Contents
Semiconductors

Vol. 37, No. 11, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Electronic and Optical Properties of Semiconductors

Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites

N. I. Medvedeva, E. I. Yur’eva, and A. L. Ivanovski p. 1243  abstract

Optical and Thermal Properties of CuAl_xIn_1–xTe₂ Solid Solutions

I. V. Bodnar’ p. 1247  abstract

Defect-Related Luminescence of GaN:Zn Films Thermally Treated
in a Radio-Frequency Ammonia Plasma

G. A. Sukach, V. V. Kidalov, A. I. Vlasenko, and E. P. Potapenko p. 1252  abstract

Effective Electron Mass in a Mn_xHg_1–xTe System

I. M. Nesmelova p. 1257  abstract

Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown
under Nonequilibrium Conditions

V. V. Ushakov and Yu. V. Klevkov p. 1259  abstract

Ultraviolet Luminescence of Thin GaN Films Grown by Radical-Beam Gettering Epitaxy
on Porous GaAs(111) Substrates

V. V. Kidalov, G. A. Sukach, A. S. Revenko, and E. P. Potapenko p. 1264  abstract

Hopping Polarization Photoconductivity of Silicon with the Involvement
of Impurity Pairs of Groups III and V

Ya. E. Pokrovski and N. A. Khval’kovski p. 1266  abstract

Defect Formation in PbTe under the Action of a Laser Shock Wave

V. S. Yakovyna, D. M. Zayachuk, and N. N. Berchenko p. 1275  abstract

Galvanomagnetic Effects in Atomic-Disordered HgSe_1–xS_x Compounds

A. E. Kar’kin, V. V. Shchennikov, S. E. Danilov, V. A. Arbuzov, and B. N. Goshchitski p. 1278  abstract

Semiconductor Structures, Interfaces, and Surfaces

Photosensitive Structure on CdGa₂S₄ Single Crystals

V. Yu. Rud’, Yu. V. Rud’, A. A. Vapolin, I. V. Bodnar’, and N. Fernelius p. 1283  abstract

Photoelectric Phenomena in ZnO:Al–p-Si Heterostructures

S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 1291  abstract

The Thermoelectric Power of a Semiconductor p–n Heterojunction

M. M. Gadzhialiev and Z. Sh. Pirmagomedov p. 1296  abstract

On the Influence of a Si Single-Crystal Real Surface on the Low-Frequency Internal Friction
and the Behavior of an Effective Shear Modulus

A. V. Olenich-Lysyuk, N. P. Beshley, and I. M. Fodchuk p. 1299  abstract

Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures

I. V. Antonova, V. A. Stuchinski, O. V. Naumova, D. V. Nikolaev, and V. P. Popov p. 1303  abstract

Photosensitive Structures Based on In₂S₃ Crystals

I. V. Bodnar’, V. A. Polubok, V. Yu. Rud’, and Yu. V. Rud’ p. 1308  abstract

Kinetics of the Initial Stage in Chalcogenide Passivation of III–V Semiconductors

V. F. Antyushin, A. V. Budanov, D. S. Kukharenko, and D. A. Palishkin p. 1311  abstract

Low-Dimensional Systems

Pulsed-Laser Modification of Germanium Nanoclusters in Silicon

V. A. Volodin, E. I. Gatskevich, A. V. Dvurechenski, M. D. Efremov, G. D. Ivlev,
A. I. Nikiforov, D. A. Orekhov, and A. I. Yakimov p. 1315  abstract

Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix
of a Langmuir–Blodgett Film

E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova, I. A. Badmaeva,
S. M. Repinski, and M. Voelskow p. 1321  abstract

Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix

N. V. Kryzhanovskaya, A. G. Gladyshev, A. R. Kovsh, I. P. Soshnikov, A. F. Tsatsul’nikov,
H. Kirmse, W. Neumann, J. Y. Chi, J. S. Wang, L. Wei, N. N. Ledentsov, and V. M. Ustinov p. 1326  abstract

Spontaneous Formation of the Periodic Composition-Modulated Nanostructure
in Cd_xHg_1–xTe Films

P. A. Bakhtin, V. S. Varavin, S. A. Dvoretski, A. F. Kravchenko, A. V. Latyshev,
N. N. Mikchalov, I. V. Sabinina, Yu. G. Sidorov, and M. V. Yakushev p. 1331  abstract

Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures

M. Ya. Valakh, M. P. Lisitsa, V. V. Strelchuk, M. V. Vuchik, S. V. Ivanov,
A. A. Toropov, T. V. Shubina, and P. S. Kop’ev p. 1336  abstract

Amorphous, Vitreous, and Porous Semiconductors

Extremal Dependence of the Concentration of Paramagnetic Centers Related
to Dangling Bonds in Si on Ion-Irradiation Dose as Evidence of Nanostructuring

D. I. Tetelbaum, A. A. Ezhevski, and A. N. Mikhalov p. 1342  abstract

Physics of Semiconductor Devices

Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots
for the Near Infrared (1.3–1.5 m) Region

A. I. Yakimov, A. V. Dvurechenski, A. I. Nikiforov, S. V. Chakovski, and S. A. Tis p. 1345  abstract

Thermoelements with Side Heat Exchange

A. A. Ashcheulov, V. G. Okhrem, and E. A. Okhrem p. 1350  abstract

1.7–1.8 m Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures

A. V. Lyutetski, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova,
A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova,
Yu. A. Ryaboshtan, and I. S. Tarasov p. 1356  abstract

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