Contents

Semiconductors

Vol. 54, No. 13, 2020

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Basic Research

Electronic Properties of Branched Molecular Structures Review

A. A. Gorbatsevich and M. N. Zhuravlev p. 1741  abstract

Possible enhancement of the modulation rate of light-emitting diodes in wireless optical data transfer networks by means of metal nanoparticles with a dielectric shell

D.V. Guzatov, S. V. Gaponenko and O.I. Tevel p. 1751  abstract

Electronics Materials

Forming Low-Resistance p-Type Layers in Ga1 – xAlxN/GaN Heterostructures

E. N. Vigdorovich p. 1757  abstract

Method of Determining the Elastic Characteristics of Graphene and Other 2D Nanoallotropes

R. A. Brazhe and D. A. Dolgov p. 1764  abstract

Plasmon-Acoustic Transducers Based on Graphene–2D Boron Nitride Structures for the Terahertz-Frequency Range

R. A. Brazhe and D. A. Dolgov p. 1770  abstract

Influence of the degree of crystallinity on the dispersion of the optical parameters of Ge2Sb2Te5 phase-change memory thin films

M. E. Fedyanina, P. I. Lazarenko, Yu. V. Vorobyov, S. A. Kozyukhin, A. A. Dedkova, A. O. Yakubov, V. S. Levitskii, I. V. Sagunova and A. A. Sherchenkov p. 1775  abstract

Technological Processes and Routes

On the Lateral Recrystallization of Amorphous Silicon Nanostructures Using Nickel Silicide

S. O. Belostotskaya, E. V. Kuznetsov, E. N. Rybachek and O. V. Gubanova p. 1784  abstract

Investigation of the Electrochemical Stop Etching of Silicon Upon the Fabrication of Cantilevers

A. V. Novak and V. R. Novak p. 1791  abstract

Elements of Integrated Electronics

On the photoresponse kinetics and amplitude of silicon photoelectric multipliers

M. A. Asayonok, A. O. Zenevich and E. V. Novikov p. 1796  abstract

Influence of the Formation Parameters of Phthalociane:Fullerene Nanocomposite Layer on the Photoelectric Characteristics of ZnPc:C60/C60 Structures

M. D. Pavlova, A. E. Degterev, I. A. Lamkin and S. A. Tarasov p. 1800  abstract

Correlation of Physical and Information Entropies in Reliability Theory for Nanoscale Elements

V. S. Kozhevnikov, I. V. Matyushkin, N. V. Chernyaev and T. D. Zhukova p. 1805  abstract