Contents
Semiconductors
Vol. 44, No. 12, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Electrical and Optical Properties of Semiconductors
Switching of the Photonic Band Gap in Three-Dimensional Film Photonic Crystals Based
on OpalVO2 Composites in the 1.31.6 m spectral range
A. B. Pevtsov, S. A. Grudinkin, A. N. Poddubny, S. F. Kaplan,
D. A. Kurdyukov, and V. G. Golubev p. 1537 abstract
Features of Vanadium Impurity States in Lead Telluride
A. I. Artamkin, A. A. Dobrovolsky, A. A. Vinokurov, V. P. Zlomanov, S. Y. Gavrilkin,
O. M. Ivanenko, K. V. Mitzen, L. I. Ryabova, and D. R. Khokhlov p. 1543 abstract
Galvanomagnetic and Thermoelectric Properties of BiTeBr
and BiTeI Single Crystals and their Electronic Structure
V. A. Kulbachinskii, V. G. Kytin, Z. V. Lavrukhina,
A. N. Kuznetsov, and A. V. Shevelkov p. 1548 abstract
Semiconductor Structures, Interfaces, and Surfaces
Enhancement of the Output Emission Efficiency
of Thin-Film Photoluminescence Composite Structures Based on PbSe
N. P. Anisimova, N. E. Tropina, and A. N. Tropin p. 1554 abstract
Radiation Effects and Interphase Interactions in Ohmic
and Barrier Contacts to Indium Phosphide as Induced by Rapid Thermal Annealing
and Irradiation with -Ray 60Co Photons
A. E. Belyaev, N. S. Boltovets, A. V. Bobyl, V. N. Ivanov, L. M. Kapitanchuk,
V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. A. Korchevoi, O. S. Lytvyn,
V. V. Milenin, S. V. Novitskii, and V. N. Sheremet p. 1559 abstract
Study of Tunneling Transport of Carriers in Structures with an InGaN/GaN Active Region
V. S. Sizov, V. V. Neploh, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin,
E. E. Zavarin, A. E. Nikolaev, A. M. Mintairov, and J. L. Merz p. 1567 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Specific Features of Photoelectric Properties of Layered Films
of Amorphous Hydrogenated Silicon
I. A. Kurova and N. N. Ormont p. 1576 abstract
Photophysical Properties of Indolo[3,2-b]Carbazoles as a Promising Class
of Optoelectronic Materials
V. M. Svetlichnyi, E. L. Alexandrova, L. A. Miagkova, N. V. Matushina,
T. N. Nekrasova, A. R. Tameev, S. N. Stepanenko, A. V. Vannikov, and V. V. Kudryavtsev p. 1581 abstract
Free-Standing Luminescent Layers of Porous Silicon
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli p.1588 abstract
Physics of Semiconductor Devices
InGaAs/GaAs/AlGaAs Lasers Emitting at a Wavelength of 1190 nm Grown
by MOCVD Epitaxy on GaAs Substrate
D. A. Vinokurov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov,
M. G. Rastegaeva, A. V. Rozhkov, and I. S. Tarasov p. 1592 abstract
Electroluminescence at a Wavelength of 1.5 m in Si:Er/Si Diode Structures
Doped with Al, Ga, and B Acceptors
V. P. Kuznetsov, V. B. Shmagin, M. O. Marychev, K. E. Kudryavtsev, M. V. Kuznetsov,
B. A. Andreev, A. V. Kornaukhov, O. N. Gorshkov, and Z. F. Krasilnik p. 1597 abstract
Multijunction GaInP/GaInAs/Ge Solar Cells with Bragg Reflectors
V. M. Emelyanov, N. A. Kalyuzhniy, S. A. Mintairov, M. Z. Shvarts, and V. M. Lantratov p. 1600 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Effect of Surface Chemical Treatments on Tip-Si1xGex and Nip-Si1xGex Contact Properties
I. G. Atabaev, M. U. Hajiev, N. A. Matchanov, T. M. Saliev, and K. A. Bobojonov p. 1606 abstract
Formation and Crystallization of Silicon Nanoclusters in SiNx:H Films
Using Femtosecond Pulsed Laser Annealings
T. T. Korchagina, V. A. Volodin, and B. N. Chichkov p. 1611 abstract
Formation of 2D Photonic Crystal Bars by Simultaneous Photoelectrochemical
Etching of Trenches and Macropores in Silicon
E. V. Astrova, G. V. Fedulova, and E. V. Guschina p. 1617 abstract
Personalia
Yurii Vasilevich Shmartsev
(Dedicated to his 80th birthday) p.1624
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