Contents

Semiconductors

Vol. 54, No. 11, 2020

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Estimates of the Elastic, Dielectric, and Optical Characteristics of a Cubic BAs Single Crystal

S. Yu. Davydov p. 1377  abstract

Electronic Properties of Semiconductors

Two- and Three-Photon Linear-Circular Dichroism in Cubic-Symmetry Semiconductors

V. R. Rasulov, R. Ya. Rasulov, R. R. Sultonov and B. B. Akhmedov p. 1381  abstract

Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory

V. V. Emtsev and G. A. Oganesyan p. 1388  abstract

Spectroscopy, Interaction with Radiation

Resonance Light Scattering by Optical Phonons in Diamond Crystal with Nitogen-Vacancy Centres

B. H. Bairamov, V. V. Toropov and F. B. Bairamov p. 1395  abstract

Optimal Estimation of Schottky Diode Parameters Using Advanced Swarm Intelligence Algorithms

A. Rabehi, B. Nail, H. Helal, A. Douara, A. Ziane, M. Amrani, B. Akkal and Z. Benamara p. 1398  abstract

Surfaces, Interfaces, and Thin Films

Fabrication of a Ge–GeS:Nd Heterojunction and Investigation of the Spectral Characteristics

A. S. Alekperov, A. O. Dashdemirov, N. A. Ismayilova and S. H. Jabarov p. 1406  abstract

Adsorption of Group-I and -VII Atoms on Silicon-Carbide Polytypes

S. Yu. Davydov and O. V. Posrednik p. 1410  abstract

Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra

G. B. Galiev, E. A. Klimov, S. S. Pushkarev, A. A. Zaytsev and A. N. Klochkov p. 1417  abstract

Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva and D. M. Muradkabilov p. 1424  abstract

Optical Parameters of Both As2S3 and As2Se3 Thin Films from Ultraviolet to the Near-Infrared via Variable-Angle Spectroscopic Ellipsometer

F. Abdel-Wahab, I. M. Ashraf and F. B. M. Ahmed p. 1430  abstract

Growth and Characterization of ZnO and Al-Doped ZnO Thin Films by a Homemade Spray Pyrolysis

Y. Larbah, M. Adnane and B. Rahal p. 1439  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Dependence of the Electrophysical Characteristics of Metal–Ferroelectric–Semiconductor Structures on the Field-Electrode Material

M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov and G. V. Chucheva p. 1445  abstract

Manganese-Doped ZnS QDs: an Investigation into the Optimal Amount of Doping

S. Tomar, S. Gupta, S. Mukherjee, A. Singh, S. Kumar and R. K. Choubey p. 1450  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Comparison of the Bulk and Surface Properties of InBV–ZnS Semiconductor Solid Solutions

I. A. Kirovskaya, R. V. Ekkert, I. Yu. Umansky, A. O. Ekkert and O. V. Kropotin p. 1459  abstract

Synthesis of Silicon-Carbide Nanoparticles by the Laser Pyrolysis of a Mixture of Monosilane and Acetylene

I. A. Ershov, L. D. Iskhakova, V. I. Krasovskii, F. O. Milovich, S. I. Rasmagin and V. I. Pustovoi p. 1467  abstract

Physics of Semiconductor Devices

Influence of the Surface Morphology of the Microwave Microstrip Line on Its Transmission Performance

N. A. Torkhov, A. A. Kokolov and L. I. Babak p. 1472  abstract

Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions

E. V. Kalinina, M. F. Kudoyarov, I. P. Nikitina, E. V. Ivanova and V. V. Zabrodskii p. 1478  abstract

Performance Investigation of Organic Thin Film Transistor on Varying Thickness of Semiconductor Material: An Experimentally Verified Simulation Study

S. K. Jain, A. M. Joshi and D. Bharti p. 1483  abstract

Dual Material Gate Engineering to Reduce DIBL in Cylindrical Gate All Around Si Nanowire MOSFET for 7-nm Gate Length

Sanjay, B. Prasad and Anil Vohra p. 1490  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Two-Stage Synthesis of Structured Microsystems Based on Zinc-Oxide Nanorods by Ultrasonic Spray Pyrolysis and the Low-Temperature Hydrothermal Method

A. A. Ryabko, A. I. Maximov, V. N. Verbitskii, V. S. Levitskii, V. A. Moshnikov and E. I. Terukov p. 1496  abstract

XXVIII International Symposium “Nanostructures: Physics and Technology”, Minsk, Republic of Belarus, September, 2020. Excitons in Nanostructures

Modeling of Exciton Exchange Interaction in GaAs/AlGaAs Quantum Wells

E. S. Khramtsov, B. F. Gribakin, A. V. Trifonov and I. V. Ignatiev p. 1503  abstract

Coupling of Quantum-Well Excitons to Plasmons in One-Dimensional Metal Nanocylinder Gratings

A. V. Korotchenkov p. 1506  abstract

Polarization Conversion in MoS2 Flakes

L. V. Kotova, A. V. Platonov, A. V. Poshakinskiy and T. V. Shubina p. 1509  abstract

Energy Spectrum in a Shallow GaAs/AlGaAs Quantum Well Probed by Spectroscopy of Nonradiative Broadening of Exciton Resonances

A. S. Kurdyubov, B. F. Gribakin, A. V. Mikhailov, A. V. Trifonov, Yu. P. Efimov, S. A. Eliseev, V. A. Lovtcius and I. V. Ignatiev p. 1514  abstract

Spin-Valley Dynamics of Interlayer Excitons in Heterobilayers MoxW1–xSe2/WSe2

A. D. Liubomirov, V. Kravtsov and R. V. Cherbunin p. 1518  abstract

Thermodynamics of the Ideal Two-Dimensional Magnetoexciton Gas with Linear Dispersion Law

S. A. Moskalenko, I. V. Podlesny, I. A. Zubac and B. V. Novikov p. 1522  abstract