Vol. 50, No. 13, 2016

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Materials for Electronic Engineering

Improving the Functional Characteristics of Gallium Nitride during Vapor Phase Epitaxy

E. N. Vigdorovich p. 1697 abstract

Interaction of Electromagnetic Radiation with Magnetically Functionalized CNT Nanocomposite in the Subterahertz Frequency Range

A. Atdaev, A. L. Danilyuk, V. A. Labunov, S. L. Prischepa, A. A. Pavlov, A. S. Basaev and Yu. P. Shaman p. 1702 abstract

Methods of Accounting for Inclusion-Shape Randomness in Calculating the Effective Dielectric Characteristics of Heterogeneous Textured Materials

M. I. Zavgorodnyaya and I. V. Lavrov p. 1708 abstract

Method of Investigation of Galvanomagnetic Properties of Cd_xHg_1 − xTe and Cd_xHg_1 − xTe/Cd_1 − yZn_yTe

V. A. Golubyatnikov, A. P. Lysenko, A. G. Belov and V. E. Kanevskii p. 1716 abstract

Microelectronic and Nanoelectronic Technology

Effect of Ionic Ag⁺ Transfer on Localization of Metal-Assisted Etching of Silicon Surface

O. V. Pyatilova, A. V. Sysa, S. A. Gavrilov, L. V. Yakimova, A. A. Pavlov, A. N. Belov and A. A. Raskin p. 1720 abstract

Formation of Field-Emission Emitters by Microwave Plasma-Chemical Synthesis of Nanocarbon Structures

R. K. Yafarov, E. S. Gornev, S. N. Orlov, S. P. Timoshenkov, V. P. Timoshenkov and A. S. Timoshenkov p. 1726 abstract

Microelectronic Devices and Systems

Methods for Suppressing Optical Crosstalk between the Cells of a Silicon Photomultiplier Array

A. A. Zhukov, E. V. Popova and N. N. Gerasimenko p. 1729 abstract

The Effect of the Electron–Phonon Interaction on Reverse Currents of GaAs-Based p–n Junctions

A. V. Zhukov p. 1734 abstract

Nanotechnology

Surface Functionalization of Single-Layer and Multilayer Graphene upon Ultraviolet Irradiation

D. D. Levin, I. I. Bobrinetskiy, A. V. Emelianov, V. K. Nevolin, A. V. Romashkin and V. A. Petuhov p. 1738 abstract

Nanostructured Current Sources Based on Carbon Nanotubes Excited by β Radiation

A. N. Saurov, S. V. Bulyarskiy, V. D. Risovaniy, A. A. Pavlov, I. E. Abanin, E. P. Kitsyuk, A. A. Shamanaev and E. A. Lebedev p. 1744 abstract

Formation of Carbon Nanotubes on an Amorphous Ni₂₅Ta₅₈N₁₇ Alloy Film by Chemical Vapor Deposition

D. G. Gromov, S. V. Dubkov, A. A. Pavlov, S. N. Skorik, A. Yu. Trifonov, E. P. Kirilenko, A. S. Shulyat’ev, Yu. P. Shaman and B. N. Rygalin p. 1748 abstract

Methods and Technique of Measurements

Study of the Structure and Composition of the Strained Epitaxial Layer in the InAlAs/GaAs(100) Heterostructure by Transmission Electron Microscopy

M. V. Lovygin, N. I. Borgardt, A. S. Bugaev, R. L. Volkov and M. Seibt p. 1753 abstract

Measurements of Electrophysical Characteristics of Semiconductor Structures with the Use of Microwave Photonic Crystals