Vol. 53, No. 12, 2019

Semiconductors

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy

R. V. Levin, A. S. Vlasov, A. N. Smirnov and B. V. Pushnyi p. 1563 abstract

Electronic Properties of Semiconductors

Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs

A. A. Lebedev, M. E. Levinshtein, P. A. Ivanov, V. V. Kozlovski, A. M. Strel’chuk, E. I. Shabunina and L. Fursin p. 1568 abstract

Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures

T. T. Muratov p. 1573 abstract

On the Characteristic Features of the Impurity Energy Spectrum in Arsenides

I. K. Kamiliov, M. I. Daunov, G. M. Gajiev and R. K. Arslanov p. 1578 abstract

First-Principles Investigation of Electronic Properties of GaAs_xSb_{1 –} _x Ternary Alloys

A. K. Singh, Devesh Chandra, Sandhya Kattayat, Shalendra Kumar, P. A. Alvi and Amit Rathi p. 1584 abstract

Temperature Dependence of the Band Gap of MnAgIn₇S₁₂ Single Crystals

I. V. Bodnar, B. T. Chan, V. N. Pavlovskii, I. E. Svitsiankou and G. P. Yablonskii p. 1593 abstract

Surfaces, Interfaces, and Thin Films

Features of the Temperature Dependences of the Photoconductivity of Organometallic CH₃NH₃PbI₃ Perovskite Films

D. V. Amasev, A. R. Tameev and A. G. Kazanskii p. 1597 abstract

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO₂ Thin Films

S. Asalzadeh and K. Yasserian p. 1603 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors

V. S. Krivobok, D. A. Litvinov, S. N. Nikolaev, E. E. Onishchenko, D. A. Pashkeev, M. A. Chernopittsky and L. N. Grigor’eva p. 1608 abstract

Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials

A. Yu. Maslov and O. V. Proshina p. 1617 abstract

Carbon Nanotubes and Graphene Powder based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors

Muhammad Tariq Saeed Chani, Khasan S. Karimov and Abdullah M. Asiri p. 1622 abstract

De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States

V. V. Romanov, V. A. Kozhevnikov, C. T. Tracey and N. T. Bagraev p. 1629 abstract

Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States

V. V. Romanov, V. A. Kozhevnikov and N. T. Bagraev p. 1633 abstract

Amorphous, Vitreous, and Organic Semiconductors

Effect of the Samarium Impurity on the Local Structure of Se₉₅Te₅ Chalcogenide Glassy Semiconductor and Current Passage through Al–Se₉₅Te₅〈Sm〉–Te Structures

S. U. Ataeva, S. I. Mekhtieva, A. I. Isaev, S. N. Garibova and A. S. Huseynova p. 1637 abstract

Charge Transfer in Gap Structures Based on the Chalcogenide System (As₂Se₃)_{100 –} _xBi_x

R. A. Castro, S. D. Khanin, A. P. Smirnov and A. A. Kononov p. 1646 abstract

Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor

N. V. Sovtus and K. D. Mynbaev p. 1651 abstract

Synthesis and Characterization of Semiconductor Polymer Doped with FeCl₃ and I₂

Bouabdallah Daho, Claudio Fontanesi, Massimo Messori, Abdelkader Dehbi and Abdelkader Belfedal p. 1656 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Effects of Doping of Lead Sulfide with Silver on the Lattice and Optical Properties of Pb_{1 –} _xAg_xS Solid Solutions

S. I. Sadovnikov p. 1665 abstract

Carbon Systems

Edge Doping in Graphene Devices on SiO₂ Substrates

G. Yu. Vasilyeva, D. Smirnov, Yu. B. Vasilyev, A. A. Greshnov and R. J. Haug p. 1672 abstract

Current–Voltage Characteristics of Composite Graphene–Nanotube Films with Irregular Nanotube Arrangement

O. E. Glukhova, M. M. Slepchenkov, V. V. Mitrofanov and P. V. Barkov p. 1677 abstract

Modification of Carbon-Nanotube Wettability by Ion Irradiation

A. I. Morkovkin, E. A. Vorobyeva, A. P. Evseev, Yu. V. Balakshin and A. A. Shemukhin p. 1683 abstract

Physics of Semiconductor Devices

On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges

N. A. Torkhov, L. I. Babak and A. A. Kokolov p. 1688 abstract

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)

A. M. Nadtochiy, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, A. E. Zhukov, T. Denneulin, N. Cherkashin, V. A. Shchukin and N. N. Ledentsov p. 1699 abstract

Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters

L. B. Karlina, A. S. Vlasov, M. Z. Shvarts, I. P. Soshnikov, I. P. Smirnova, F. E. Komissarenko and A. V. Ankudinov p. 1705 abstract

GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells

N. V. Dikareva, B. N. Zvonkov, I. V. Samartsev, S. M. Nekorkin, N. V. Baidus and A. A. Dubinov p. 1709 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method

V. G. Shchukin, V. O. Konstantinov and R. G. Sharafutdinov p. 1712 abstract

Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers

D. V. Mokhov, T. N. Berezovskaya, E. V. Nikitina, K. Yu. Shubina, A. M. Mizerov and A. D. Bouravleuv p. 1717 abstract

In_xAl_{1 –} _xN Solid Solutions: Composition Stability Issues

V. N. Brudnyi, M. D. Vilisova and L. E. Velikovskiy p. 1724 abstract

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