Contents
Semiconductors

Vol. 39, No. 12, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Electronic and Optical Properties of Semiconductors

Electroluminescence of Graded-gap Structures with Blocking and Ohmic Contacts

B. S. Sokolovski, V. I. Ivanov-Omski, and G. A. Il’chuk p. 1361  abstract

Mössbauer Study of the Ge Two-Electron Donor Centers in PbSe

E. I. Terukov and É. S. Khuzhakulov p. 1369  abstract

Electron Exchange between Neutral and Ionized Germanium Centers in PbSe

E. I. Terukov and É. S. Khuzhakulov p. 1371  abstract

Characterization of Photonic Crystals Based on Opal–Semiconductor Composites
by Bragg Reflection Spectroscopy

G. M. Gadzhiev, V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov,
A. V. Sel’kin, and V. V. Travnikov p. 1374  abstract

Semiconductor Structures, Interfaces, and Surfaces

On the Effect of Transverse Quantum Confinement on the Electrical Characteristics
of a Submicrometer-Sized Tunnel MOS Structure

M. I. Vexler, I. V. Grekhov, and A. F. Shulekin p. 1381  abstract

Simulation of the Capacitance–Voltage Characteristics of a Ferroelectric Material

L. S. Berman p. 1387  abstract

Estimation of the Energy Characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC Heterojunctions

S. Yu. Davydov, A. A. Lebedev, and O. V. Posrednik p. 1391  abstract

Measurement of Micrometer Diffusion Lengths by Nuclear Spectrometry

N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syväjärvi, and R. Yakimova p. 1394  abstract

Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy:
High-Resolution Photoluminescence Spectroscopy

D. I. Kryzhkov, N. A. Sobolev, B. A. Andreev, D. V. Denisov, Z. F. Krasil’nik, and E. I. Shek p. 1399  abstract

Electrical Properties of n-GaN/p-SiC Heterojunctions

O. Yu. Ledyaev, A. M. Strel’chuk, A. N. Kuznetsov, N. V. Seredova, A. S. Zubrilov,
A. A. Volkova, A. E. Nikolaev, and A. A. Lebedev p. 1403  abstract

Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se₂ Heterostructures
and Exposed to -ray Radiation

V. V. Emtsev, Yu. A. Nikolaev, D. S. Poloskin, V. Yu. Rud’, Yu. V. Rud’,
E. I. Terukov, and M. V. Yakushev p. 1406  abstract

Low-Dimensional Systems

The Tail of Localized States in the Band Gap of the Quantum Well
in the In_0.2Ga_0.8N/GaN System and Its Effect on the Laser-Excited Photoluminescence Spectrum

M. A. Jacobson, D. K. Nelson, O. V. Konstantinov, and A. V. Matveentsev p. 1410  abstract

Physics of Semiconductor Devices

Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers
for the 1.5-m Spectral Region

L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov,
N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil’ev, V. M. Ustinov, N. N. Ledentsov,
A. R. Kovsh, V. A. Shchukin, S. S. Mikhrin, A. Lochmann, O. Schulz, L. Reissmann, and D. Bimberg p. 1415  abstract

The Limiting Energy Resolution of SiC Detectors in Ion Spectrometry

N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syväjärvi, and R. Yakimova p. 1420  abstract

“Ideal” Static Breakdown in High-Voltage (1 kV) 4H-SiC p–n Junction Diodes
with Guard Ring Termination

P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, and T. P. Samsonova p. 1426  abstract

Personalia

Yuri Vasil’evich Shmartsev (On the 75th Anniversary of His Birth) p. 1429

Boris Vasil’evich Tsarenkov (On the 75th Anniversary of His Birth) p. 1431

Subject Index to Volume 39, 2005 p. 1433

Author Index to Volume 39, 2005 p. 1464

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