Contents

Semiconductors

Vol. 53, No. 13, 2019

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

First-Principles Investigation of Electronic Properties of GaAsxSb1 – x Ternary Alloys

A. K. Singh, Devesh Chandra, Sandhya Kattayat, Shalendra Kumar, P. A. Alvi and Amit Rathi p. 1731  abstract

Electron Mobility Calculation of Diluted III–V-Nitrides Alloys

K. Chakir, C. Bilel and A. Rebey p. 1740  abstract

Spectroscopy, Interaction with Radiation

Effect of Deposition Time on Structural, Morphological and Optical Properties of PVA Capped SnS Films Grown by CBD Process

P. Mallika Bramaramba Devi, G. Phaneendra Reddy and K. T. Ramakrishna Reddy p. 1745  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Microstructure and Optical Bandgap of Cobalt Selenide Nanofilms

Nader Ghobadi, Fatemeh Hafezi, Sirvan Naderi, Fatemeh Amiri, Carlos Luna, Ali Arman, Reza Shakoury, Ştefan Ţălu, Sahar Rezaee, Maryam Habibi and Mohsen Mardani p. 1751  abstract

Diameter Dependent Electronic, Optical and Transport Properties of CdSe Nanowire: Ab-Initio Study

Md. Shahzad Khan and Anurag Srivastava p. 1759  abstract

Mg-Doped ZnO and Zn-Doped MgO Semiconductor Nanoparticles; Synthesis and Catalytic, Optical and Electro-Optical Characterization

E. Parvizi, R. Tayebee and E. Koushki p. 1769  abstract

Physics of Semiconductor Devices

Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications

Nisha Chugh, Manoj Kumar, Monika Bhattacharya and R. S. Gupta p. 1784  abstract

Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells

Xin Chen, Bijun Zhao and Shuti Li p. 1792  abstract

Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation

Sapna Patel, Dushyant Kumar, Nitesh Kumar Chaurasiya and Shweta Tripathi p. 1797  abstract

Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs

Shrey Arvind Singh and Shweta Tripathi p. 1804  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Influence of Heat Treatments on the Properties of ZnO Nanorods Prepared by Hydrothermal Synthesis

Hyunggun Ma p. 1811  abstract

Thermoelectrics and Their Applications

Towards the Use of Cu–S Based Synthetic Minerals for Thermoelectric Applications

António Pereira Gonçalves and Elsa Branco Lopes p. 1817  abstract

Contacting Cu Electrodes to Mg2Si0.3Sn0.7: Direct vs. Indirect Resistive Heating

S. Ayachi, G. Castillo Hernandez, E. Müller and J. de Boor p. 1825  abstract

Hardness and Fracture Toughness of Solid Solutions of Mg2Si and Mg2Sn

Gustavo Castillo Hernandez, Mohammad Yasseri, Sahar Ayachi, Johannes de Boor and Eckhard Müller p. 1831  abstract

Effect of Spark Plasma Sintering Temperature on Thermoelectric Properties of Grained Bi1.9Gd0.1Te3 Compound

M. N. Yapryntsev, A. E. Vasil’ev, O. N. Ivanov and M. V. Zhezhu p. 1838  abstract

The Thermopower and Electron Mobility in Monophase Monocrystalline SmS in a Wide Temperature Range

V. V. Popov and N. N. Stepanov p. 1845  abstract

The Surface Preparation of Thermoelectric Materials for Deposition of Thin-Film Contact Systems

M. Yu. Shtern, I. S. Karavaev, Y. I. Shtern, A. O. Kozlov and M. S. Rogachev p. 1848  abstract

Magnetoresistance of Polycrystalline Ytterbium at Low Temperatures

G. A. Lenkov, A. E. Shitov, A. T. Burkov and M. P. Volkov p. 1853  abstract

Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds

A. I. Voronin, I. A. Serhiienko, Ye. Zh. Ashim, V. L. Kurichenko, A. P. Novitskii, T. M. Inerbaev, R. Umetsu and V. V. Khovaylo p. 1856  abstract

Topological Surface States of Multicomponent Thermoelectrics Based on Bismuth Telluride

L. N. Lukyanova, I. V. Makarenko, O. A. Usov and P. A. Dementev p. 1860  abstract