Contents
Semiconductors


Vol. 42, No. 13, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Basic Research

Quasi-Reflectionless Potentials in Semiconductor Nanoheterostructures

A. A. Gorbatsevich, M. N. Zhuravlev, and V. V. Kapaev p. 1455  abstract

A Study of the Transport of Charge Carriers in Coupled Quantum Regions

B. G. Konoplev and E. A. Ryndin p. 1462  abstract


Materials for Electronic Engineering

Inclusions of Carbon in Ingots of Silicon Carbide Grown by the Modified Lely Method

D. D. Avrov, S. I. Dorozhkin, Yu. M. Tairov, A. Yu. Fadeev, and A. O. Lebedev p. 1469  abstract

New Technologies for Production of Polycrystalline Silicon for Solar Power Engineering

B. G. Gribov and K. V. Zinov’ev p. 1475  abstract

Photoluminescence of Si-Doped GaAs Epitaxial Layers

N. G. Yaremenko, M. V. Karachevtseva, V. A. Strakhov, G. B. Galiev, and V. G. Mokerov p. 1480  abstract

Phenomenological Description of Dispersion of 8–60-nm-Thick Silicon Thin Films
into Drops on Al2O3 Inert Surface

A. A. Buzdugan, S. A. Gavrilov, D. G. Gromov, E. N. Redichev, and I. S. Chulkov p. 1487  abstract

Study of Properties of Nanoscale Lead Zirconate Titanate Films

V. M. Roshchin, V. B. Yakovlev, M. V. Silibin, and M. S. Lovyagina p. 1492  abstract

Carbon Nanomaterial Studied by Atomic-Force and Electron Microscopies

I. I. Bobrinetskiframe0, V. N. Kukin, V. K. Nevolin, and M. M. Simunin p. 1496  abstract

Effect of Te on the Self-Activated Emission of ZnSe

N. K. Morozova and D. A. Mideros p. 1499  abstract

Charge State Distribution in the a-Si:H Mobility Gap

A. A. Sherchenkov and A. B. Apal’kov p. 1503  abstract

Study of Model of Self-Coordinated Growth of Single Crystals of Sapphire
by Horizontal Directed Crystallization

S. P. Malyukov, B. A. Stefanovich, and D. I. Cherednichenko p. 1508  abstract

Effect of Treatment Technology for the Surface of Multicomponent Oxide Compounds
with Sillenite Structure on the Electron-Transition Kinetics in Surface Areas

A. N. Chaplygin, E. A. Spirin, and A. S. Sizov p. 1512  abstract


Microelectronics Technology

Charge State of Luminescence Centers in the Si–SiO2 Structures Subjected
to Sequential Implantation with Silicon and Carbon Ions

A. P. Baraban and Yu. V. Petrov p. 1515  abstract

Local Etching of Silicon Using a Solid Mask from Porous Aluminum Oxide

A. N. Belov p. 1519  abstract


Microelectronic Devices and Systems

Study of Thermal Effects and Self-Heating Phenomena in Planar Power SOI MOS Transistors

Yu. A. Chaplygin, E. A. Artamonova, A. Yu. Krasyukov, and T. Yu. Krupkina p. 1522  abstract

Simulation and Optimization of the CMOS Structure with Vertically Integrated
Single-Contact Photodetectors with Separation of Colors in the Visible Spectral Region

E. B. Volodin, E. A. Ignat’eva, and V. V. Uzdovskii p. 1527  abstract

Determination of the Charge Transport Mechanism in pn Junctions
by Analyzing Temperature Dependences of Forward Current–Voltage Characteristics

N. S. Grushko, A. V. Lakalin, and A. I. Somov p. 1532  abstract

Magnetically Controlled Two-Terminal Device with Negative Differential Resistance
and N-Type Current–Voltage Characteristic

Yu. A. Chaplygin, A. I. Galushkov, A. A. Semenov, and D. A. Usanov p. 1536  abstract

Intrinsic Noise Variation in an Amplifier Based on a Heterojunction Bipolar Transistor
Amplifier in Nonlinear Mode

A. M. Bobreshov, L. I. Averina, A. V. Khripushin, and D. A. Makarenko p. 1541  abstract

NRZ-to-NRZM Code Converter Based on Gallium-Arsenide
Heterojunction Bipolar Transistors

V. P. Timoshenkov and V. A. Bratov p. 1545  abstract


Nanotechnology

Texturing Problems in Nanotechnology: Texture Control

S. K. Maksimov and K. S. Maksimov p. 1552  abstract


Microsystems

Analysis of the Effect of Material Anisotropic Properties on the Eigenfrequency
of Ring Cavities of Micromechanical Gyroscopes

S. A. Zotov p. 1557  abstract

MOS Structures with Amorphous Tungsten Trioxide for Capacitive Humidity Sensors

E. A. Tutov p. 1561  abstract

Parameter Estimation Technique for Sensitive Elements
of Microaccelerometers and Micromirrors

S. P. Timoshenkov, A. N. Boframe1ko, and B. M. Simonov p. 1564  abstract


Measurement Techniques

The Use of the Photorefractive Effect for Comprehensive Three-Dimensional
Local Measurements of Electrical and Thermal Parameters of Silicon Structures

A. L. Filatov and A. V. Lugovskoframe2 p. 1569  abstract

Application of Inversion Voltammetry to Microimpurity Content Control
in Synthetic Sapphire

T. I. Khakhanina and A. A. Gurskaya p. 1573  abstract


Subject Index to Volume 42, 2008 p. 1577

Author Index to Volume 42, 2008 p. 1617


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