Contents
Semiconductors

Vol. 39, No. 11, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Review

Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4 m Mid-Infrared Spectral Range

T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov, and Yu. P. Yakovlev p. 1235  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Growth Kinetics of Thin Films Formed by Nucleation during Layer Formation

V. G. Dubrovskiand G. E. Cirlin p. 1267  abstract

Hydrogen Desorption from the Surface under the Conditions of Epitaxial Growth
of Silicon Layers from Monosilane in Vacuum

L. K. Orlov and T. N. Smyslova p. 1275  abstract

Adsorption, Desorption, and Contact and Thermal Transformation of C₆₀ Molecules
on a Ta(100) Surface

N. R. Gall’, E. V. Rut’kov, and A. Ya. Tontegode^† p. 1280  abstract

Electronic and Optical Properties of Semiconductors

Applicability of a Simplified Shockley–Read–Hall Model to Semiconductors
with Various Types of Defects

A. N. Yashin p. 1285  abstract

Semiconductor Structures, Interfaces, and Surfaces

Sensitivity of Insulator–Semiconductor Structures to Time-Dependent Light Fluxes

N. F. Kovtonyuk, V. P. Misnik, and A. V. Sokolov p. 1290  abstract

Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases

Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, and T. N. Ushakova p. 1294  abstract

Dynamics of Laser-Induced Phase Transitions in Cadmium Telluride

A. A. Kovalev, S. P. Zhvavy, and G. L. Zykov p. 1299  abstract

Low-Dimensional Systems

Studies of the Electron Spectrum in Structures with InGaN Quantum Dots Using
Photocurrent Spectroscopy

D. S. Sizov, V. S. Sizov, V. V. Lundin, A. F. Tsatsul’nikov, E. E. Zavarin, and N. N. Ledentsov p. 1304  abstract

Specific Features of Photoluminescence of InAs/GaAs QD Structures
at Different Pumping Levels

V. A. Kulbachinskii, V. A. Rogozin, R. A. Lunin, A. A. Belov, A. L. Karuzski,
A. V. Perestoronin, and A. V. Zdoroveishchev p. 1308  abstract

Interband Light Absorption in Size-Confined Systems in Uniform Electric Fields

É. P. Sinyavskii, S. M. Sokovnich, and R. A. Khamidullin p. 1313  abstract

Photoluminescence of Silicon Nanocrystals under the Effect of an Electric Field

E. N. Vandyshev, A. M. Gilinski, T. S. Shamirzaev, and K. S. Zhuravlev p. 1319  abstract

Circular Polarization of Luminescence Caused by the Current in Quantum Wells

N. S. Averkiev and A. Yu. Silov p. 1323  abstract

Amorphous, Vitreous, and Porous Semiconductors

Opal–ZnO Nanocomposites: Structure and Emission Properties

G. A. Emel’chenko, A. N. Gruzintsev, M. N. Koval’chuk, V. M. Masalov, É. N. Samarov,
E. E. Yakimov, C. Barthou, and I. I. Zver’kova p. 1328  abstract

Luminescence and Electrical Conductivity of Polyamide Acid
and Its Metal–Polymer Complexes with La and Tb

É. A. Lebedev, M. Ya. Gokhman, D. M. Zhigunov, I. V. Podeshvo,
V. V. Kudryavtsev, and V. Yu. Timoshenko p. 1333  abstract

Effect of the Initial Doping Level on Changes in the Free-Carrier Concentration
in Porous Silicon during Ammonia Adsorption

A. V. Pavlikov, L. A. Osminkina, I. A. Belogorokhov, E. A. Konstantinova, A. I. Efimova,
V. Yu. Timoshenko, and P. K. Kashkarov p. 1338  abstract

Physics of Semiconductor Devices

Removal of Fluoropolimers from the Surface of Silicon Structures by Treatment
in an Atomic Hydrogen Flow

E. V. Anishchenko, V. A. Kagade, E. V. Nefedtsev, D. I. Proskurovski, and S. V. Romanenko p. 1342  abstract

A New Type of High-Efficiency Bifacial Silicon Solar Cell with External Busbars
and a Current-Collecting Wire Grid

G. G. Untila, T. N. Kost, A. B. Chebotareva, M. B. Zaks, A. M. Sitnikov, and O. I. Solodukha p. 1346  abstract

Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

Á. Nemcsics p. 1352  abstract

Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge
of Distributed Bragg Reflectors Based on a-Si:H/a-SiO_x:H

A. V. Medvedev, N. A. Feoktistov, A. B. Pevtsov, and V. G. Golubev p. 1356  abstract

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