Contents

Semiconductors

Vol. 53, No. 15, 2019

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Basic Research

Influence of Holes Capture Efficiency on Photoluminescence Temperature Dependence of n-AlGaAs/GaAs Quantum-Well Structures

N. G. Yaremenko, V. A. Strakhov and M. V. Karachevtseva p. 1975  abstract

Determination of the Bulk Conductivity of III–V Semiconductors in a Strong Constant Electric Field and under Harmonic Effects

I. V. Malyshev, K. A. Fil and O. A. Goncharova p. 1979  abstract

Electronics Materials

State of the Surface of Polycrystalline Silver after Exposure to Activated Oxygen

O. G. Ashkhotov, S. A. Khubezhov and I. B. Ashkhotova p. 1983  abstract

Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation

Ya. S. Grishina, N. I. Borgardt, R. L. Volkov, D. G. Gromov and A. I. Savitskiy p. 1986  abstract

Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature

T. M. Gadzhiev, M. A. Aliev, A. Sh. Asvarov, R. M. Gadzhieva, B. A. Bilalov, A. M. Ismailov and Z. V. Shomakhov p. 1992  abstract

Optical Properties of Composite Materials Based on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-Phenylenevinylene] and Titanium Dioxide in the Mid-IR Spectral Range

I. A. Belogorokhov and L. I. Belogorokhova p. 1999  abstract

Technological Processes and Routes

Mathematical Model of the Evaporation of Amalgam Components in Discharge Radiation Sources

N. Yu. Petrenko, S. V. Puchnina and S. A. Gavrilov p. 2002  abstract

Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds

E. N. Vigdorovich p. 2007  abstract

Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC

V. I. Egorkin, V. E. Zemlyakov, A. V. Nezhentsev, V. A. Gudkov and V. I. Garmash p. 2012  abstract

Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques

S. D. Fedotov, E. M. Sokolov, V. N. Statsenko, A. V. Romashkin and S. P. Timoshenkov p. 2016  abstract

Study of the Formation Process of Memristor Structures Based on Copper Sulfide

A. N. Belov, A. A. Golishnikov, A. M. Mastinin, A. A. Perevalov and V. I. Shevyakov p. 2024  abstract

Elements of Integrated Electronics

Precession of Magnetization of a Spin-Valve Free Layer and Its Switching under the Effect of a Magnetic Field Perpendicular to the Anisotropy Axis

Iu. A. Iusipova p. 2029  abstract

Field-Emission Cathodes Based on Microchannel Plates

Z. M. Khamdokhov, Z. Ch. Margushev, E. Z. Khamdokhov, R. Sh. Teshev and M. D. Bavizhev p. 2037  abstract

Investigation of the Temperature Effect on the Output Parameters of Radioisotope Sources of Electricity Based on Double Energy Conversion of Radiative Decay

S. G. Novikov, A. V. Berintsev, A. S. Alekseev, A. I. Somov and V. V. Svetukhin p. 2040  abstract