Contents
Semiconductors

Vol. 47, No. 12, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013
(Continuation)

Magnetoabsorption in Narrow-Gap HgCdTe Epitaxial Layers in the Terahertz Range

A. V. Ikonnikov, M. S. Zholudev, V. I. Gavrilenko, N. N. Mikhailov, and S. A. Dvoretskii p. 1545  abstract

Anisotropy of the Solid-State Epitaxy of Silicon Carbide in Silicon

S. A. Kukushkin and A. V. Osipov p. 1551  abstract

Study of Multilayered SiGe Semiconductor Structures
by X-Ray Diffractometry, Grazing-Incidence X-Ray Reflectometry,
and Secondary-Ion Mass Spectrometry

P. A. Yunin, Yu. N. Drozdov, M. N. Drozdov, S. A. Korolev, and D. N. Lobanov p. 1556  abstract

Two-Dimensional Semimetal in Wide HgTe Quantum Wells:
Charge-Carrier Energy Spectrum and Magnetotransport

A. V. Germanenko, G. M. Minkov, O. E. Rut, A. A. Sherstobitov,
S. A. Dvoretsky, and N. N. Mikhailov p. 1562  abstract

Photo- and Electroluminescence from Semiconductor Colloidal Quantum Dots
in Organic Matrices: QD-OLED

A. G. Vitukhnovskii, A. A. Vaschenko, D. N. Bychkovskii, D. N. Dirin,
P. N. Tananaev, M. S. Vakshtein, and D. A. Korzhonov p. 1567  abstract

Photonic Crystals and Bragg Gratings for the mid-IR and Terahertz Spectral Ranges

A. A. Usikova, N. D. Il’inskaya, B. A. Matveev, T. V. Shubina, and P. S. Kop’ev p. 1570  abstract

Lateral Photoconductivity in Structures with Ge/Si Quantum Dots

V. Yu. Panevin, A. N. Sofronov, L. E. Vorobjev, D. A. Firsov, V. A. Shalygin,
M. Ya. Vinnichenko, R. M. Balagula, A. A. Tonkikh, P. Werner, B. Fuhrman, and G. Schmidt p. 1574  abstract

Ab Initio Calculations of the Electronic Structure
of Silicon Nanocrystals Doped with Shallow Donors (Li, P)

N. V. Kurova and V. A. Burdov p. 1578  abstract

Optoelectronic Properties of Heteronanostructures with Combined Layers
of In(Ga)As/GaAs Quantum Wells and Dots

N. S. Volkova, A. P. Gorshkov, A. V. Zdoroveishchev, O. V. Vikhrova, and B. N. Zvonkov p. 1583  abstract

Structural Studies of a Ferromagnetic GaMnSb Layer

A. I. Bobrov, E. D. Pavlova, A. V. Kudrin, and N. V. Malekhonova p. 1587  abstract

Study of Heterostructures with a Combined In(Ga)As/GaAs
Quantum Dot/Quantum Well Layer and a Mn Layer

E. D. Pavlova, A. P. Gorshkov, A. I. Bobrov, N. V. Malekhonova, and B. N. Zvonkov p. 1591  abstract

Growth Model of Silicon Nanoislands on Sapphire

N. O. Krivulin, D. A. Pavlov, and P. A. Shilyaev p. 1595  abstract

Laterally Localizing Potential as a Tool for Controlling
the Electron Spin Relaxation Time in GaAs Quantum Wells

A. V. Larionov and A. I. Il’in p. 1598  abstract

Quasi-Elastic and Inelastic Approximations in the Description
of the Charge Carrier Dynamics in Diamond

Yu. M. Belousov, V. R. Soloviev, and I. V. Chernousov p.1604  abstract

Spectroscopy, Interaction with Radiation

Deposition and Characterization of Molybdenum Thin Films
Using DC-Plasma Magnetron Sputtering

Majid Khan and Mohammad Islam p. 1610  abstract

Simulation of the Absorption of a Femtosecond Laser Pulse in Crystalline Silicon

I. V. Guk, G. A. Martsinovsky, G. D. Shandybina, and E. B. Yakovlev p. 1616  abstract

Surfaces, Interfaces, and Thin Films

Study of the Polarizations of (Al,Ga,AlGa)N Nitride Compounds
and the Charge Density of Various Interfaces Based on Them

I. A. Supryadkina, K. K. Abgaryan, D. I. Bazhanov, and I. V. Mutigullin p. 1621  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Biexcitons Formed from Spatially Separated Electrons and Holes
in Quasi-Zero-Dimensional Semiconductor Nanosystems

S. I. Pokutnyi p. 1626  abstract

Study of the Photocatalytic and Sensor Properties of ZnO/SiO₂ Nanocomposite Layers

A. S. Bozhinova, N. V. Kaneva, I. E. Kononova, S. S. Nalimova, Sh. A. Syuleiman,
K. I. Papazova, D. Ts. Dimitrov, V. A. Moshnikov, and E. I. Terukov p. 1636  abstract

Dynamic Characteristics of Double-Barrier Nanostructures
with Asymmetric Barriers of Finite Height and Widths in a Strong ac Electric Field

V. A. Chuenkov p. 1641  abstract

Physics of Semiconductor Devices

Fabrication and Study of p–n Structures with Crystalline Inclusions in the Space-Charge Region

V. S. Kalinovsky, R. V. Levin, B. V. Pushniy, M. N. Mizerov,
V. D. Rumyantsev, and V. M. Andreev p. 1652  abstract

Spectral Dependence of the Linewidth Enhancement Factor in Quantum Dot Lasers

F. I. Zubov, Yu. M. Shernyakov, M. V. Maximov, A. E. Zhukov, D. A. Livshits,
A. S. Payusov, A. M. Nadtochiy, A. V. Savelyev, N. V. Kryzhanovskaya, and N. Yu. Gordeev p.1656  abstract

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