Contents

Semiconductors

Vol. 50, No. 12, 2016

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Resonant Features of the Terahertz Generation in Semiconductor Nanowires

V. N. Trukhin, A. D. Bouravleuv, I. A. Mustafin, G. E. Cirlin, D. I. Kuritsyn, V. V. Rumyantsev, S. V. Morosov, J. P. Kakko, T. Huhtio and H. Lipsanen p. 1561  abstract

On a New Method of Heterojunction Formation in III–V Nanowires

N. V. Sibirev, A. A. Koryakin and V. G. Dubrovskii p. 1566  abstract

Atomic Composition and Electrical Characteristics of Epitaxial CVD Diamond Layers Doped with Boron

E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Viharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishchev and D. E. Batler p. 1569  abstract

Theoretical and Experimental Studies of the Current–Voltage and Capacitance–Voltage of HEMT Structures and Field-Effect Transistors

E. A. Tarasova, E. S. Obolenskaya, A. V. Hananova, S. V. Obolensky, V. E. Zemliakov, V. I. Egorkin, A. V. Nezhenzev, A. V. Saharov, A. F. Zazul’nokov, V. V. Lundin, E. E. Zavarin and G. V. Medvedev p. 1574  abstract

Microwave-Signal Generation in a Planar Gunn Diode with Radiation Exposure Taken into Account

E. S. Obolenskaya, E. A. Tarasova, A. Yu. Churin, S. V. Obolensky and V. A. Kozlov p. 1579  abstract

Strained Multilayer Structures with Pseudomorphic GeSiSn Layers

V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, M. Yu. Yesin, V. I. Mashanov, A. K. Gutakovskii and N. A. Baidakova p. 1584  abstract

Physical Properties of Metal–Insulator–Semiconductor Structures Based on n-GaAs with InAs Quantum Dots Deposited onto the Surface of an n-GaAs Layer

S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vihrova and A. I. Morozov p. 1589  abstract

Bragg Resonance in a System of AsSb Plasmonic Nanoinclusions in AlGaAs

V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato and B. R. Semyagin p. 1595  abstract

Asymmetric Devices Based on Carbon Nanotubes for Terahertz-Range Radiation Detection

G. E. Fedorov, T. S. Stepanova, A. Sh. Gazaliev, I. A. Gaiduchenko, N. S. Kaurova, B. M. Voronov and G. N. Goltzman p. 1600  abstract

On the Radiative Recombination and Tunneling of Charge Carriers in SiGe/Si Heterostructures with Double Quantum Wells

A. N. Yablonsky, R. Kh. Zhukavin, N. A. Bekin, A. V. Novikov, D. V. Yurasov and M. V. Shaleev p. 1604  abstract

Polariton Condensate Coherence in Planar Microcavities in a Magnetic Field

A. V. Chernenko, A. Rahimi-lman, J. Fischer, M. Amthor, C. Schneider, S. Reitzenstein, A. Forchel and S. Hoefling p. 1609  abstract

Electrical and Photoelectric Properties of Si-Based Metal–Insulator–Semiconductor Structures with Au Nanoparticles at the Insulator–Semiconductor Interface

M. N. Koryazhkina, S. V. Tikhov, O. N. Gorshkov, A. P. Kasatkin and I. N. Antonov p. 1614  abstract

Surface Passivation of GaAs Nanowires by the Atomic Layer Deposition of AlN

I. V. Shtrom, A. D. Bouravleuv, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros and H. Lipsanen p. 1619  abstract

Formation of Singular (001) Terraces on the Surface of Single-Crystal HPHT Diamond Substrates

P. A. Yunin, Yu. N. Drozdov, V. V. Chernov, V. A. Isaev, S. A. Bogdanov and A. B. Muchnikov p. 1622  abstract

CdHgTe Heterostructures for New-Generation IR Photodetectors Operating at Elevated Temperatures

V. S. Varavin, V. V. Vasilyev, A. A. Guzev, S. A. Dvoretsky, A. P. Kovchavtsev, D. V. Marin, I. V. Sabinina, Yu. G. Sidorov, G. Yu. Sidorov, A. V. Tsarenko and M. V. Yakushev p. 1626  abstract

Influence of Surface Roughness on a Change in the Growth Mode from Two-Dimensional to Three-Dimensional for Strained SiGe Heterostructures

A. V. Novikov, M. V. Shaleev, D. V. Yurasov and P. A. Yunin p. 1630  abstract

PbSnTe:In Compound: Electron Capture Levels, Galvanomagnetic Properties, and THz Sensitivity

D. V. Ishchenko, A. E. Klimov, V. N. Shumsky and V. S. Epov p. 1635  abstract

Quantum Hall Effect and Hopping Conductivity in n-InGaAs/InAlAs Nanoheterostructures

S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil’evskii and A. N. Vinichenko p. 1641  abstract

Polarization of the Photoluminescence of Quantum Dots Incorporated into Quantum Wires

A. V. Platonov, V. P. Kochereshko, V. N. Kats, G. E. Cirlin, A. D. Bouravleuv, D. V. Avdoshina, A. Delga, L. Besombes and H. Mariette p. 1647  abstract

Long-Wavelength Stimulated Emission and Carrier Lifetimes in HgCdTe-Based Waveguide Structures with Quantum Wells

V. V. Rumyantsev, M. A. Fadeev, S. V. Morozov, A. A. Dubinov, K. E. Kudryavtsev, A. M. Kadykov, I. V. Tuzov, S. A. Dvoretskii, N. N. Mikhailov, V. I. Gavrilenko and F. Teppe p. 1651  abstract

Electroluminescence of Structures with Self-Assembled Ge(Si) Nanoislands Confined between Strained Si Layers

N. A. Baidakova, A. V. Novikov, M. V. Shaleev, D. V. Yurasov, E. E. Morozova, D. V. Shengurov and Z. F. Krasilnik p. 1657  abstract

Mercury Vacancies as Divalent Acceptors in HgyTe1 – y/CdxHg1 – xTe Structures with Quantum Wells

D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko and F. Teppe p. 1662  abstract

Terahertz Injection Lasers Based on PbSnSe Alloy with an Emission Wavelength up to 46.5 μm

K. V. Maremyanin, V. V. Rumyantsev, A. V. Ikonnikov, L. S. Bovkun, E. G. Chizhevskii, I. I. Zasavitskii and V. I. Gavrilenko p. 1669  abstract

Polarization of the Induced THz Emission of Donors in Silicon

K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov and V. N. Shastin p. 1673  abstract

Effect of Random Inhomogeneities in the Spatial Distribution of Radiation-Induced Defect Clusters on Carrier Transport through the Thin Base of a Heterojunction Bipolar Transistor upon Neutron Irradiation

A. S. Puzanov, S. V. Obolenskiy and V. A. Kozlov p. 1678  abstract

Giant Negative Photoconductivity of PbSnTe:In Films with Wavelength Cutoff near 30 μm

A. N. Akimov, A. E. Klimov, S. V. Morozov, S. P. Suprun, V. S. Epov, A. V. Ikonnikov, M. A. Fadeev and V. V. Rumyantsev p. 1684  abstract

The Exciton Excitations and Relaxation Processes in Low-Dimensional Semiconductor Heterostructures with Quantum Wells

V. Ya. Aleshkin, L. V. Gavrilenko, D. M. Gaponova, Z. F. Krasil’nik and D. I. Kryzhkov p. 1691  abstract