Contents
Semiconductors


Vol. 41, No. 11, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Review

Mechanisms of Current Flow in Metal–Semiconductor Ohmic Contacts

T. V. Blank and Yu. A. Gol’dberg p. 1263  abstract


Electronic and Optical Properties of Semiconductors

Large-Magnitude Spin Polarization of Electrons in an InAs-Based Diode Structure

Ya. V. Terent’ev, O. G. Lyublinskaya, A. A. Usikova, A. A. Toropov,
V. A. Solov’ev, and S. V. Ivanov
p. 1293  abstract

Cathodoluminescence from Dilute GaNxAs1–x Solutions (x < equal 0.03)

P. N. Brunkov, A. A. Gutkin, M. V. Zamoryanskaya, and V. S. Khrustalev p. 1297  abstract

Field Effect and Capacitance of Silicon Crystals with Hopping Conductivity
over Point Radiation Defects Pinning the Fermi Level

N. A. Poklonski, S. A. Vyrko, and A. G. Zabrodskii p. 1300  abstract


Semiconductor Structures, Interfaces, and Surfaces

Properties of CuIn3Se5 Crystals and In/CuIn3Se5 Structures

I. V. Bodnar’, V. Yu. Rud’, and Yu. V. Rud’ p. 1307  abstract

Barrier-Height Measurement for a Gallium Arsenide Metal–Semi-insulator Interface

G. I. Ayzenshtat, M. A. Lelekov, and O. P. Tolbanov p. 1310  abstract

Erbium Ion Electroluminescence in p++/n+/n-Si:Er/n++ Silicon Diode Structures

V. P. Kuznetsov, D. Yu. Remizov, V. B. Shmagin, K. E. Kudryavtsev, V. N. Shabanov,
S. V. Obolensky, O. V. Belova, M. V. Kuznetsov, A. V. Kornaukhov,
B. A. Andreev, and Z. F. Krasil’nik
p. 1312  abstract


Low-Dimensional Systems

Transport Properties of Two-Dimensional Hole Gas
in a Ge1–xSix/Ge/Ge1–xSix Quantum Well in the Vicinity of Metal–Insulator Transition

Yu. G. Arapov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin,
S. V. Gudina, I. V. Karskanov, O. A. Kuznetsov, A. de Visser, and L. Ponomarenko
p. 1315  abstract

Exciton States in Semiconductor Quantum Dots
in the Modified Effective Mass Approximation

S. I. Pokutnyframe0 p. 1323  abstract

Integer Quantum Hall Effect and Correlated Disorder

A. A. Greshnov and G. G. Zegrya p. 1329  abstract

Capacitance Studies of Multilayer Ensembles of InAs QDs in a GaAs Matrix

A. A. Gutkin, P. N. Brunkov, and S. G. Konnikov p. 1335  abstract

Production of Quantum Dots by Selective Interdiffusion in CdTe/CdMgTe Quantum Wells

S. V. Zaitsev, M. K. Welsch, A. Forchel, and G. Bacher p. 1339  abstract

CdSe/ZnSe Quantum Dot Structures Grown by Molecular Beam Epitaxy
with a CdTe Submonolayer Stressor

I. V. Sedova, O. G. Lyublinskaya, S. V. Sorokin, A. A. Sitnikova, A. A. Toropov,
F. Donatini, Le Si Dang, and S. V. Ivanov
p. 1345  abstract

Specific Features of Dissipation of Electronic Excitation Energy
in Coupled Molecular Solid Systems Based on Silicon Nanocrystals
on Intense Optical Pumping

D. A. Palenov, D. M. Zhigunov, O. A. Shalygina,
P. K. Kashkarov, and V. Yu. Timoshenko
p. 1351  abstract

Effect of Growth Temperature on Photoluminescence
of Self-Assembled Ge(Si) Islands Confined between Strained Si Layers

M. V. Shaleev, A. V. Novikov, A. N. Yablonskiframe1, O. A. Kuznetsov, Yu. N. Drozdov,
D. N. Lobanov, and Z. F. Krasil’nik
p. 1356  abstract


Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Raman Scattering in Semiconductor Structures Based
on Monophthalocyanine and Triphthalocyanine Molecules Incorporating Erbium Ions

I. A. Belogorokhov, E. V. Tikhonov, M. O. Breusova, V. E. Pushkarev, A. V. Zoteev,
L. G. Tomilova, and D. R. Khokhlov
p. 1361  abstract


Physics of Semiconductor Devices

Frequency Shift in a System of Two Laser Diodes

A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, V. Ya. Aleshkin, V. I. Gavrilenko,
K. V. Marem’yanin, S. V. Morozov, V. V. Kocharovskii, and Vl. V. Kocharovskii
p. 1364  abstract

Properties of GaInAsSb/GaSb ( = 1.8–2.3 m) Immersion Lens Photodiodes at 20–140°C

S. A. Karandashev, B. A. Matveev, M. A. Remennyi, A. A. Shlenskii, L. S. Lunin,
V. I. Ratushnyi, A. V. Koryuk, and N. G. Tarakanova
p. 1369  abstract

Two-Band Combined Model of a Resonant Tunneling Diode

I. I. Abramov, I. A. Goncharenko, and N. V. Kolomeitseva p. 1375  abstract

Specific Features of Dynamic Injection and Base Layer Modulation Processes
in Power n+pp+ Diodes

T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, and S. N. Yurkov p. 1381  abstract


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