Contents
Semiconductors
Vol. 35, No. 11, 2001
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Physical Foundations of Metastable Impurity Center Reconstruction in Semiconductors
D. E. Onopko and A. I. Ryskin p. 1223 abstract
A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon
by a Dual Pair Mechanism
O. V. Aleksandrov p. 1231 abstract
Electronic and Optical Properties of Semiconductors
The Impurity Optical Absorption and Conduction Band Structure in 6H-SiC
I. S. Gorban and A. P. Krokhmal p. 1242 abstract
Magnetic Properties of Pb1  xGexTe Alloys Doped with Ytterbium
E. P. Skipetrov, N. A. Chernova, L. A. Skipetrova, A. V. Golubev, and E. I. Slynko p. 1249 abstract
On the Charge Transport Mechanism in n-InSb Films
Yu. A. Nikolskip. 1252 abstract
Effect of Bismuth Impurity on Carrier Density in PbSe:Bi:Se Epitaxial Layers
V. A. Zykov, T. A. Gavrikova, V. I. Ilin, S. A. Nemov, and P. V. Savintsev p. 1254 abstract
Photoelectric Phenomena in (cxa1 
x)-Si:H/c-Si Heterostructures
H. Mell, Yu. A. Nikolaev, V. Yu. Rud, Yu. V. Rud, and E. I. Terukov p. 1259 abstract
A Pulsed Synthesis of -FeSi2 Layers on Silicon Implanted with Fe+ Ions
R. I. Batalov, R. M. Bayazitov, E. I. Terukov, V. Kh. Kudoyarova, G. Weiser, and H. Kuehne p. 1263 abstract
Semiconductor Structures, Interfaces, and Surfaces
GenerationRecombination and Diffusion Currents in HgMnTe n+p Junctions
L. A. Kosyachenko, A. V. Markov, S. E. Ostapov, and I. M. Rarenko p. 1270 abstract
Effect of Surface Orientation
of CdxHg1  xTe Crystals on the
Properties
of Surface Anodic Oxides
V. G. Sredin, Yu. S. Mezin, and V. M. Ukrozhenko p. 1279 abstract
Photosensitivity of a-C:H/c-Si Heterojunctions
V. G. Baryshnikov, Yu. A. Nikolaev, V. Yu. Rud, Yu. V. Rud, and E. I. Terukov p. 1282 abstract
Reverse Current in Graded-Gap pn Structure with Nonmonotonic Coordinate Dependence
of the Band Gap
B. S. Sokolovskip. 1285 abstract
Role of Sulfide Ion Solvation in the Modification of GaAs Surface Electronic Structure
M. V. Lebedev p. 1291 abstract
Low-Dimensional Systems
Analogue of Gunn Effect in Tunneling between Quantum Wells
with Different Mobilities
P. I. Biryulin, A. A. Gorbatsevich, V. V. Kapaev, Yu. V. Kopaev, and V. T. Trofimov p. 1300 abstract
Electron Nonelastic Scattering by Confined and Interface Polar Optical Phonons
in a Modulation-Doped AlGaAs/GaAs/AlGaAs Quantum Well
K. Poela p. 1305 abstract
Electrical Characteristics of Single-Gate Interference Transistors Based
on Various Semiconductor Materials
I. I. Abramov and A. I. Rahachou p. 1309 abstract
Medium-Range Order and Optoelectronic Properties of a Tetrahedrally
Coordinated Hydrogenated Amorphous Semiconductor
O. A. Golikova p. 1314 abstract
Structural and Photonic Properties of OpalGaN Nanocomposites
V. G. Golubev, D. A. Kurdyukov, A. V. Medvedev, A. B. Pevtsov,
L. M. Sorokin, and J. L. Hutchison p. 1320 abstract
Physics of Semiconductor Devices
MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, A. L. Stankevich, A. V. Lyutetski,
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, I. N. Arsentev, and I. S. Tarasov p. 1324 abstract
Photoluminescence Properties of Polycrystalline ZnO/CdS/CuInGaSe2 Solar Cells
at a Low Temperature
G. A. Medvedkin, E. I. Terukov, K. Sato, Yu. Hasegava, and K. Hirose p. 1329 abstract
Simulation of CurrentVoltage Characteristics of a Ferroelectric Field-Effect Transistor
L. S. Berman p. 1335 abstract
Improved Degradation Stability of BlueGreen IIVI Light-Emitting Diodes
with Excluded Nitrogen-Doped ZnSe-Based Layers
N. Yu. Gordeev, S. V. Ivanov, V. I. Kopchatov, I. I. Novikov, T. V. Shubina, N. D. Ilinskaya,
P. S. Kopev, G. Reuscher, A. Waag, and G. Landwehr p. 1340 abstract
Personalia
In Memory of Aleksei Petrovich Shotov p. 1345
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