Contents

Semiconductors

Vol. 50, No. 11, 2016

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Hybrid AlGaAs/GaAs/AlGaAs Nanowires with a Quantum Dot Grown by Molecular Beam Epitaxy on Silicon

G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravleuv and I. P. Soshnikov p. 1421  abstract

Modulation of Intersubband Light Absorption and Interband Photoluminescence in Double GaAs/AlGaAs Quantum Wells under Strong Lateral Electric Fields

R. M. Balagula, M. Ya. Vinnichenko, I. S. Makhov, D. A. Firsov and L. E. Vorobjev p. 1425  abstract

Optical Spectroscopy of a Resonant Bragg Structure with InGaN/GaN Quantum Wells

A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, V. V. Lundin and A. F. Tsatsulnikov p. 1431  abstract

Stimulated Emission in Heterostructures with Double InGaAs/GaAsSb/GaAs Quantum Wells, Grown on GaAs and Ge/Si(001) Substrates

A. N. Yablonsky, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin, V. G. Shengurov, B. N. Zvonkov, O. V. Vikhrova, N. V. Baidus’ and Z. F. Krasil’nik p. 1435  abstract

Heavily Doped GaAs:Te Layers Grown by MOVPE Using Diisopropyl Telluride as a Source

V. M. Daniltsev, E. V. Demidov, M. N. Drozdov, Yu. N. Drozdov, S. A. Kraev, E. A. Surovegina, V. I. Shashkin and P. A. Yunin p. 1439  abstract

Fabrication of MnGa/GaAs Contacts for Optoelectronics and Spintronics Applications

M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, P. B. Demina, Yu. V. Usov, D. E. Nikolichev, R. N. Kryukov and S. Yu. Zubkov p. 1443  abstract

Germanium Laser with a Hybrid Surface Plasmon Mode

A. A. Dubinov p. 1449  abstract

On the Crystal Structure and Thermoelectric Properties of Thin Si1 – xMnx Films

I. V. Erofeeva, M. V. Dorokhin, V. P. Lesnikov, A. V. Zdoroveishchev, A. V. Kudrin, D. A. Pavlov and U. V. Usov p. 1453  abstract

Terahertz Absorption and Emission upon the Photoionization of Acceptors in Uniaxially Stressed Silicon

R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D. V. Kozlov and V. N. Shastin p. 1458  abstract

Anharmonic Bloch Oscillations of Electrons in Electrically Biased Superlattices

K. A. Ivanov, E. I. Girshova, M. A. Kaliteevski, S. J. Clark and A. J. Gallant p. 1463  abstract

Effect of Thermal Annealing on the Photoluminescence of Structures with InGaAs/GaAs Quantum Wells and a Low-Temperature GaAs Layer δ-Doped with Mn

I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin and M. N. Drozdov p. 1469  abstract

Electroluminescence from MIS Silicon-Based Light Emitters with Arrays of Self-Assembled Ge(Si) Nanoislands

V. B. Shmagin, S. N. Vdovichev, E. E. Morozova, A. V. Novikov, M. V. Shaleev, D. V. Shengurov and Z. F. Krasilnik p. 1475  abstract

Anisotropy of the Magnetocapacitance of Structures Based on PbSnTe:In/BaF2 Films

A. E. Klimov and V. S. Epov p. 1479  abstract

Method for Narrowing the Directional Pattern of an InGaAs/GaAs/AlGaAs Multiwell Heterolaser

N. V. Baydus, S. M. Nekorkin, D. A. Kolpakov, A. V. Ershov, V. Ya. Aleshkin, A. A. Dubinov and A. A. Afonenko p. 1488  abstract

Edge and Defect Luminescence of Powerful Ultraviolet InGaN/GaN Light-Emitting Diodes

V. T. Shamirzaev, V. A. Gaisler and T. S. Shamirzaev p. 1493  abstract

Effect of a Low-Temperature-Grown GaAs Layer on InAs Quantum-Dot Photoluminescence

A. N. Kosarev, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato and B. R. Semyagin p. 1499  abstract

On the Condensation of Exciton Polaritons in Microcavities Induced by a Magnetic Field

V. P. Kochereshko, D. V. Avdoshina, P. Savvidis, S. I. Tsintzos, Z. Hatzopoulos, A. V. Kavokin, L. Besombes and H. Mariette p. 1506  abstract

Epitaxial GaN Layers Formed on Langasite Substrates by the Plasma-Assisted MBE Method

D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorohodov, M. V. Shaleev, M. N. Drozdov, O. I. Khrykin, O. A. Buzanov, V. V. Alenkov, P. I. Folomin and A. B. Gritsenko p. 1511  abstract

Dynamic Generation of Spin-Wave Currents in Hybrid Structures

I. I. Lyapilin and M. S. Okorokov p. 1515  abstract

Numerical Simulation of the Properties of Solar Cells Based on GaPNAs/Si Heterostructures and GaN Nanowires

A. M. Mozharov, D. A. Kudryashov, A. D. Bolshakov, G. E. Cirlin, A. S. Gudovskikh and I. S. Mukhin p. 1521  abstract

Simulation of Electron Transport in GaAs/AlAs Superlattices with a Small Number of Periods for the THz Frequency Range

D. G. Pavelyev, A. P. Vasilev, V. A. Kozlov, Yu. I. Koschurinov, E. S. Obolenskaya, S. V. Obolensky and V. M. Ustinov p. 1526  abstract

Magnetospectroscopy of Double HgTe/CdHgTe Quantum Wells

L. S. Bovkun, S. S. Krishtopenko, A. V. Ikonnikov, V. Ya. Aleshkin, A. M. Kadykov, S. Ruffenach, C. Consejo, F. Teppe, W. Knap, M. Orlita, B. Piot, M. Potemski, N. N. Mikhailov, S. A. Dvoretskii and V. I. Gavrilenko p. 1532  abstract

Study of the Structures of Cleaved Cross Sections by Raman Spectroscopy

S. M. Plankina, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, N. Yu. Konnova, A. V. Nezhdanov and I. Yu. Pashenkin p. 1539  abstract

Wide-Aperture Total Absorption of a Terahertz Wave in a Nanoperiodic Graphene-Based Plasmon Structure

O. V. Polischuk, V. S. Melnikova and V. V. Popov p. 1543  abstract

Investigation of the Thermal Stability of Metastable GeSn Epitaxial Layers

V. P. Martovitsky, Yu. G. Sadofyev, A. V. Klekovkin, V. V. Saraikin and I. S. Vasil’evskii p. 1548  abstract

Nanoheterostructures with Improved Parameters for High-Speed and Efficient Plasmon-Polariton Light Emitting Schottky Diodes

N. V. Baidus, V. A. Kukushkin, B. N. Zvonkov and S. M. Nekorkin p. 1554  abstract