Contents
Semiconductors
Vol. 37, No. 11, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Electronic and Optical Properties of Semiconductors
Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites
N. I. Medvedeva, E. I. Yureva, and A. L. Ivanovskip. 1243 abstract
Optical and Thermal Properties of CuAlxIn1xTe2 Solid Solutions
I. V. Bodnar p. 1247 abstract
Defect-Related Luminescence of GaN:Zn Films Thermally Treated
in a Radio-Frequency Ammonia Plasma
G. A. Sukach, V. V. Kidalov, A. I. Vlasenko, and E. P. Potapenko p. 1252 abstract
Effective Electron Mass in a MnxHg1xTe System
I. M. Nesmelova p. 1257 abstract
Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown
under Nonequilibrium Conditions
V. V. Ushakov and Yu. V. Klevkov p. 1259 abstract
Ultraviolet Luminescence of Thin GaN Films Grown by Radical-Beam Gettering Epitaxy
on Porous GaAs(111) Substrates
V. V. Kidalov, G. A. Sukach, A. S. Revenko, and E. P. Potapenko p. 1264 abstract
Hopping Polarization Photoconductivity of Silicon with the Involvement
of Impurity Pairs of Groups III and V
Ya. E. Pokrovskiand N. A. Khvalkovski
p. 1266 abstract
Defect Formation in PbTe under the Action of a Laser Shock Wave
V. S. Yakovyna, D. M. Zayachuk, and N. N. Berchenko p. 1275 abstract
Galvanomagnetic Effects in Atomic-Disordered HgSe1xSx Compounds
A. E. Karkin, V. V. Shchennikov, S. E. Danilov, V. A. Arbuzov, and B. N. Goshchitskip. 1278 abstract
Semiconductor Structures, Interfaces, and Surfaces
Photosensitive Structure on CdGa2S4 Single Crystals
V. Yu. Rud, Yu. V. Rud, A. A. Vapolin, I. V. Bodnar, and N. Fernelius p. 1283 abstract
Photoelectric Phenomena in ZnO:Alp-Si Heterostructures
S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud, Yu. V. Rud, and E. I. Terukov p. 1291 abstract
The Thermoelectric Power of a Semiconductor pn Heterojunction
M. M. Gadzhialiev and Z. Sh. Pirmagomedov p. 1296 abstract
On the Influence of a Si Single-Crystal Real Surface on the Low-Frequency Internal Friction
and the Behavior of an Effective Shear Modulus
A. V. Olenich-Lysyuk, N. P. Beshley, and I. M. Fodchuk p. 1299 abstract
Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures
I. V. Antonova, V. A. Stuchinski, O. V. Naumova, D. V. Nikolaev, and V. P. Popov p. 1303 abstract
Photosensitive Structures Based on In2S3 Crystals
I. V. Bodnar, V. A. Polubok, V. Yu. Rud, and Yu. V. Rud p. 1308 abstract
Kinetics of the Initial Stage in Chalcogenide Passivation of IIIV Semiconductors
V. F. Antyushin, A. V. Budanov, D. S. Kukharenko, and D. A. Palishkin p. 1311 abstract
Low-Dimensional Systems
Pulsed-Laser Modification of Germanium Nanoclusters in Silicon
V. A. Volodin, E. I. Gatskevich, A. V. Dvurechenski, M. D. Efremov, G. D. Ivlev,
A. I. Nikiforov, D. A. Orekhov, and A. I. Yakimov p. 1315 abstract
Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix
of a LangmuirBlodgett Film
E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova, I. A. Badmaeva,
S. M. Repinski, and M. Voelskow p. 1321 abstract
Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix
N. V. Kryzhanovskaya, A. G. Gladyshev, A. R. Kovsh, I. P. Soshnikov, A. F. Tsatsulnikov,
H. Kirmse, W. Neumann, J. Y. Chi, J. S. Wang, L. Wei, N. N. Ledentsov, and V. M. Ustinov p. 1326 abstract
Spontaneous Formation of the Periodic Composition-Modulated Nanostructure
in CdxHg1xTe Films
P. A. Bakhtin, V. S. Varavin, S. A. Dvoretski, A. F. Kravchenko, A. V. Latyshev,
N. N. Mikchalov, I. V. Sabinina, Yu. G. Sidorov, and M. V. Yakushev p. 1331 abstract
Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures
M. Ya. Valakh, M. P. Lisitsa, V. V. Strelchuk, M. V. Vuchik, S. V. Ivanov,
A. A. Toropov, T. V. Shubina, and P. S. Kopev p. 1336 abstract
Amorphous, Vitreous, and Porous Semiconductors
Extremal Dependence of the Concentration of Paramagnetic Centers Related
to Dangling Bonds in Si on Ion-Irradiation Dose as Evidence of Nanostructuring
D. I. Tetelbaum, A. A. Ezhevski, and A. N. Mikha
lov p. 1342 abstract
Physics of Semiconductor Devices
Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots
for the Near Infrared (1.31.5 m) Region
A. I. Yakimov, A. V. Dvurechenski, A. I. Nikiforov, S. V. Cha
kovski
, and S. A. Ti
s p. 1345 abstract
Thermoelements with Side Heat Exchange
A. A. Ashcheulov, V. G. Okhrem, and E. A. Okhrem p. 1350 abstract
1.71.8 m Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
A. V. Lyutetski, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova,
A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova,
Yu. A. Ryaboshtan, and I. S. Tarasov p. 1356 abstract
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