Contents
Semiconductors

Vol. 45, No. 1, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Review

Fast Optical Detecting Media Based on Semiconductor Nanostructures
for Recording Images Obtained Using Charges of Free Photocarriers

P. G. Kasherininov, A. A. Tomasov, and E. V. Beregulin p. 1  abstract

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Chlorine Adsorption on the InAs (001) Surface

A. V. Bakulin, S. V. Eremeev, O. E. Tereshchenko, and S. E. Kulkova p. 21  abstract

Electronic Properties of Semiconductors

The Influence of -Ray Radiation on Electrical Properties of CuGaSe₂

I. Kasumoglu, T. G. Kerimova, and I. A. Mamedova p. 30  abstract

Grain Boundary Related Electrical Transport in Al-rich Al_xGa_1–xN Layers Grown
by Metal–Organic Chemical Vapor Deposition

A. Yildiz, P. Tasli, B. Sarikavak, S. B. Lisesivdin, M. K. Ozturk,
M. Kasap, S. Ozcelik, and E. Ozbay p. 33  abstract

Features of the Charge-Transport Mechanism
in Layered Bi₂Te₃ Single Crystals Doped with Chlorine and Terbium

N. A. Abdullaev, N. M. Abdullaev, H. V. Aliguliyeva, T. G. Kerimova,
G. S. Mehdiyev, and S. A. Nemov p. 37  abstract

On the Resonant Donor Level in n-CdTe According to Data
on Electron Transport under Hydrostatic Pressure

M. I. Daunov, A. S. Kovalev, A. Yu. Mollaev, and A. B. Magomedov p. 43  abstract

A Thermally Induced Junction between Impurity-Conduction
and Intrinsic-Conduction Regions

M. M. Gadjialiev, I. K. Kamilov, and Z. Sh. Pirmagomedov p. 47  abstract

Conductivity of Hg₃In₂Te₆ Crystals in High Electric Fields

O. G. Grushka, S. M. Chupyra, O. M. Myslyuk, S. V. Bilichuk, and I. I. Zabolotsky p. 49  abstract

Current–Voltage Characteristics of ZnGa₂Se₄ Compound Polycrystals

B. G. Tagiev, O. B. Tagiev, and S. G. Asadullayeva p. 52  abstract

Surfaces, Interfaces, and Thin Films

The Morphology, Electron Structure, and Optical Properties
of Self-Assembled Silicon Nanostructures on the Surface of Highly Oriented Pyrolytic Graphite

A. V. Nezhdanov, D. O. Filatov, D. A. Antonov, S. Yu. Zubkov,
A. I. Mashin, and A. V. Ershov p. 56  abstract

Measurement of Surface Recombination Velocity and Bulk Lifetime
in Si Wafers by the Kinetics of Excess Thermal Emission

A. V. Zinovchuk and A. K. Tkachenko p. 61  abstract

On the Maximum Thickness of the Space-Charge Region
of Reverse Biased p⁺–n Junctions with a Positive Bevel

A. S. Kyureguan p.66  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

The Effect of the Periphery of Metal–Semiconductor Schottky-Barrier Contacts
on their Electrical Characteristics

N. A. Torkhov and V. A. Novikov p. 69  abstract

On the Nature of Electroluminescence at 1.5 m in the Breakdown Mode
of Reverse-Biased Er-Doped Silicon p–n-Junction Structures Grown
by Sublimation Molecular Beam Epitaxy

A. V. Kornaukhov, A. A. Ezhevskii, M. O. Marychev, D. O. Filatov, and V. G. Shengurov p. 85  abstract

Modeling of the Hysteretic Phenomena in RHEED Intensity Variation
Versus Temperature for GaAs and InAs Surfaces

kos Nemcsics and Jen Takcs p. 91  abstract

Type-I Semiconductor Heterostructures with an Indirect-Gap Conduction Band

T. S. Shamirzaev p. 96  abstract

Temperature-Dependent Excitonic Absorption
in Long-Period Multiple In_xGa_1–xAs/GaAs Quantum Well Structures

S. A. Vaganov and R. P. Seisyan p. 103  abstract

Electron–Electron Interaction and Spin–Orbit Coupling in InAs/AlSb Heterostructures
with a Two-Dimensional Electron Gas

V. I. Gavrilenko, S. S. Krishtopenko, and M. Goiran p. 110  abstract

Amorphous, Vitreous, and Organic Semiconductors

Electrical, Optical, and Mechanical Properties of Amorphous
Hydrogenated Carbon Obtained under Various Deposition Conditions

A. A. Babaev, S. B. Sultanov, M. Sh. Abdulvagabov, and E. I. Terukov p. 118  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Influence of Dislocations on the Process of Pore Formation in n-InP (111) Single Crystals

Y. A. Suchikova, V. V. Kidalov, and G. A. Sukach p. 121  abstract

The Effect of Thermal Annealing on the Structure of Nanocrystalline Zinc Sulfide Films

P. N. Krylov, E. A. Romanov, and I. V. Fedotova p. 125  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Dependence of the Concentration of Ionized Donors on Epitaxy Temperature
for Si:Er/Si Layers Grown by Sublimation Molecular-Beam Epitaxy

V. P. Kuznetsov, V. B. Shmagin, M. N. Drozdov, M. O. Marychev, K. E. Kudryavtsev,
M. V. Kuznetsov, B. A. Andreev, A. V. Kornaukhov, and Z. F. Krasilnik p. 130  abstract

The Effect of Neutron Irradiation and Annealing Temperature
on the Electrical Properties and Lattice Constant of Epitaxial Gallium Nitride Layers

V. M. Boyko, S. S. Verevkin, N. G. Kolin, A. V. Korulin, D. I. Merkurisov,
A. Y. Polyakov, and V. A. Chevychelov p.134  abstract

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