Contents
Semiconductors

Vol. 47, No. 11, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013

Generation of Coherent Terahertz Radiation by Polarized Electron–Hole Pairs
in GaAs/AlGaAs Quantum Wells

A. V. Andrianov, P. S. Alekseev, G. V. Klimko, S. V. Ivanov, V. L. Shcheglov,
M. A. Sedova, and A. O. Zakhar’in p. 1433  abstract

Specific Features of the Spectra and Relaxation Kinetics of Long-Wavelength
Photoconductivity in Narrow-Gap HgCdTe Epitaxial Films
and Heterostructures with Quantum Wells

V. V. Rumyantsev, A. V. Ikonnikov, A. V. Antonov, S. V. Morozov, M. S. Zholudev,
K. E. Spirin, V. I. Gavrilenko, S. A. Dvoretskii, and N. N. Mikhailov p. 1438  abstract

Simulation of Ultraviolet- and Soft X-Ray-Pulse Generation as a Result
of Cooperative Recombination of Excitons in Diamond Nanocrystals
Embedded in a Polymer Film

V. A. Kukushkin p. 1442  abstract

Tunneling Effects in Tilted Magnetic Fields in n-InGaAs/GaAs Structures
with Strongly Coupled Double Quantum Wells

Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, S. M. Podgornykh,
M. V. Yakunin, and B. N. Zvonkov p. 1447  abstract

Pseudomorphic GeSn/Ge (001) Heterostructures

A. A. Tonkikh, V. G. Talalaev, and P. Werner p. 1452  abstract

Spin-Polarized Currents in the Tunnel Contact of a Normal Conductor
and a Two-Dimensional Topological Insulator

A. A. Sukhanov and V. A. Sablikov p. 1456  abstract

Relaxation Kinetics of Impurity Photoconductivity in p-Si:B
with Various Levels of Doping and Degrees of Compensation in High Electric Fields

S. V. Morozov, V. V. Rumyantsev, K. E. Kudryavtsev, V. I. Gavrilenko, and D. V. Kozlov p. 1461  abstract

Metastable-State Formation as a Possible Mechanism
for the Conductance Anomalies in Mesoscopic Structures

V. A. Sablikov p. 1465  abstract

Effect of Rapid Thermal Annealing on the Parameters of Gallium-Arsenide
Low-Barrier Diodes with Near-Surface -Doping

A. V. Murel, V. M. Daniltsev, E. V. Demidov, M. N. Drozdov, and V. I. Shashkin p. 1470  abstract

Waveguide Effect of GaAsSb Quantum Wells in a Laser Structure Based on GaAs

V. Ya. Aleshkin, A. A. Afonenko, N. V. Dikareva, A. A. Dubinov,
K. E. Kudryavtsev, S. V. Morozov, and S. M. Nekorkin p. 1475  abstract

Manifestation of the Purcell Effect in the Conductivity
of InAs/AlSb Short-Period Superlattices

M. S. Kagan, I. V. Altukhov, A. N. Baranov, N. D. Il’inskaya, S. K. Paprotskiy,
R. Teissier, and A. A. Usikova p. 1478  abstract

Antimony Segregation in Stressed SiGe Heterostructures Grown
by Molecular Beam Epitaxy

M. N. Drozdov, A. V. Novikov, and D. V. Yurasov p.1481  abstract

Rashba Spin Splitting and Cyclotron Resonance in Strained InGaAs/InP Heterostructures
with a Two-Dimensional Electron Gas

K. P. Kalinin, S. S. Krishtopenko, K. V. Maremyanin, K. E. Spirin, V. I. Gavrilenko,
A. A. Biryukov, N. V. Baidus, and B. N. Zvonkov p. 1485  abstract

Exciton Condensation in Microcavities under Three-Dimensional Quantization Conditions

V. P. Kochereshko, A. V. Platonov, P. Savvidis, A. V. Kavokin, J. Bleuse, and H. Mariette p. 1492  abstract

Time-resolved Photoluminescence from Self-Assembled Ge(Si) Islands
in Multilayer SiGe/Si and SiGe/SOI Structures

A. N. Yablonskiy, N. A. Baidakova, A. V. Novikov, and D. N. Lobanov p. 1496  abstract

Features of Impurity Photoconductivity in Si:Er/Si Epitaxial Diodes

A. V. Antonov, K. E. Kudryavtsev, D. V. Shengurov, V. B. Shmagin, and Z. F. Krasilnik p. 1500  abstract

Spectral-Kinetic Properties of Heterostructures with GaAsSb/InGaAs/GaAs-Based
Quantum Wells Emitting in the Range of 1.0–1.2 m

S. V. Morozov, D. I. Kryzhkov, V. Ya. Aleshkin, B. N. Zvonkov, and O. I. Vikhrova p. 1504  abstract

Effect of Spin–Orbit Coupling on the Structure
of the Electron Ground State in Silicon Nanocrystals

A. A. Konakov, N. V. Kurova, and V. A. Burdov p. 1508  abstract

Dependence of the Carrier Concentration on the Current
in Mid-Infrared Injection Lasers with Quantum Wells

M. Ya. Vinnichenko, L. E. Vorobjev, D. A. Firsov, M. O. Mashko, R. M. Balagula,
G. Belenky, L. Shterengas, and G. Kipshidze p. 1513  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Features of the Electroluminescence Spectra of Quantum-Confined Silicon
p⁺–n Heterojunctions in the Infrared Spectral Region

N. T. Bagraev, L. E. Klyachkin, R. V. Kuzmin, A. M. Malyarenko, and V. A. Mashkov p. 1517  abstract

Specific Features of Electroluminescence in Heterostructures
with InSb Quantum Dots in an InAs Matrix

Ya. A. Parkhomenko, E. V. Ivanov, and K. D. Moiseev p. 1523  abstract

Efficient Electro-Optic Semiconductor Medium Based on Type-II Heterostructures

V. A. Shchukin, N. N. Ledentsov, L. Ya. Karachinsky, S. A. Blokhin,
I. I. Novikov, N. A. Bogoslovskiy, and A. V. Savelyev p. 1528  abstract

Investigation of the Transition Layer in 3C-SiC/6H-SiC Heterostructures

A. A. Lebedev, M. V. Zamorianskaya, S. Yu. Davydov, D. A. Kirilenko, S. P. Lebedev,
L. M. Sorokin, D. B. Shustov, and M. P. Scheglov p.1539  abstract

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