Contents
Semiconductors

Vol. 36, No. 11, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Dedicated to the Memory of V. F. Masterov

Vadim Fedorovich Masterov, a Scientist and a Teacher

V. K. Ivanov and B. P. Popov p. 1199  abstract

International Symposium on Photoluminescence and Electroluminescence
of Rare-Earth Elements in Semiconductors and Insulators

E. I. Terukov p. 1202  abstract

V. F. Masterov’s School and Fullerene Research at the Department
of Experimental Physics, St. Petersburg State Technical University

A. V. Prikhodko and O. I. Konkov p. 1204  abstract

A Model for the Formation of Donor Centers in Silicon Layers Implanted
with Erbium and Oxygen Ions

O. V. Aleksandrov and A. O. Zakhar’in p. 1209  abstract

Emission from Rare-Earth Centers in (ZnTe:Yb):O/GaAs

V. M. Konnov, N. N. Loko, Yu. G. Sadof’ev, A. S. Trushin, and E. I. Makhov p. 1215  abstract

Temperature Dependences of Photoluminescence Spectra
of Single-Crystal Ca₂GeO₄:Cr⁴⁺ Films

O. N. Gorshkov, E. S. Demidov, E. M. Dianov, A. P. Kasatkin,
V. F. Lebedev, G. A. Maksimov, S. A. Tyurin, A. B. Chigineva,
Yu. I. Chigirinski, and A. N. Shushunov p. 1221  abstract

Effect of Surface State Density on Room Temperature Photoluminescence
from Si–SiO₂ Structures in the Range of Band-to-Band Recombination in Silicon

A. M. Emel’yanov, N. A. Sobolev, and S. Pizzini p. 1225  abstract

Buried Nanoscale Damaged Layers Formed in Si and SiC Crystals
as a Result of High-Dose Proton Implantation

V. A. Kozlov, V. V. Kozlovski, A. N. Titkov,
M. S. Dunaevski, and A. K. Kryzhanovski p. 1227  abstract

The Formation of -FeSi₂ Precipitates in Microcrystalline Si

E. I. Terukov, O. I. Kon’kov, V. Kh. Kudoyarova,
O. B. Gusev, V. Yu. Davydov, and G. N. Mosina p. 1235  abstract

Erbium Electroluminescence in p–i–n Amorphous Hydrogenated Silicon Structures

E. I. Terukov, O. B. Gusev, O. I. Kon’kov, Yu. K. Undalov,
M. Stutzmann, A. Janotta, H. Mell, and J. P. Kleider p. 1240  abstract

Photoluminescence and Excitation Features of Nd³⁺ Ions in (La_0.97Nd_0.03)₂S₃ · 2Ga₂O₃ Glasses

A. A. Babaev, E. M. Zobov, V. V. Sokolov, and A. Kh. Sharapudinova p. 1244  abstract

Conductivity and Structure of Er-Doped Amorphous Hydrogenated Silicon Films

O. I. Kon’kov, E. I. Terukov, and L. S. Granitsina p. 1248  abstract

Nature of Impurity Centers of Rare-Earth Metals and Self-Organization Processes in a-Si:H Films

M. M. Mezdrogina, I. N. Trapeznikova, E. I. Terukov,
F. S. Nasredinov, N. P. Seregin, and P. P. Seregin p. 1252  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

The Influence of Sinks of Intrinsic Point Defects on Phosphorus Diffusion in Si

O. V. Aleksandrov p. 1260  abstract

Electronic and Optical Properties of Semiconductors

Possibility of Observing Bose–Einstein Condensation in Semiconductors
via Mössbauer Spectroscopy using the ⁶⁷Zn Isotope

S. A. Nemov, N. P. Seregin, and S. M. Irkaev p. 1267  abstract

Radiation Hardness of Wide-Gap Semiconductors (using the Example of Silicon Carbide)

A. A. Lebedev, V. V. Kozlovski, N. B. Strokan, D. V. Davydov,
A. M. Ivanov, A. M. Strel’chuk, and R. Yakimova p. 1270  abstract

Kinetic Theory of Negative Magnetoresistance as an Alternative
to Weak Localization in Semiconductors

V. É. Kaminski p. 1276  abstract

Semiconductor Structures, Interfaces, and Surfaces

The Influence of Adsorbate on the Work Function and Penetrability
of the Surface Potential Barrier of GaAs(110) Single Crystal

Yu. I. Asalkhanov and V. N. Abarykov p. 1283  abstract

Low-Dimensional Systems

ZnMnSe/ZnSSe Type-II Semimagnetic Superlattices:
Growth and Magnetoluminescence Properties

A. A. Toropov, A.V. Lebedev, S. V. Sorokin, D. D. Solnyshkov,
S. V. Ivanov, P. S. Kop’ev, I. A. Buyanova,
W. M. Chen, and B. Monemar p. 1288  abstract

Ordering of Nanostructures in a Si/Ge_0.3Si_0.7/Ge System during Molecular Beam Epitaxy

G. E. Cirlin, V. A. Egorov^,, L. V. Sokolov, and P. Werner p. 1294  abstract

Amorphous, Vitreous, and Porous Semiconductors

Effect of Fullerene on the Photogeneration and Transport
of Charge Carriers in Triphenylamine-Containing Polyimides

E. L. Aleksandrova p. 1299  abstract

Physics of Semiconductor Devices

Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing
under the Conditions of Transverse Oscillations of Luminous Flux

A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev p. 1303  abstract

High Power Single-Mode ( = 1.3–1.6 m) Laser Diodes Based
on Quantum Well InGaAsP/InP Heterostructures

A. Yu. Leshko, A. V. Lyutetski, N. A. Pikhtin, S. O. Slipchenko,
Z. N. Sokolova, N. V. Fetisova, E. G. Golikova,
Yu. A. Ryaboshtan, and I. S. Tarasov p. 1308  abstract

High Efficiency (_D > 80%) Long Wavelength ( > 1.25 m)
Quantum Dot Diode Lasers on GaAs Substrates

S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, A. P. Vasil’ev,
E. S. Semenova, V. M. Ustinov, M. M. Kulagina, E. V. Nikitina,
I. P. Soshnikov, Yu. M. Shernyakov, D. A. Livshits, N. V. Kryjanovskaya,
D. S. Sizov, M. V. Maksimov, A. F. Tsatsul’nikov, N. N. Ledentsov,
D. Bimberg, and Zh. I. Alferov p. 1315  abstract

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