Contents
Semiconductors

Vol. 44, No. 12, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electrical and Optical Properties of Semiconductors

Switching of the Photonic Band Gap in Three-Dimensional Film Photonic Crystals Based
on Opal–VO₂ Composites in the 1.3–1.6 m spectral range

A. B. Pevtsov, S. A. Grudinkin, A. N. Poddubny, S. F. Kaplan,
D. A. Kurdyukov, and V. G. Golubev p. 1537  abstract

Features of Vanadium Impurity States in Lead Telluride

A. I. Artamkin, A. A. Dobrovolsky, A. A. Vinokurov, V. P. Zlomanov, S. Y. Gavrilkin,
O. M. Ivanenko, K. V. Mitzen, L. I. Ryabova, and D. R. Khokhlov p. 1543  abstract

Galvanomagnetic and Thermoelectric Properties of BiTeBr
and BiTeI Single Crystals and their Electronic Structure

V. A. Kulbachinskii, V. G. Kytin, Z. V. Lavrukhina,
A. N. Kuznetsov, and A. V. Shevelkov p. 1548  abstract

Semiconductor Structures, Interfaces, and Surfaces

Enhancement of the Output Emission Efficiency
of Thin-Film Photoluminescence Composite Structures Based on PbSe

N. P. Anisimova, N. E. Tropina, and A. N. Tropin p. 1554  abstract

Radiation Effects and Interphase Interactions in Ohmic
and Barrier Contacts to Indium Phosphide as Induced by Rapid Thermal Annealing
and Irradiation with -Ray ⁶⁰Co Photons

A. E. Belyaev, N. S. Boltovets, A. V. Bobyl, V. N. Ivanov, L. M. Kapitanchuk,
V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. A. Korchevoi, O. S. Lytvyn,
V. V. Milenin, S. V. Novitskii, and V. N. Sheremet p. 1559  abstract

Study of Tunneling Transport of Carriers in Structures with an InGaN/GaN Active Region

V. S. Sizov, V. V. Neploh, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin,
E. E. Zavarin, A. E. Nikolaev, A. M. Mintairov, and J. L. Merz p. 1567  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Specific Features of Photoelectric Properties of Layered Films
of Amorphous Hydrogenated Silicon

I. A. Kurova and N. N. Ormont p. 1576  abstract

Photophysical Properties of Indolo[3,2-b]Carbazoles as a Promising Class
of Optoelectronic Materials

V. M. Svetlichnyi, E. L. Alexandrova, L. A. Miagkova, N. V. Matushina,
T. N. Nekrasova, A. R. Tameev, S. N. Stepanenko, A. V. Vannikov, and V. V. Kudryavtsev p. 1581  abstract

Free-Standing Luminescent Layers of Porous Silicon

D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli p.1588  abstract

Physics of Semiconductor Devices

InGaAs/GaAs/AlGaAs Lasers Emitting at a Wavelength of 1190 nm Grown
by MOCVD Epitaxy on GaAs Substrate

D. A. Vinokurov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov,
M. G. Rastegaeva, A. V. Rozhkov, and I. S. Tarasov p. 1592  abstract

Electroluminescence at a Wavelength of 1.5 m in Si:Er/Si Diode Structures
Doped with Al, Ga, and B Acceptors

V. P. Kuznetsov, V. B. Shmagin, M. O. Marychev, K. E. Kudryavtsev, M. V. Kuznetsov,
B. A. Andreev, A. V. Kornaukhov, O. N. Gorshkov, and Z. F. Krasilnik p. 1597  abstract

Multijunction GaInP/GaInAs/Ge Solar Cells with Bragg Reflectors

V. M. Emelyanov, N. A. Kalyuzhniy, S. A. Mintairov, M. Z. Shvarts, and V. M. Lantratov p. 1600  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Effect of Surface Chemical Treatments on Ti–p-Si_1–xGe_x and Ni–p-Si_1–xGe_x Contact Properties

I. G. Atabaev, M. U. Hajiev, N. A. Matchanov, T. M. Saliev, and K. A. Bobojonov p. 1606  abstract

Formation and Crystallization of Silicon Nanoclusters in SiN_x:H Films
Using Femtosecond Pulsed Laser Annealings

T. T. Korchagina, V. A. Volodin, and B. N. Chichkov p. 1611  abstract

Formation of 2D Photonic Crystal Bars by Simultaneous Photoelectrochemical
Etching of Trenches and Macropores in Silicon

E. V. Astrova, G. V. Fedulova, and E. V. Guschina p. 1617  abstract

Personalia

Yurii Vasil’evich Shmartsev (Dedicated to his 80th birthday) p.1624

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