Vol. 55, No. 12, 2021

Semiconductors

Features of the Damping and Amplification of Terahertz Plasmon Eigenmodes in Graphene Taking the Spatial Dispersion into Account

O. V. Polischuk, D.V. Fateev and V. V. Popov p. 875 abstract

Quantitative Analysis of Valley–Orbit Coupling in Germanium Doped with Group-V Donors

A. A. Revin, A. M. Mikhaylova, A. A. Konakov, V. V. Tsyplenkov and V. N. Shastin p. 879 abstract

Silicon Metal–Oxide–Semiconductor Transistor with a Dependent Pocket Contact and Two-Layer Polysilicon Gate

T. A. Shobolova, A. S. Mokeev, S. D. Rudakov, S. V. Obolensky and E. L. Shobolov p. 885 abstract

Effect of Additional Implantation with Oxygen Ions on the Dislocation-related Luminescence in Silicon-containing Oxygen Precipitates

N. A. Sobolev, A. E. Kalyadin, K. F. Shtel’makh and E. I. Shek p. 891 abstract

Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs

E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolensky and V. E. Zemlyakov p. 895 abstract

Effect of Internal Optical Losses on the Generation of Mid-IR Stimulated Emission in Waveguide Heterostructures with HgCdTe/CdHgTe Quantum Wells

V. V. Utochkin, A. A. Dubinov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko and S. V. Morozov p. 899 abstract

Experimental Studies of Modification of the Characteristics of GaAs Structures with Schottky Contacts after Exposure to Fast Neutrons

E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, E. S. Semyonovykh, S. V. Khazanova and S. V. Obolensky p. 903 abstract

Calculation of the Temperature Dependence of the Coulomb-Acceptor State Energy in a Narrow-Gap HgCdTe Solid Solution

M. S. Zholudev, V. V. Rumyantsev and S. V. Morozov p. 907 abstract

Impact of (Pr, Dy) Co-doping at Bi Site on Optical and Multiferroic Properties of BiFeO₃ Ceramics Prepared by Sonochemical Method

A. Bismibanu, Pradeep Reddy Vanga, M. Alagar, Thangaraj Selvalakshmi, I. B. Shameem Banu and M. Ashok p. 914 abstract

Effect of Absorber Layer Thickness on the Performance of Bismuth-Based Perovskite Solar Cells

U. C. Obi, D. M. Sanni and A. Bello p. 922 abstract

On the band gap of AgSbSe₂

S. S. Ragimov, V. E. Bagiev, A. I. Alieva and A. A. Saddinova p. 928 abstract

Performance Evaluation of Inversion Mode and Junctionless Dual-Material Double-Surrounding Gate Si Nanotube MOSFET for 5-nm Gate Length

Sanjay, B. Prasad and A. Vohra p. 936 abstract

Character of Interaction in the SnSb₂Te₄–SnBi₂Te₄ System and the Thermoelectric Properties of (SnSb₂Te₄)_{1 –} _x(SnBi₂Te₄)_x Solid Solutions

G. R. Gurbanov and M. B. Adygezalova p. 943 abstract

Microstructural and Electronic Properties of Rapid Thermally Grown MoS₂|Silicon Hetero-Junctions with Various Process Parameters

D. Pradhan and J. P. Kar p. 948 abstract

Calculation of Lattice Thermal Conductivity for Si Fishbone Nanowire Using Modified Callaway Model

I. N. Qader, H. M. Qadr and P. H. Ali p. 960 abstract

Optical Properties of the Ge₁₄Sb₂₉Te₅₇ and Ge₁₅Sb₁₅Te₇₀ Phase-Change Materials in the Far-Infrared Range

V. A. Ryzhov, B. T. Melekh and L. P. Kazakova p. 968 abstract

Ag Doping Effects on the Microstructure, Morphology, Optical, and Luminescence Properties of Sol–Gel-Deposited ZnO Thin Films

M. Atoui, S. Benzeghda, T. Touam, A. Chelouche and D. Djouadi p. 976 abstract

Ellipsometric Studies of the Optical Properties of Bi₂Se₃ and Bi₂Se₃〈Cu〉 Single Crystals

Sh. K. Qudavasov, N. A. Abdullayev, J. N. Jalilli, Z. I. Badalova, I. A. Mamedova and S. A. Nemov p. 985 abstract

Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer

A. A. Semakova, A. M. Smirnov, N. L. Bazhenov, K. D. Mynbaev, A. A. Pivovarova, A. V. Chernyaev, S. S. Kizhaev and N. D. Stoyanov p. 989 abstract

Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy

P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Lenshin, Yu. Yu. Khudyakov, I. N. Arsentiev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin and Tatiana Prutskij p. 995 abstract

Contents

Semiconductors