Vol. 55, No. 13, 2021

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Basic Research

Method for Predicting the Effective Conductivity of Textured Polycrystals Taking Intergranular Gaps into Consideration

I. V. Lavrov p. 1003 abstract

Spin Valves in Microelectronics (A Review)

Iu. A. Iusipova and A. I. Popov p. 1008 abstract

Electronics Materials

Prediction of the Effective Permittivity of Foam Polymer Materials

I. V. Lavrov, V. V. Bardushkin, V. B. Yakovlev and A. V. Bardushkin p. 1021 abstract

Effect of Fullerene Encapsulation on Optical and Thermoelectrical Properties of Carbon Nanotubes

E. V. Morozova and D. A. Timkaeva p. 1024 abstract

Prediction of Conditions for Chloride–Hydride Epitaxy of Ga_1 – yIn_yAs_1 – xP_x Layers Isoperiodic with GaAs and GaAs_1 – xP_x

E. N. Vigdorovich p. 1029 abstract

Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge₂Sb₂Te₅ Layers Grown on Si(111) Substrates

Yu. S. Zaytseva, N. I. Borgardt, A. S. Prikhodko, E. Zallo and R. Calarco p. 1033 abstract

Elements of Integrated Electronics

Normally-Off p-Gate Transistor Based on AlGaN/GaN Heterostructures

V. I. Egorkin, V. A. Bespalov, A. A. Zaitsev, V. E. Zemlyakov, V. V. Kapaev and O. B. Kukhtyaeva p. 1039 abstract

Analysis of Degradation Mechanisms of Gate Dielectrics Based on SiO₂ in MOS Transistors

D. A. Eliseeva and S. O. Safonov p. 1045 abstract

Investigation of the Dynamic Range of Silicon Photomultiplier Tubes

A. O. Zenevich and O. V. Kochergina p. 1049 abstract

Technological Processes and Routes

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

A. V. Afanasev, V. A. Ilyin, V. V. Luchinin and S. A. Reshanov p. 1055 abstract

Micro- and Nanosystem Technology

Study of the Sensitivity of Porous SnO₂-Based Thick-Film Elements to the Hydrogen Concentration in Air