Contents

Semiconductors

Vol. 59, No. 12, 2025

Modeling and Analysis of Temperature-Dependent I–V Characteristics in Ti/6H-SiC Schottky Diodes

Abderrahmane Bekaddour, Baya Zebentout, Abdelaziz Rabehi, Schahrazade Tizi, Boudali Akkal, Mohamed Benghanem, and Zineb Benamara p. 1247  abstract

Design and Performance Study of 1.65 μm AlGaInAs/InP Symmetric Multi-Quantum Well Semiconductor Laser Epitaxial Structure

Weichen Geng, Yuan Feng, Wei Zhu, and Lijun Guo p. 1260  abstract

High-Performance BGaN/GaN HEMT Design with Si3N4 Passivation for RF and Microwave Applications

P. Harikrishnan and B. Mohan p. 1266  abstract

Design and Test of a 3-Terminal Work-Function Engineered Universal Gate and Modelling of Its Static Performance Metrics

Arun Kumar Sinha and Sri Lakshmi Sangam p. 1279  abstract

Performance Enhancement of T-gated GaN HEMTs Using Polarization-Graded AlGaN Back Barrier for High-Frequency Applications

B. Mohan, J. Charles Pravin, and V. Sandeep p. 1288  abstract

Performance Study of Sub-5 nm FinFET and GAA Structures at Low Temperature

Bhubesh Chander Joshi and Ajeet Kumar p. 1303  abstract

Comparative Analysis of the Commonly used Electron Transporting Layers in High Efficiency Perovskite Solar Cells

Divya Sharma, Rajesh Mehra, and Balwinder Raj p. 1316  abstract

Enhancing Breakdown Voltage and Switching Performance in AlGaN/GaN HEMTs via GaN Cap and Field Plate Co-Design

Ellapu Bhanu Prakash, Anil Prasad Dadi, Vijay Maitra, Tathagata Ghose, Pranjal Barman, Ashok Ray, and Sushanta Bordoloi p. 1328  abstract

Vigorous Energy Gaps in Organic Semiconductors

Xuehua Zhou, Jia Wang, Shixing Yang, Yu Zhong, and Chao Han p. 1343  abstract

Low-Power Analog and RF Performance Analysis of a Nanowire Junctionless TFET with Dual-Metal-Insulator-Semiconductor (DMIS) Structure for Communication Systems

Lucky Agarwal, Lakshmi Priya G., and Ranjith Kumar T. p. 1356  abstract