Contents
Semiconductors

Vol. 36, No. 12, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Influence of Segregation on the Composition of GaAs_1–xSb_x Solid Solutions Grown
by Liquid-Phase Epitaxy

Yu. F. Biryulin p. 1323  abstract

Electronic and Optical Properties of Semiconductors

Temperature Dependence of the Width of the Deep-Level Band in Silicon
with a High Concentration of Defects

J. Partyka, P. W. ukowski, P. Wgierek, A. Rodzik, Yu. V. Sidorenko,
and Yu. A. Shostak p. 1326  abstract

The Mechanisms of Hole Scattering in p-Hg_0.8Cd_0.2Te Crystals at Low Temperatures

V. V. Bogoboyashchi p. 1332  abstract

A DLTS Study of Deep Levels in the Band Gap of Textured Stoichiometric
p-CdTe Polycrystals

E. A. Bobrova, Yu. V. Klevkov, S. A. Medvedev, and A. F. Plotnikov p. 1341  abstract

Electron Spin Resonance in Cd_1–xMn_xTe and Zn_1–xMn_xTe Compounds

J. Partyka, P. W. ukowski, P. Wgierek, A. Rodzik, Yu. V. Sidorenko,
and Yu. A. Shostak p. 1347  abstract

Semiconductor Structures, Interfaces, and Surfaces

Deep Levels in the Band Gap of GaN Layers Irradiated with Protons

M. M. Sobolev, N. A. Sobolev, A. S. Usikov, N. M. Shmidt, A. N. Yakimenko,
G. M. Gusinski, and V. O. Nadenov p. 1352  abstract

Band-Edge Line-up in GaAs/GaAsN/InGaAs Heterostructures

A. Yu. Egorov, V. A. Odnoblyudov, N. V. Krizhanovskaya,
V. V. Mamutin, and V. M. Ustinov p. 1355  abstract

Low-Dimensional Systems

Analysis of Inelastic Scattering of Quasi-Two-Dimensional Electrons of a Superlattice
by Acoustic Phonons with Allowance Made for the Miniband Dispersion

S. I. Borisenko p. 1360  abstract

Damping of Bloch Oscillations in Quantum Dot Superlattices: A General Approach

I. A. Dmitriev and R. A. Suris p. 1364  abstract

Damping of Bloch Oscillations in One-, Two-, and Three-Dimensional
Quantum-Dot Superlattices

I. A. Dmitriev and R. A. Suris p. 1375  abstract

MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells

V. A. Solov’ev, Ya. V. Terent’ev, A. A. Toropov, B. Ya. Meltser, A. N. Semenov,
A. A. Sitnikova, S. V. Ivanov, J. R. Meyer, and P. S. Kop’ev p. 1385  abstract

Weak Antilocalization and Spin–Orbit Interaction in a In_0.53Ga_0.47As/InP
Quantum Well in the Persistent Photoconductivity State

D. D. Bykanov, S. V. Novikov, T. A. Polyanskaya, and I. G. Savel’ev p. 1389  abstract

Physics of Semiconductor Devices

Isotope-Pure ²⁸Si Layers Grown by VPE

O. N. Godisov, A. K. Kaliteevsky, A. Yu. Safronov, V. I. Korolev, P. N. Aruev,
B. Ya. Ber, V. Yu. Davydov, N. V. Zabrodskaya, V. V. Zabrodsky, M. A. Kaliteevsky,
P. S. Kop’ev, A. P. Kovarsky, and V. L. Sukhanov p. 1398  abstract

Isotope-Pure Silicon Layers Grown by MBE

O. N. Godisov, A. K. Kaliteevsky, A. Yu. Safronov, V. I. Korolev, B. Ya. Ber,
V. Yu. Davydov, D. V. Denisov, M. A. Kaliteevsky, P. S. Kop’ev, A. P. Kovarsky,
V. M. Ustinov, and H.-J. Pohl p. 1400  abstract

Subject Index to Volume 36, 2002 p. 1403

Author Index to Volume 36, 2002 p. 1425

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.