Contents
Semiconductors


Vol. 44, No. 13, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Basic Research

On the Theory of Love Waves in Heterostructures with Hexagonal Symmetry

A. K. Morocha p. 1625  abstract


Materials for Electronic Engineering

Simulation and Calculation of the Piezoelectric Modulus
of a Lead Zirconate–Titanate Thin Film in a Test Microstructure

V. V. Amelichev, D. A. Saikin, V. M. Roshchin, and M. V. Silibin p. 1631  abstract

Brightness–Voltage Characteristics of ZnS:Mn Luminescent Films

M. K. Samokhvalov and M. O. Takhtenkova p. 1634  abstract


Microelectronics Technology

Model of Thermal Oxidation of Silicon with Diffusion Coefficient Relaxation

O. V. Aleksandrov and A. I. Dus’ p. 1637  abstract

A Study of Vapor-Phase Deposition of Silicon Nitride Layers
by Ammonolysis of Dichlorosilane at Lowered Pressure

N. M. Manzha p. 1644  abstract

The Influence of Solution–Precursors on Optical Properties of In2S3 Films Deposited
by Successive Ionic Layer Adsorption and Reaction

S. A. Gavrilov, A. V. Zheleznyakova, E. N. Redichev, and N. I. Popenko p. 1649  abstract

Reversible High-Speed Electrostatic “Contact”

I. L. Baginsky and E. G. Kostsov p. 1654  abstract


Microelectronic Devices and Systems

Determination of Parameters of a Nonlinear Model
of GaAs High-Power MESFET Field Transistors

S. A. Bakhvalova p. 1658  abstract

Degradation of Integrated Schmitt Triggers of the CMOS Logic
under the Effect of Ultrashort Pulsed Overloads

A. M. Bobreshov, A. V. Dyboi, Yu. Yu. Razuvaev, and G. K. Uskov p. 1662  abstract

High-Power Microwave LDMOS Transistors
for Wireless Data Transmission Technologies (Review)

E. V. Kuznetsov and A. V. Shemyakin p. 1669  abstract

Monitoring of the Current-Distribution Uniformity in Bipolar Transistors
from the Dependence of Internal-Feedback Factor on Collector Voltage

V. A. Sergeev, O. A. Dulov, and A. A. Kulikov p. 1675  abstract

Simulation of Electrical Parameters of Channels
of Silicon MOS Transistors on a Deformed Substrate

V. V. Filippov, B. K. Petrov, and Yu. M. Myasnyankin p.1680  abstract

Waveguide Photonic Crystals with Characteristics Controlled with pin Diodes

D. A. Usanov, A. V. Skripal, A. V. Abramov, A. S. Bogolyubov,
V. S. Skvortsov, and M. K. Merdanov
p. 1685  abstract

Analysis of Thermal Processes in Piezoceramic Actuator

A. V. Dobrynin, T. V. Kharitonova, and V. K. Kazakov p. 1689  abstract


Nanotechnology

Formation and Atomic Force Spectroscopy of AlGaN/GaN Nanoheterostructures

K. A. Tsarik and V. K. Nevolin p. 1694  abstract

Radiation Effects in Nanoelectronic Elements

D. V. Gromov, V. V. Elesin, G. V. Petrov, I. I. Bobrinetskii, and V. K. Nevolin p. 1699  abstract

Photoactivation of the Processes of Formation of Nanostructures
by Local Anodic Oxidation of a Titanium Film

O. A. Ageev, N. I. Alyab’eva, B. G. Konoplev, V. V. Polyakov, and V. A. Smirnov p. 1703  abstract

Kinetics of Local Probe Oxidation of Ultrathin V, Nb, Ta, Ti, TiN, and W Metal Films

I. V. Sagunova, V. I. Shevyakov, S. A. Gavrilov, and A. N. Belov p. 1709  abstract

Fabrication of Nanosized Superconductor Structures
with a Critical Temperature Exceeding 100 K

Yu. E. Grigorashvili, A. V. Bukhlin, and I. V. Veryuzhskii p. 1714  abstract

Thermodynamics of the Formation of Catalyst Clusters for Carbon Nanotube Growth

S. V. Bulyarskii, O. V. Pyatilova, A. V. Tsygantsov, A. S. Basaev, V. A. Galperin,
A. A. Pavlov, and Yu. P. Shaman
p. 1718  abstract


Measurement Techniques

Specific Features of Implementation of the Photoconductivity Decay Method
in Measurements of Recombination Parameters of a Semiconductor

M. B. Shadov p. 1723  abstract

Application of Short Light Pulses for Measuring Parameters of Solar Cells

A. F. Yaremchuk, A. V. Alekseev, and A. V. Korotkevich p. 1727  abstract


Author Index to Volume 44, 2010 p.1731


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