Contents
Semiconductors
Vol. 44, No. 13, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Basic Research
On the Theory of Love Waves in Heterostructures with Hexagonal Symmetry
A. K. Morocha p. 1625 abstract
Materials for Electronic Engineering
Simulation and Calculation of the Piezoelectric Modulus
of a Lead ZirconateTitanate Thin Film in a Test Microstructure
V. V. Amelichev, D. A. Saikin, V. M. Roshchin, and M. V. Silibin p. 1631 abstract
BrightnessVoltage Characteristics of ZnS:Mn Luminescent Films
M. K. Samokhvalov and M. O. Takhtenkova p. 1634 abstract
Microelectronics Technology
Model of Thermal Oxidation of Silicon with Diffusion Coefficient Relaxation
O. V. Aleksandrov and A. I. Dus p. 1637 abstract
A Study of Vapor-Phase Deposition of Silicon Nitride Layers
by Ammonolysis of Dichlorosilane at Lowered Pressure
N. M. Manzha p. 1644 abstract
The Influence of SolutionPrecursors on Optical Properties of In2S3 Films Deposited
by Successive Ionic Layer Adsorption and Reaction
S. A. Gavrilov, A. V. Zheleznyakova, E. N. Redichev, and N. I. Popenko p. 1649 abstract
Reversible High-Speed Electrostatic Contact
I. L. Baginsky and E. G. Kostsov p. 1654 abstract
Microelectronic Devices and Systems
Determination of Parameters of a Nonlinear Model
of GaAs High-Power MESFET Field Transistors
S. A. Bakhvalova p. 1658 abstract
Degradation of Integrated Schmitt Triggers of the CMOS Logic
under the Effect of Ultrashort Pulsed Overloads
A. M. Bobreshov, A. V. Dyboi, Yu. Yu. Razuvaev, and G. K. Uskov p. 1662 abstract
High-Power Microwave LDMOS Transistors
for Wireless Data Transmission Technologies (Review)
E. V. Kuznetsov and A. V. Shemyakin p. 1669 abstract
Monitoring of the Current-Distribution Uniformity in Bipolar Transistors
from the Dependence of Internal-Feedback Factor on Collector Voltage
V. A. Sergeev, O. A. Dulov, and A. A. Kulikov p. 1675 abstract
Simulation of Electrical Parameters of Channels
of Silicon MOS Transistors on a Deformed Substrate
V. V. Filippov, B. K. Petrov, and Yu. M. Myasnyankin p.1680 abstract
Waveguide Photonic Crystals with Characteristics Controlled with pin Diodes
D. A. Usanov, A. V. Skripal, A. V. Abramov, A. S. Bogolyubov,
V. S. Skvortsov, and M. K. Merdanov p. 1685 abstract
Analysis of Thermal Processes in Piezoceramic Actuator
A. V. Dobrynin, T. V. Kharitonova, and V. K. Kazakov p. 1689 abstract
Nanotechnology
Formation and Atomic Force Spectroscopy of AlGaN/GaN Nanoheterostructures
K. A. Tsarik and V. K. Nevolin p. 1694 abstract
Radiation Effects in Nanoelectronic Elements
D. V. Gromov, V. V. Elesin, G. V. Petrov, I. I. Bobrinetskii, and V. K. Nevolin p. 1699 abstract
Photoactivation of the Processes of Formation of Nanostructures
by Local Anodic Oxidation of a Titanium Film
O. A. Ageev, N. I. Alyabeva, B. G. Konoplev, V. V. Polyakov, and V. A. Smirnov p. 1703 abstract
Kinetics of Local Probe Oxidation of Ultrathin V, Nb, Ta, Ti, TiN, and W Metal Films
I. V. Sagunova, V. I. Shevyakov, S. A. Gavrilov, and A. N. Belov p. 1709 abstract
Fabrication of Nanosized Superconductor Structures
with a Critical Temperature Exceeding 100 K
Yu. E. Grigorashvili, A. V. Bukhlin, and I. V. Veryuzhskii p. 1714 abstract
Thermodynamics of the Formation of Catalyst Clusters for Carbon Nanotube Growth
S. V. Bulyarskii, O. V. Pyatilova, A. V. Tsygantsov, A. S. Basaev, V. A. Galperin,
A. A. Pavlov, and Yu. P. Shaman p. 1718 abstract
Measurement Techniques
Specific Features of Implementation of the Photoconductivity Decay Method
in Measurements of Recombination Parameters of a Semiconductor
M. B. Shadov p. 1723 abstract
Application of Short Light Pulses for Measuring Parameters of Solar Cells
A. F. Yaremchuk, A. V. Alekseev, and A. V. Korotkevich p. 1727 abstract
Author Index to Volume 44, 2010
p.1731
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