Vol. 55, No. 11, 2021

Semiconductors

Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux

D. V. Dmitriev, D. A. Kolosovsky, E. V. Fedosenko, A. I. Toropov and K. S. Zhuravlev p. 823 abstract

Model of a Terahertz Quantum-Cascade Laser Based on Two-Dimensional Plasmons

A. A. Dubinov and V. Ya. Aleshkin p. 828 abstract

Sol–Gel Derived Photonic Crystals BaTiO₃/SiO₂

N. V. Gaponenko, P. A. Kholov, Yu. D. Karnilava, E. I. Lashkovskaya, V. A. Labunov, I. L. Martynov, E. V. Osipov, A. A. Chistyakov, N. I. Kargin, T. F. Raichenok and S. A. Tikhomirov p. 831 abstract

Manifestations of Resonant-Tunneling Processes and Random Potential Fluctuations with the Participation of Quantum-Dot Levels in the Photocurrent Relaxation of p–i–n GaAs/AlAs Heterostructures

Yu. N. Khanin and E. E. Vdovin p. 835 abstract

GaSb-Based Thermophotovoltaic Converters of IR Selective Emitter Radiation

V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, M. V. Nakhimovich and M. Z. Shvarts p. 840 abstract

Modification of the Electronic Properties of the n-InP (100) Surface with Sulfide Solutions

M. V. Lebedev, T. V. Lvova, A. N. Smirnov and V. Yu. Davydov p. 844 abstract

Silicon-Doped GaSb Grown by MOVPE in a Wide Range of the V/III Ratio

R. V. Levin, A. S. Vlasov and B. V. Pushnyi p. 850 abstract

Structural and Electrical Properties of PbS Films Doped with Cr³⁺ Ions during Chemical Deposition

L. N. Maskaeva, E. V. Mostovshchikova, V. I. Voronin, A. V. Pozdin, I. O. Selyanin, I. A. Anokhina and V. F. Markov p. 855 abstract

Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide

A. I. Okhapkin, S. A. Kraev, E. A. Arkhipova, V. M. Daniltsev, O. I. Khrykin, P. A. Yunin and M. N. Drozdov p. 865 abstract

Transverse Nernst–Ettingshausen Effect in the Two–Dimensional Electron Gas of a Doubly Periodic Semiconductor Superlattice

A. A. Perov and P. V. Pikunov p. 869 abstract

Contents

Semiconductors