Contents
Semiconductors

Vol. 45, No. 12, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Deformation of the Surface of Gallium Arsenide during the Deposition of Gold

T. A. Briantseva, D. V. Lioubtchenko, I. A. Markov, and Yu. A. Ten p. 1525  abstract

Morphology, Elemental Composition, and Mechanical Properties
of Polycrystalline CdTe Layers

I. V. Kurilo, H. A. Ilchuk, S. V. Lukashuk, I. O. Rudyi, V. O. Ukrainets, and N. V. Chekaylo p. 1531  abstract

Electronic Properties of Semiconductors

Space-Charge-Limited Currents in an Se₉₅As₅ Chalcogenide Glass-Like
Semiconductor System Containing EuF₃ Impurities

A. I. Isayev, S. I. Mekhtiyeva, and S. N. Qaribova p. 1538  abstract

Effect of Pressure on the Electronic Spectrum of Indium Arsenide

I. K. Kamilov, S. F. Gabibov, M. I. Daunov, and A. Yu. Mollaev p. 1543  abstract

Photopiezoelectric Induction of Resonant Acoustic Waves
in Semi-Insulating Gallium Arsenide Single Crystals

V. I. Mitrokhin, S. I. Rembeza, and R. N. Antonov p. 1550  abstract

Surfaces, Interfaces, and Thin Films

Electrical Properties of Germanium-Based Insulator–Semiconductor Structures
with an Insulating Layer of Polynucleotides, and their Monomer Components on the Surface

A. M. Yafyasov, V. M. Bakulev, P. P. Konorov, and V. V. Bogevolnov p. 1555  abstract

Optical Properties of Nanostructured Lead Sulfide Films with a D0₃ Cubic Structure

S. I. Sadovnikov, N. S. Kozhevnikova, and A. I. Gusev p. 1559  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Movement of the Boundary of a p–n Junction in GaAs:Si under Gyrotronic Irradiation

G. A. Sukach and V. V. Kidalov p. 1571  abstract

Nitride Chemical Passivation of a GaAs (100) Surface:
Effect on the Electrical Characteristics of Au/GaAs Surface-Barrier Structures

V. L. Berkovits, T. V. L’vova, and V. P. Ulin p. 1575  abstract

Electron Microscopy of GaAs Structures with InAs and As Quantum Dots

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii,
M. A. Putyato, and B. R. Semyagin p. 1580  abstract

Amorphous, Vitreous, and Organic Semiconductors

Investigation of the Structure of an Amorphous As–Se Semiconductor System
by Relaxation Methods

R. A. Castro, V. A. Bordovsky, G. I. Grabko, and T. V. Taturevich p.1583  abstract

Physics of Semiconductor Devices

The Influence of a Doping Profile on the Characteristics
of an Ion-Implanted GaAs Field-Effect Transistor with a Schottky Barrier

A. K. Shestakov and K. S. Zhuravlev p. 1589  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Silicon Ion Implantation for Growing Structurally Perfect Silicon Layers on Sapphire

V. M. Vorotyntsev, E. L. Shobolov, and V. A. Gerasimov p. 1600  abstract

Comprehensive Study of the Conditions for Obtaining Hydrogenated Amorphous Erbium-
and Oxygen-Doped Silicon Suboxide Films, a-SiO_x:H Er,O, by dc-Magnetron Deposition

Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. M. Lebedev, and I. N. Trapeznikova p. 1604  abstract

Redistribution of Components in the Niobium–Silicon System
under High-Temperature Proton Irradiation

N. N. Afonin, V. A. Logacheva, and A. M. Khoviv p.1617  abstract

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