Contents
Semiconductors

Vol. 37, No. 12, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Redistribution of Ytterbium and Oxygen in Annealing
of Silicon Layers Amorphized by Implantation

O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev, R. Asomoza, Yu. Kudriavtsev,
A. Villegas, and A. Godines p. 1363  abstract

Electronic and Optical Properties of Semiconductors

Two-Electron Tin Centers Formed in Lead Chalcogenides as a Result of Nuclear Transmutations

S. A. Nemov, P. P. Seregin, Yu. V. Kozhanova, and N. P. Seregin p. 1367  abstract

Specific Features of Conductivity of Cd_1–xZn_xTe and Cd_1–xMn_xTe Single Crystals

L. A. Kosyachenko, A. V. Markov, E. L. Maslyanchuk, I. M. Rarenko, and V. M. Sklyarchuk p. 1373  abstract

Photoluminescence at 1.5 m from Single-Crystal Silicon Layers Subjected
to Mechanical Treatment

R. I. Batalov, R. M. Bayazitov, B. A. Andreev, D. I. Kryzhkov,
E. I. Terukov, and V. Kh. Kudoyarova p. 1380  abstract

Semiconductor Structures, Interfaces, and Surfaces

Investigation of the ZnS–CdHgTe Interface

P. V. Biryulin, S. A. Dudko, S. A. Konovalov, Yu. A. Pelevin, and V. I. Turinov p. 1383  abstract

Mechanisms of Photocurrent Generation in In₂O₃–InSe Heterojunctions

V. P. Makhniy and O. I. Yanchuk p. 1387  abstract

Low-Dimensional Systems

Spin Depolarization in Spontaneously Polarized Low-Dimensional Systems

I. A. Shelykh, N. T. Bagraev, and L. E. Klyachkin p. 1390  abstract

Fabrication and Optical Properties of Photonic Crystals Based on Opal–GaP
and Opal–GaPN Composites

G. M. Gadzhiev, V. G. Golubev, M. V. Zamoryanskaya, D. A. Kurdyukov,
A. V. Medvedev, J. Merz, A. Mintairov, A. B. Pevtsov, A. V. Sel’kin,
V. V. Travnikov, and N. V. Sharenkova p. 1400  abstract

Room-Temperature 1.5–1.6 m Photoluminescence from InGaAs/GaAs
Heterostructures Grown at Low Substrate Temperature

A. A. Tonkikh, G. E. Tsyrlin, V. G. Talalaev, B. V. Novikov, V. A. Egorov,
N. K. Polyakov, Yu. B. Samsonenko, V. M. Ustinov, N. D. Zakharov, and P. Werner p. 1406  abstract

Lasing at 1.5 m in Quantum Dot Structures on GaAs Substrates

A. E. Zhukov, A. P. Vasil’yev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, A. Yu. Egorov,
V. A. Odnoblyudov, N. A. Maleev, E. V. Nikitina, N. V. Kryjanovskaya, A. G. Gladyshev,
Yu. M. Shernyakov, M. V. Maximov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov p. 1411  abstract

Physics of Semiconductor Devices

Properties of GaSb-Based Light-Emitting Diodes with Chemically Cut Substrates

E. A. Grebenshchikova, A. N. Imenkov, B. E. Zhurtanov, T. N. Danilova,
A. V. Chernyaev, N. V. Vlasenko, and Yu. P. Yakovlev p. 1414  abstract

MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm

D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetski,
D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, N. V. Fetisova,
V. V. Shamakhov, and I. S. Tarasov p. 1421  abstract

Picosecond High-Voltage Drift Diodes Based on Gallium Arsenide

A. V. Rozhkov and V. A. Kozlov p. 1425  abstract

Impact-Ionization Wave Breakdown and Generation of Picosecond Pulses
in the Ultrahigh-Frequency Band in GaAs Drift Step-Recovery Diodes

V. A. Kozlov, A. V. Rozhkov, and A. F. Kardo-Sysoev p. 1428  abstract

Personalia

Vladimir Idelevich Perel’ (On His 75th Birthday) p. 1430

Subject Index to Volume 37, 2003 p. 1431

Author Index to Volume 37, 2003 p. 1453

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