Contents

Semiconductors

Vol. 53, No. 11, 2019

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

A. I. Titov, K. V. Karabeshkin, P. A. Karaseov and A. I. Struchkov p. 1415  abstract

Electronic Properties of Semiconductors

Temperature Coefficient of Movement of the Resonance Level of Iron in Pb1 – x – ySnxFeyTe Alloys

E. P. Skipetrov, B. B. Kovalev, L. A. Skipetrova, A. V. Knotko and V. E. Slynko p. 1419  abstract

Spectroscopy, Interaction with Radiation

Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions

S. G. Cherkova, V. A. Skuratov and V. A. Volodin p. 1427  abstract

Surfaces, Interfaces, and Thin Films

Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev and A. N. Krivonosov p. 1431  abstract

Quantum Corrections and Magnetotransport in 3D Dirac Semimetal Cd3 – xMnxAs2 Films

A. B. Mekhiya, A. A. Kazakov, L. N. Oveshnikov, A. B. Davydov, A. I. Ril, S. F. Marenkin and B. A. Aronzon p. 1439  abstract

Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon

D. M. Samosvat, O. P. Chikalova-Luzina and G. G. Zegrya p. 1445  abstract

Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films

P. N. Krylov, A. S. Alalykin, E. A. Durman, R. M. Zakirova and I. V. Fedotova p. 1457  abstract

Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films

M. N. Volochaev, Yu. E. Kalinin, M. A. Kashirin, V. A. Makagonov, S. Yu. Pankov and V. V. Bassarab p. 1465  abstract

Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy

G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnyi, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, Yu. A. Kudriavtsev, A. S. Vlasov, T. B. Popova, D. V. Chistyakov, V. I. Kuchinskii and V. I. Vasil’ev p. 1472  abstract

Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions

V. Yu. Davydov, V. N. Jmerik, E. M. Roginskii, Yu. E. Kitaev, Y. M. Beltukov, M. B. Smirnov, D. V. Nechaev, A. N. Smirnov, I. A. Eliseyev, P. N. Brunkov and S. V. Ivanov p. 1479  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality

A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, D. A. Sannikov, T. F. Yagafarov and A. E. Zhukov p. 1489  abstract

On the Anisotropic Trigger Electrical Properties of Two-Dimensional Superlattices

D. V. Zav’yalov, V. I. Konchenkov and S. V. Kryuchkov p. 1496  abstract

Amorphous, Vitreous, and Organic Semiconductors

Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System

A. I. Isayev, S. I. Mekhtiyeva, H. I. Mammadova and R. I. Alekberov p. 1500  abstract

Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity

S. N. Garibova, A. I. Isayev, S. I. Mekhtiyeva and S. U. Atayeva p. 1507  abstract

Spectra of SmS Films in the Far- and Mid-Infrared Regions

Yu. V. Ulashkevich, V. V. Kaminski, S. M. Soloviev and N. V. Sharenkova p. 1511  abstract

Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (${{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}$ = 21.5 mol %)

Yu. K. Undalov, E. I. Terukov and I. N. Trapeznikova p. 1514  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy

E. A. Lipkova, A. I. Efimova, K. A. Gonchar, D. E. Presnov, A. A. Eliseev, A. N. Lapshin and V. Yu. Timoshenko p. 1524  abstract

Physics of Semiconductor Devices

High-Voltage AlInGaN LED Chips

L. K. Markov, M. V. Kukushkin, A. S. Pavlyuchenko, I. P. Smirnova, G. V. Itkinson and O. V. Osipov p. 1529  abstract

Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells

M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts and N. A. Kalyuzhnyy p. 1535  abstract

Fabrication, Treatment, and Testing of Materials and Structures

On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique

K. A. Svit and K. S. Zhuravlev p. 1540  abstract

Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching

Ya. V. Levitskii, M. I. Mitrofanov, G. V. Voznyuk, D. N. Nikolayev, M. N. Mizerov and V. P. Evtikhiev p. 1545  abstract

On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates

P. V. Seredin, A. V. Fedyukin, V. A. Terekhov, K. A. Barkov, I. N. Arsentyev, A. D. Bondarev, E. V. Fomin and N. A. Pikhtin p. 1550  abstract

Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

I. D. Breev, A. N. Anisimov, A. A. Wolfson, O. P. Kazarova and E. N. Mokhov p. 1558  abstract