Contents
Semiconductors

Vol. 47, No. 1, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Superstructured Ordering in Al_xGa_1–xAs and Ga_xIn_1–xP Alloys

P. V. Seredin, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov,
A. L. Stankevich, and T. Prutskij p. 1  abstract

Properties of Epitaxial (Al_xGa_1–xAs)_1–yC_y Alloys Grown by MOCVD Autoepitaxy

P. V. Seredin, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, and A. L. Stankevich p. 7  abstract

Influence of the Nature of a Condensate Material on the Formation
of an Ensemble of Islands during Cryochemical Synthesis from the Vapor Phase

A. P. Belyaev, V. P. Rubets, and V. V. Antipov p. 13  abstract

Electronic Properties of Semiconductors

Features of the Energy Spectrum and Hole-Scattering Mechanisms in PbSb₂Te₄

S. A. Nemov, N. M. Blagikh, and L. E. Shelimova p. 16  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

On the Lifetime of Charge Carriers in Quantum Dots at Low Temperatures

D. M. Samosvat, V. P. Evtikhiev, A. S. Shkol’nik, and G. G. Zegrya p. 22  abstract

Two-Color Luminescence from a Single Type-II InAsSbP/InAs Heterostructure

M. M. Grigoryev, P. A. Alekseev, E. V. Ivanov, and K. D. Moiseev p. 28  abstract

Electron Scattering in AlGaN/GaN Heterostructures with a Two-Dimensional Electron Gas

D. Yu. Protasov, T. V. Malin, A. V. Tikhonov, A. F. Tsatsulnikov, and K. S. Zhuravlev p. 33  abstract

Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe Structures
with Different Parameters of Quantum Wells

V. F. Agekyan, A. Yu. Serov, N. G. Filosofov, and G. Karczewski p. 45  abstract

Lateral Growth and Shape of Semiconductor Nanowires

V. G. Dubrovskii, M. A. Timofeeva, M. Tchernycheva, and A. D. Bolshakov p. 50  abstract

Photoelectric Diagnostics Method for InGaN/GaN Multiple-Quantum-Well Heterostructures

M. V. Baranovskiy, G. F. Glinskii, and M. S. Mironova p. 58  abstract

Optical Resonance Identification of Long-Range Electron Tunneling
between Superlattice Levels in an Electric Field

A. A. Andronov, E. P. Dodin, D. I. Zinchenko, and Yu. N. Nozdrin p. 63  abstract

On the Theory of the Photoelectric Effect in Surface-Graded-Gap Semiconductors

V. A. Kholodnov p. 66  abstract

Superlinear Electroluminescence in GaSb-based Heterostructures
with High Potential Barriers

K. V. Kalinina, M. P. Mikhailova, B. E. Zhurtanov, N. D. Stoyanov, and Yu. P. Yakovlev p. 73  abstract

Effect of Rapid Thermal Annealing on the Current–Voltage Characteristics
of 4H-SiC Schottky Diodes

P. A. Ivanov, N. D. Il’inskaya, A. S. Potapov, T. P. Samsonova,
A. V. Afanas’ev, and V. A. Il’in p. 81  abstract

Optical Anisotropy of InGaAs Quantum Dots

S. A. Blokhin, A. M. Nadtochiy, A. A. Krasivichev, L. Ya. Karachinsky, A. P. Vasil’ev,
V. N. Nevedomskiy, M. V. Maximov, G. E. Cirlin, A. D. Buravlev, N. A. Maleev,
A. E. Zhukov, N. N. Ledentsov, and V. M. Ustinov p.85  abstract

Amorphous, Vitreous, and Organic Semiconductors

Study of the Structure of a-As₂Se₃Bi_x Amorphous Layers by Dielectric Spectroscopy

N. I. Anisimova, V. A. Bordovsky, G. I. Grabko, and R. A. Kastro p. 90  abstract

Carbon Systems

On the Specific Features of the Density of States of Epitaxial Graphene Formed
on Metal and Semiconductor Substrates

S. Yu. Davydov p. 95  abstract

Optical Spectroscopy of Thin C₆₀:CdS Composite Films

I. B. Zakharova, V. M. Ziminov, A. V. Nashchekin, Yu. S. Vainshtein, and A. N. Aleshin p. 105  abstract

Physics of Semiconductor Devices

Edge Electroluminescence in Small-Area Silicon p⁺–n Diodes Heavily Doped with Boron:
Analysis of Model Representations

A. M. Emel’yanov p. 110  abstract

Specific Features of the Steady-State Carrier Distribution
and Holding Current in an Optically Triggered SiC Thyristor

V. S. Yuferev, M. E. Levinshtein, and J. W. Palmour p. 116  abstract

Semiconductor Lasers with Internal Wavelength Selection

V. V. Zolotarev, A. Yu. Leshko, A. V. Lyutetskii, D. N. Nikolaev, N. A. Pikhtin,
A. A. Podoskin, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. N. Arsent’ev,
L. S. Vavilova, K. V. Bakhvalov, and I. S. Tarasov p. 122  abstract

Tunnel Injection and Power Efficiency of InGaN/GaN Light-Emitting Diodes

N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, P. E. Latyshev, Yu. S. Lelikov,
Yu. T. Rebane, A. I. Tsyuk, and Yu. G. Shreter p. 127  abstract

Acoustoelectron Interaction in Quantum Laser Heterostructures

L. A. Kulakova, N. S. Averkiev, A. V. Lyutetskiy, and V. A. Gorelov p. 135  abstract

XVI Symposium “Nanophysics and Nanoelectronics”,
Nizhni Novgorod, March 12–16, 2012

Features of the Time Evolution of Localized Quantum States in Graphene

M. J. Majid and S. S. Savinskii p. 141  abstract

Photoluminescence Dynamics in InGaAsSb/AlGaAsSb Quantum Well Nanostructures

M. Ya. Vinnichenko, D. A. Firsov, L. E. Vorobjev, M. O. Mashko, L. Shterengas, and G. Belenky p. 146  abstract

Modeling of High-Power HEMT Irradiated with High-Energy Photons

E. A. Tarasova, D. S. Demidova, S. V. Obolensky, A. G. Fefelov, and D. I. Ducov p. 152  abstract

MOCVD-Grown Heterostructures with GaAs/AlGaAs Superlattices:
Growth Features and Optical and Transport Characteristics

N. V. Baidus, A. A. Biryukov, E. P. Dodin, Yu. N. Drozdov, M. N. Drozdov,
Yu. N. Nozdrin, and A. A. Andronov p. 158  abstract

Analysis of the Temperature Dependence of the Capacitance–Voltage Characteristics
of InGaN/GaN Multiple Quantum Well Light-Emitting Structures

O. A. Soltanovich and E. B. Yakimov p. 162  abstract

Temperature Renormalization of the Conduction Electron g Factor in Silicon

A. A. Konakov, V. A. Burdov, A. A. Ezhevskii, A. V. Soukhorukov, D. V. Guseinov, and S. A. Popkov p. 169  abstract

Long-Term Photoconductivity Decay in n-InGaAs/GaAs Heterostructures
with Coupled Quantum Wells under Band-to-Band Excitation

V. V. Vainberg, V. M. Vasetskii, Yu. N. Gudenko, V. N. Poroshin,
N. V. Baidus, and B. N. Zvonkov p. 174  abstract

Photoluminescence in Dense Arrays of Silicon Nanocrystals:
the Role of the Concentration and Average Size

V. A. Belyakov, K. V. Sydorenko, A. A. Konakov, N. V. Kurova, and V. A. Burdov p.178  abstract

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.