Contents
Semiconductors
Vol. 42, No. 13, 2008
Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Basic Research
Quasi-Reflectionless Potentials in Semiconductor Nanoheterostructures
A. A. Gorbatsevich, M. N. Zhuravlev, and V. V. Kapaev p. 1455 abstract
A Study of the Transport of Charge Carriers in Coupled Quantum Regions
B. G. Konoplev and E. A. Ryndin p. 1462 abstract
Materials for Electronic Engineering
Inclusions of Carbon in Ingots of Silicon Carbide Grown by the Modified Lely Method
D. D. Avrov, S. I. Dorozhkin, Yu. M. Tairov, A. Yu. Fadeev, and A. O. Lebedev p. 1469 abstract
New Technologies for Production of Polycrystalline Silicon for Solar Power Engineering
B. G. Gribov and K. V. Zinovev p. 1475 abstract
Photoluminescence of Si-Doped GaAs Epitaxial Layers
N. G. Yaremenko, M. V. Karachevtseva, V. A. Strakhov, G. B. Galiev, and V. G. Mokerov p. 1480 abstract
Phenomenological Description of Dispersion of 860-nm-Thick Silicon Thin Films
into Drops on Al2O3 Inert Surface
A. A. Buzdugan, S. A. Gavrilov, D. G. Gromov, E. N. Redichev, and I. S. Chulkov p. 1487 abstract
Study of Properties of Nanoscale Lead Zirconate Titanate Films
V. M. Roshchin, V. B. Yakovlev, M. V. Silibin, and M. S. Lovyagina p. 1492 abstract
Carbon Nanomaterial Studied by Atomic-Force and Electron Microscopies
I. I. Bobrinetski, V. N. Kukin, V. K. Nevolin, and M. M. Simunin p. 1496 abstract
Effect of Te on the Self-Activated Emission of ZnSe
N. K. Morozova and D. A. Mideros p. 1499 abstract
Charge State Distribution in the a-Si:H Mobility Gap
A. A. Sherchenkov and A. B. Apalkov p. 1503 abstract
Study of Model of Self-Coordinated Growth of Single Crystals of Sapphire
by Horizontal Directed Crystallization
S. P. Malyukov, B. A. Stefanovich, and D. I. Cherednichenko p. 1508 abstract
Effect of Treatment Technology for the Surface of Multicomponent Oxide Compounds
with Sillenite Structure on the Electron-Transition Kinetics in Surface Areas
A. N. Chaplygin, E. A. Spirin, and A. S. Sizov p. 1512 abstract
Microelectronics Technology
Charge State of Luminescence Centers in the SiSiO2 Structures Subjected
to Sequential Implantation with Silicon and Carbon Ions
A. P. Baraban and Yu. V. Petrov p. 1515 abstract
Local Etching of Silicon Using a Solid Mask from Porous Aluminum Oxide
A. N. Belov p. 1519 abstract
Microelectronic Devices and Systems
Study of Thermal Effects and Self-Heating Phenomena in Planar Power SOI MOS Transistors
Yu. A. Chaplygin, E. A. Artamonova, A. Yu. Krasyukov, and T. Yu. Krupkina p. 1522 abstract
Simulation and Optimization of the CMOS Structure with Vertically Integrated
Single-Contact Photodetectors with Separation of Colors in the Visible Spectral Region
E. B. Volodin, E. A. Ignateva, and V. V. Uzdovskii p. 1527 abstract
Determination of the Charge Transport Mechanism in pn Junctions
by Analyzing Temperature Dependences of Forward CurrentVoltage Characteristics
N. S. Grushko, A. V. Lakalin, and A. I. Somov p. 1532 abstract
Magnetically Controlled Two-Terminal Device with Negative Differential Resistance
and N-Type CurrentVoltage Characteristic
Yu. A. Chaplygin, A. I. Galushkov, A. A. Semenov, and D. A. Usanov p. 1536 abstract
Intrinsic Noise Variation in an Amplifier Based on a Heterojunction Bipolar Transistor
Amplifier in Nonlinear Mode
A. M. Bobreshov, L. I. Averina, A. V. Khripushin, and D. A. Makarenko p. 1541 abstract
NRZ-to-NRZM Code Converter Based on Gallium-Arsenide
Heterojunction Bipolar Transistors
V. P. Timoshenkov and V. A. Bratov p. 1545 abstract
Nanotechnology
Texturing Problems in Nanotechnology: Texture Control
S. K. Maksimov and K. S. Maksimov p. 1552 abstract
Microsystems
Analysis of the Effect of Material Anisotropic Properties on the Eigenfrequency
of Ring Cavities of Micromechanical Gyroscopes
S. A. Zotov p. 1557 abstract
MOS Structures with Amorphous Tungsten Trioxide for Capacitive Humidity Sensors
E. A. Tutov p. 1561 abstract
Parameter Estimation Technique for Sensitive Elements
of Microaccelerometers and Micromirrors
S. P. Timoshenkov, A. N. Boko, and B. M. Simonov p. 1564 abstract
Measurement Techniques
The Use of the Photorefractive Effect for Comprehensive Three-Dimensional
Local Measurements of Electrical and Thermal Parameters of Silicon Structures
A. L. Filatov and A. V. Lugovskop. 1569 abstract
Application of Inversion Voltammetry to Microimpurity Content Control
in Synthetic Sapphire
T. I. Khakhanina and A. A. Gurskaya p. 1573 abstract
Subject Index to Volume 42, 2008 p. 1577
Author Index to Volume 42, 2008 p. 1617
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