Contents
Semiconductors
Vol. 47, No. 13, 2013
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Basic Research
Three Types of Self-Activated Luminescence Centers in CdS:O
N. K. Morozova, N. D. Danilevich, V. I. Oleshko, and S. S. Vilchinskaya p. 1661 abstract
Effective Conductivity of a Polycrystalline Medium with Weak Macroscopic Anisotropy
I. V. Lavrov p. 1667 abstract
Features of the Interaction of Ring Chiral Media with Electromagnetic Radiation
of the Centimeter and Decimeter Ranges
I. V. Voronin, S. A. Gorbatov, O. A. Dyakonova, and V. Yu. Naumenko p. 1674 abstract
Phase Separation in Chalcogenide Semiconductors
of the GeTe System upon Thermal Cycling
S. A. Kozyukhin, A. A. Sherchenkov, and A. V. Babich p. 1680 abstract
Materials for Electronic Engineering
Growth of Nanocrystalline Silicon from a Matrix of Amorphous Silicon Monoxide
B. G. Gribov, K. V. Zinovev, O. N. Kalashnik, N. N. Gerasimenko,
D. I. Smirnov, and V. N. Sukhanov p. 1684 abstract
Effect of the Formation Conditions on the Properties of ZnO:Ga Thin Films Deposited
by Magnetron-Assisted Sputtering onto a Cold Substrate
D. G. Gromov, A. M. Kozmin, A. S. Shulyatev, S. A. Polomoshnov,
D. N. Bogolyubova, and S. V. Shamanaev p. 1687 abstract
Nanotechnology
Procedure for Calculating the Field-Emission Current from a Single Carbon Nanotube
S. V. Bulyarskii, A. V. Lakalin, and A. S. Basaev p. 1692 abstract
Formation of Nickel Clusters for the Growth of Carbon Nanotubes
V. I. Egorkin, A. A. Zaitsev, V. K. Nevolin, and M. M. Simunin p. 1697 abstract
On the Atomic-Force Microscopy of Biological Nanoparticles in Air
I. I. Bobrinetskii, R. A. Morozov, and E. Yu. Chaplygin p. 1699 abstract
Specific Features of the Structure and Properties of Carbon Nanocolumns Formed
by Low-Temperature Chemical Vapor Deposition
D. G. Gromov, N. I. Borgardt, R. L. Volkov, V. A. Galperin, Ya. S. Grishina, and S. V. Dubkov p. 1703 abstract
Effect of the Activity of Fluorine-Containing Electrolytes on Reaching
the Maximum Thickness of Porous Anodic Titanium Oxide
A. N. Belov, I. M. Gavrilin, S. A. Gavrilov, A. A. Dronov, and V. A. Labunov p. 1707 abstract
Methods and Technique of Measurements
Diagnostics of -Irradiated SiSiO2 Structures by the Cathodoluminescence Method
A. P. Baraban, V. A. Dmitriev, Yu. V. Petrov, and K. A. Timofeeva p. 1711 abstract
Measurement of the Mobility and Concentration of Charge Carriers
in a Gunn Gallium-Arsenide Diode Using a Near-Field Microwave Microscope
D. A. Usanov, S. S. Gorbatov, and V. Yu. Kvasko p. 1715 abstract
Controlling the Temporal Instability of the Dielectric Parameters of Ferroelectrics
E. A. Pecherskaya, V. A. Solovev, A. M. Metalnikov, Yu. A. Varenik,
I. M. Gladkov, and D. V. Ryabov p.1720 abstract
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