Contents
Semiconductors

Vol. 42, No. 11, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Structural and Energy Characteristics of Native Vacancy-Type Defects
in the Biaxially Stressed GaN Lattice

T. V. Bez’yazychnaya, V. M. Zelenkovskii, A. L. Gurskii, and G. I. Ryabtsev p. 1255  abstract

Deposition-Rate Dependence of the Height of GaAs-Nanowires

N. V. Sibirev, V. G. Dubrovski, G. E. Cirlin, V. A. Egorov,
Yu. B. Samsonenko, and V. M. Ustinov p. 1259  abstract

Electronic and Optical Properties of Semiconductors

Electrical Properties, Photoconductivity, and Photoluminescence of Coarse-Grained p-ZnTe

Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, V. P. Martovisky, and S. N. Nikolaev p. 1264  abstract

Energy Spectrum of Charge Carriers in Ag₂Te

F. F. Aliev and M. B. Jafarov p. 1270  abstract

Electron Spin Resonance of Interacting Spins in n-Ge:
II. Change in the Width and Shape of Lines

A. I. Venger, A. G. Zabrodski, T. V. Tisnek, and S. I. Goloshchapov p. 1274  abstract

Electrical and Galvanomagnetic Properties of Cadmium Telluride Films
Synthesized under Highly Nonequilibrium Conditions

A. P. Belyaev, V. P. Rubets, V. V. Antipov, and V. V. Grishin p. 1282  abstract

Semiconductor Structures, Interfaces, and Surfaces

Formation of Ohmic Contacts to Low-Resistivity Cd_1 – xMg_xTe Alloys
for Photovoltaic Applications

O. A. Parfenyuk, M. I. Ilashchuk, and K. S. Ulyanitsky p. 1286  abstract

Role of Spontaneous Polarization in the Formation
of NH-SiC/3C-SiC/NH-SiC Structures Based on Silicon Carbide Polytypes

S. Yu. Davydov and A. V. Troshin p. 1289  abstract

Electrical and Photoelectric Characteristics of Structures Based on InSe
and GaSe Layered Semiconductors Irradiated with 12.5-MeV Electrons

Z. D. Kovalyuk, O. A. Politanska, O. N. Sydor, and V. T. Maslyuk p. 1292  abstract

Properties of MIS Structures Based on Graded-Gap HgCdTe Grown
by Molecular Beam Epitaxy

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadookh, V. S. Varavin, S. A. Dvoretskii,
N. N. Mikhailov, Yu. G. Sidorov, and V. V. Vasiliev p. 1298  abstract

Static Current–Voltage Characteristics of Au/CaF₂/n-Si(111) MIS Tunneling Structures

S. M. Suturin, A. G. Banshchikov, N. S. Sokolov, S. E. Tyaginov, and M. I. Vexler p. 1304  abstract

Solution of the Problem of Charge-Carrier Injection
into an Insulating Layer under Self-Consistent Boundary Conditions at Contacts

V. I. Shashkin and N. V. Vostokov p. 1309  abstract

Dependence of the Mechanism of Current Flow
in the In–n-GaN Alloyed Ohmic Contact on the Majority Carrier Concentration

V. N. Bessolov, T. V. Blank, Yu. A. Goldberg, O. V. Konstantinov, and E. A. Posse p. 1315  abstract

Low-Dimensional Systems

Magnetooptical Properties of a Single CdMnSe/CdMgSe Quantum Well

I. I. Reshina and S. V. Ivanov p. 1318  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Properties and Structure of (As₂Se₃)_1 – z(SnSe₂)_z – x(Tl₂Se)_x
and (As₂Se₃)_1 – z(SnSe)_z – x(Tl₂Se)_x Glasses

G. A. Bordovsky, A. V. Marchenko, E. I. Terukov, P. P. Seregin, and T. V. Likhodeeva p. 1323  abstract

Effect of Electric Field in the Course of Obtaining a-SiO_x:H(Er, O) Films
by dc Magnetron Sputtering on Their Composition
and Photoluminescence Intensity of Erbium Ions

Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. M. Lebedev, and I. N. Trapeznikova p. 1327  abstract

Specific Features of Light Current–Voltage Characteristics of p–i–n Structures Based
on Amorphous Silicon in the Case of the Tunnel-Drift Mechanism of Dark Current Transport

A. A. Andreev p. 1334  abstract

Photosensitive Properties of Metal-Containing Polydisalicylidene Azomethines

E. L. Alexandrova, A. G. Ivanov, N. M. Heller, L. B. Nadezhdina, and V. V. Shamanin p. 1338  abstract

Physics of Semiconductor Devices

Measurement of the Absorption Coefficient for Light Laterally Propagating
in Light-Emitting Diode Structures with In_0.2Ga_0.8N/GaN Quantum Wells

Yu. S. Lelikov, N. I. Bochkareva, R. I. Gorbunov, I. A. Martynov,
Yu. T. Rebane, D. V. Tarkin, and Yu. G. Shreter p. 1342  abstract

Edge Electroluminescence of the Effective Silicon Point-Junction Light-Emitting Diode
in the Temperature Range 80–300 K

A. M. Emel’yanov p. 1346  abstract

Features of the Capacitance–Voltage Characteristics
in a MOS Structure Due to the Oxide Charge

E. A. Bobrova and N. M. Omeljanovskaya p. 1351  abstract

Optical Properties of Blue Light-Emitting Diodes in the InGaN/GaN System
at High Current Densities

N. I. Bochkareva, R. I. Gorbunov, A. V. Klochkov, Yu. S. Lelikov, I. A. Martynov,
Yu. T. Rebane, A. S. Belov, and Yu. G. Shreter p. 1355  abstract

Fast Optical Recording Media Based on Semiconductor Nanostructures
for Image Recording and Processing

P. G. Kasherininov and A. A. Tomasov p. 1362  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Model of Thermal Oxidation of Silicon at the Volume-Reaction Front

O. V. Aleksandrov and A. I. Dusj p. 1370  abstract

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.