _xSb_x)₂Te₃ Topological Insulators

A. V. Galeeva, M. A. Gomanko, M. E. Tamm, L. V. Yashina, S. N. Danilov, L. I. Ryabova and D. R. Khokhlov p. 37 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements

E. I. Goldman, N. F. Kuharskaya, S. A. Levashov and G. V. Chucheva p. 42 abstract

Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE

M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, R. V. Levin, I. A. Andreev, E. V. Kunitsyna and Yu. P. Yakovlev p. 46 abstract

Amorphous, Vitreous, and Organic Semiconductors

The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films

M. A. Elistratova, I. B. Zakharova, G. V. Li, R. M. Dubrovin and O. M. Sreseli p. 51 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters

S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, V. I. Orlov, O. V. Feklisova, L. A. Pavlova and R. V. Presnyakov p. 55 abstract

Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining

I. E. Tyschenko, E. D. Zhanaev and V. P. Popov p. 60 abstract

Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In_xGa_{1 –} _xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology

P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsentyev, H. Leiste and M. Rinke p. 65 abstract

Investigation into the Memristor Effect in Nanocrystalline ZnO Films

V. A. Smirnov, R. V. Tominov, V. I. Avilov, N. I. Alyabieva, Z. E. Vakulov, E. G. Zamburg, D. A. Khakhulin and O. A. Ageev p. 72 abstract

Carbon Systems

A Chainlike Model of the Zigzag Edge Decoration of Graphene

S. Yu. Davydov p. 78 abstract

Physics of Semiconductor Devices

On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect

E. I. Goldman, A. Nabiev, V. G. Naryshkina and G. V. Chucheva p. 85 abstract

Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis

G. S. Khrypunov, A. V. Meriuts, T. N. Shelest and M. G Khrypunov p. 89 abstract

Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell

A. A. Svintsov, E. B. Yakimov, M. V. Dorokhin, P. B. Demina and Yu. M. Kuznetsov p. 96 abstract

Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov and Y. G. Shreter p. 99 abstract

Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure

N. D. Kuzmichev and M. A. Vasyutin p. 106 abstract

Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO₂ Interface in a MOS Transistor

N. A. Kulikov and V. D. Popov p. 110 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence

G. V. Li, E. V. Astrova and A. I. Lihachev p. 114 abstract

Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method

V. G. Shchukin, R. G. Sharafutdinov and V. O. Konstantinov p. 127 abstract

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

V. A. Shvets, I. A. Azarov, D. V. Marin, M. V. Yakushev and S. V. Rykhlitsky p. 132 abstract

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