Contents
Semiconductors

Vol. 44, No. 1, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Review

Defect Engineering in Implantation Technology
of Silicon Light-Emitting Structures with Dislocation-Related Luminescence

N. A. Sobolev p. 1  abstract

Atomic Structure and Nonelectronic Propertties of Semiconductors

Determination of the Composition of Binary Chalcogenide Glasses
by X-Ray Fluorescence Analysis

G. A. Bordovsky, A. V. Marchenko, P. P. Seregin, N. N. Smirnova, and E. I. Terukov p. 24  abstract

Electrical and Optical Properties of Semiconductors

Spreading Resistance and Compensation of Charge Carriers
in Ferromagnetic Silicon Implanted with Manganese

A. F. Orlov, L. A. Balagurov, I. V. Kulemanov, Yu. N. Parkhomenko,
A. V. Kartavykh, V. V. Saraikin, Yu. A. Agafonov, and V. I. Zinenko p. 28  abstract

Effect of Growth Temperature on Properties of Transparent Conducting Gallium-Doped ZnO Films

A. Kh. Abduev, A. K. Akhmedov, A. Sh. Asvarov, A. A. Abdullaev, and S. N. Sulyanov p. 32  abstract

Growth of the (In₂S₃)_x(FeIn₂S₄)_1–x Single Crystals and Properties
of Photoelectric Structures on Their Basis

I. V. Bodnar, V. Yu. Rud, Yu. V. Rud, and E. I. Terukov p. 37  abstract

Inherent Potential Inhomogeneity on the Semiconductor Surface
for Equilibrium Impurity Distribution

V. B. Bondarenko, S. N. Davydov, and A. V. Filimonov p. 41  abstract

Discovery of the (In₂S₃)_x(MnIn₂S₄)_1–x Solid Solutions and Fabrication
of Photosensitive Structures Based on Them

V. Yu. Rud, Yu. V. Rud, M. A. Osipova, and I. V. Bodnar p. 45  abstract

Semiconductor Structures, Interfaces, and Surfaces

Dynamics of Photoluminescence and Recombination Processes in Sb-Containing Laser Nanostructures

D. A. Firsov, L. Shterengas, G. Kipshidze, V. L. Zerova, T. Hosoda,
P. Thumrongsilapa, L. E. Vorobjev, and G. Belenky p. 50  abstract

Monitoring the Composition of the Cd_1–zZn_zTe Heteroepitaxial Layers
by Spectroscopic Ellipsometry

M. V. Yakushev, V. A. Shvets, I. A. Azarov, S. V. Rykhlytski, Yu. G. Sidorov,
E. V. Spesivtsev, and T. S. Shamirzaev p.59 abstract

Low-Dimensional Systems

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb Type II Heterostructures
with Deep Quantum Wells at the Interface

M. P. Mikhailova, E. V. Ivanov, K. D. Moiseev, Yu. P. Yakovlev, E. Hulicius,
A. Hospodkova, J. Pangrac, and T. Simeek p. 66  abstract

Formation of Three-Dimensional ZnSe-Based Semiconductor Nanostructures

S. V. Alyshev, A. O. Zabezhaylov, R. A. Mironov, V. I. Kozlovsky, and E. M. Dianov p. 72  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Charge Carrier Transport in Ge₂₀As₂₀S₆₀ Chalcogenide Semiconductor Films

L. P. Kazakova, K. D. Tsendin, E. A. Lebedev, D. Arsova, and I. A. Obukhova p. 76  abstract

The Nature of Emission of Porous Silicon Produced by Chemical Etching

N. E. Korsunskaya, T. R. Stara, L. Yu. Khomenkova, K. V. Svezhentsova,
N. N. Melnichenko, and F. F. Sizov p. 79  abstract

Estimation of the Adequacy of the Fractal Model
of the Atomic Structure of Amorphous Silicon

A. B. Golodenko p. 84  abstract

Detection of Singlet Oxygen in Photoexcited Porous Silicon Nanocrystals
by Photoluminescence Measurements

M. B. Gongalsky, E. A. Konstantinova, L. A. Osminkina, and V. Yu. Timoshenko p. 89  abstract

Physics of Semiconductor Devices

Active Region Based on Graded-Gap InGaN/GaN Superlattices
for High-Power 440- to 470-nm Light-Emitting Diodes

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov,
A. E. Nikolaev, N. A. Cherkashin, B. Ya. Ber, D. Yu. Kazantsev, M. N. Mizerov,
Hee Seok Park, M. Hytch, and F. Hue p. 93  abstract

Paradoxes of Photoconductive Target and Optical Control of Secondary Ion Yield

A. G. Rokakh and M. D. Matasov p. 98  abstract

Efficient Infrared–Terahertz Pulse Conversion in Waveguide Semiconductor Structures

V. A. Kukushkin p. 106  abstract

Fabrication, Treatment, and Testing of Materials and Structures

The Initial Stage of Growth of Crystalline Nanowhiskers

N. V. Sibirev, M. B. Nazarenko, G. E. Cirlin, Yu. B. Samsonenko, and V. G. Dubrovskii p. 112  abstract

The Role of Stress Distribution at the Film/Barrier Interface in Formation of Copper Silicides

A. V. Panin, A. R. Shugurov, I. V. Ivonin, and Ye. V. Shesterikov p. 116  abstract

Effect of Pressure in the Growth Reactor on the Properties
of the Active Region in the InGaN/GaN Light-Emitting Diodes

W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. V. Sakharov, S. O. Usov,
A. E. Nikolaev, D. V. Davydov, N. A. Cherkashin, and A. F. Tsatsulnikov p. 123  abstract

Monte Carlo Simulation of Growth of Nanowhiskers

A. G. Nastovjak, I. G. Neizvestny, I. L. Shwartz, and Z. Sh. Yanovitskaya p. 127  abstract

In Memoriam

To the Memory of Mikhail Grigor’evich Mil’vidskii (1932–2009) p. 133

Rules for the Authors p.134

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