Contents
Semiconductors
Vol. 41, No. 11, 2007
Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Review
Mechanisms of Current Flow in Metal–Semiconductor Ohmic Contacts
T. V. Blank and Yu. A. Gol’dberg p. 1263 abstract
Electronic and Optical Properties of Semiconductors
Large-Magnitude Spin Polarization of Electrons in an InAs-Based Diode Structure
Ya. V. Terent’ev, O. G. Lyublinskaya, A. A. Usikova, A. A. Toropov,
V. A. Solov’ev, and S. V. Ivanov p. 1293 abstract
Cathodoluminescence from Dilute GaNxAs1–x Solutions (x 0.03)
P. N. Brunkov, A. A. Gutkin, M. V. Zamoryanskaya, and V. S. Khrustalev p. 1297 abstract
Field Effect and Capacitance of Silicon Crystals with Hopping Conductivity
over Point Radiation Defects Pinning the Fermi Level
N. A. Poklonski, S. A. Vyrko, and A. G. Zabrodskii p. 1300 abstract
Semiconductor Structures, Interfaces, and Surfaces
Properties of CuIn3Se5 Crystals and In/CuIn3Se5 Structures
I. V. Bodnar’, V. Yu. Rud’, and Yu. V. Rud’ p. 1307 abstract
Barrier-Height Measurement for a Gallium Arsenide Metal–Semi-insulator Interface
G. I. Ayzenshtat, M. A. Lelekov, and O. P. Tolbanov p. 1310 abstract
Erbium Ion Electroluminescence in p++/n+/n-Si:Er/n++ Silicon Diode Structures
V. P. Kuznetsov, D. Yu. Remizov, V. B. Shmagin, K. E. Kudryavtsev, V. N. Shabanov,
S. V. Obolensky, O. V. Belova, M. V. Kuznetsov, A. V. Kornaukhov,
B. A. Andreev, and Z. F. Krasil’nik p. 1312 abstract
Low-Dimensional Systems
Transport Properties of Two-Dimensional Hole Gas
in a Ge1–xSix/Ge/Ge1–xSix Quantum Well in the Vicinity of Metal–Insulator Transition
Yu. G. Arapov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin,
S. V. Gudina, I. V. Karskanov, O. A. Kuznetsov, A. de Visser, and L. Ponomarenko p. 1315 abstract
Exciton States in Semiconductor Quantum Dots
in the Modified Effective Mass Approximation
S. I. Pokutnyp. 1323 abstract
Integer Quantum Hall Effect and Correlated Disorder
A. A. Greshnov and G. G. Zegrya p. 1329 abstract
Capacitance Studies of Multilayer Ensembles of InAs QDs in a GaAs Matrix
A. A. Gutkin, P. N. Brunkov, and S. G. Konnikov p. 1335 abstract
Production of Quantum Dots by Selective Interdiffusion in CdTe/CdMgTe Quantum Wells
S. V. Zaitsev, M. K. Welsch, A. Forchel, and G. Bacher p. 1339 abstract
CdSe/ZnSe Quantum Dot Structures Grown by Molecular Beam Epitaxy
with a CdTe Submonolayer Stressor
I. V. Sedova, O. G. Lyublinskaya, S. V. Sorokin, A. A. Sitnikova, A. A. Toropov,
F. Donatini, Le Si Dang, and S. V. Ivanov p. 1345 abstract
Specific Features of Dissipation of Electronic Excitation Energy
in Coupled Molecular Solid Systems Based on Silicon Nanocrystals
on Intense Optical Pumping
D. A. Palenov, D. M. Zhigunov, O. A. Shalygina,
P. K. Kashkarov, and V. Yu. Timoshenko p. 1351 abstract
Effect of Growth Temperature on Photoluminescence
of Self-Assembled Ge(Si) Islands Confined between Strained Si Layers
M. V. Shaleev, A. V. Novikov, A. N. Yablonski, O. A. Kuznetsov, Yu. N. Drozdov,
D. N. Lobanov, and Z. F. Krasil’nik p. 1356 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Raman Scattering in Semiconductor Structures Based
on Monophthalocyanine and Triphthalocyanine Molecules Incorporating Erbium Ions
I. A. Belogorokhov, E. V. Tikhonov, M. O. Breusova, V. E. Pushkarev, A. V. Zoteev,
L. G. Tomilova, and D. R. Khokhlov p. 1361 abstract
Physics of Semiconductor Devices
Frequency Shift in a System of Two Laser Diodes
A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, V. Ya. Aleshkin, V. I. Gavrilenko,
K. V. Marem’yanin, S. V. Morozov, V. V. Kocharovskii, and Vl. V. Kocharovskii p. 1364 abstract
Properties of GaInAsSb/GaSb ( = 1.8–2.3
m) Immersion Lens Photodiodes at 20–140°C
S. A. Karandashev, B. A. Matveev, M. A. Remennyi, A. A. Shlenskii, L. S. Lunin,
V. I. Ratushnyi, A. V. Koryuk, and N. G. Tarakanova p. 1369 abstract
Two-Band Combined Model of a Resonant Tunneling Diode
I. I. Abramov, I. A. Goncharenko, and N. V. Kolomeitseva p. 1375 abstract
Specific Features of Dynamic Injection and Base Layer Modulation Processes
in Power n+–p–p+ Diodes
T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, and S. N. Yurkov p. 1381 abstract
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