Contents
Semiconductors

Vol. 46, No. 11, 2012

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

XVI Symposium “Nanophysics and Nanoelectronics”,
Nizhni Novgorod, March 12–16, 2012

On the Problem of Lasing in Traps for the Bose Condensation of Dipolar Excitons

P. A. Kalinin, V. V. Kocharovsky, and Vl. V. Kocharovsky p. 1351  abstract

Barrier-Height Modification in Schottky Silicon Diodes
with Highly Doped 3D and 2D Layers

A. V. Murel, A. V. Novikov, V. I. Shashkin, and D. V. Yurasov p. 1358  abstract

Study of Lifetimes and Photoconductivity Relaxation in Heterostructures
with Hg_xCd_1–xTe/Cd_yHg_1–yTe Quantum Wells

S. V. Morozov, M. S. Joludev, A. V. Antonov, V. V. Rumyantsev, V. I. Gavrilenko,
V. Ya. Aleshkin, A. A. Dubinov, N. N. Mikhailov, S. A. Dvoretskiy, O. Drachenko,
S. Winnerl, H. Schneider, and M. Helm p. 1362  abstract

Comparison of Different Concepts of InAs Quantum Dot Growth
on GaAs for 1.3-m-Range Lasers

Yu. G. Sadofyev p. 1367  abstract

Determination of the Excitation Cross Section of Photoluminescence from an Er Ion
in the Case of Homogeneous and Inhomogeneous Optical Excitation

B. A. Andreev, Z. F. Krasilnik, D. I. Kryzhkov, V. P. Kuznetsov, and A. N. Yablonskiy p. 1372  abstract

Determination of the Heterojunction Type in Structures with GaAsSb/GaAs Quantum Wells
with Various Antimony Fractions by Optical Methods

S. V. Morozov, D. I. Kryzhkov, V. I. Gavrilenko, A. N. Yablonsky, D. I. Kuritsyn,
D. M. Gaponova, Yu. G. Sadofyev, B. N. Zvonkov, and O. V. Vihrova p. 1376  abstract

Prototypes of Photovoltaic Cells Based on Subphthalocyanine with a Lower Buffer Layer

G. L. Pakhomov, V. V. Travkin, A. N. Tropanova, E. Yu. Gudkov, and Yu. N. Drozdov p. 1381  abstract

Features of Impurity-Photoconductivity Relaxation in Boron-Doped Silicon

V. V. Rumyantsev, S. V. Morozov, K. E. Kudryavtsev, V. I. Gavrilenko, and D. V. Kozlov p. 1387  abstract

Analysis of the Composition of (Al,Ga)As Alloys by Secondary Ion Mass Spectroscopy
and X-Ray Diffractometry

Yu. N. Drozdov, M. N. Drozdov, V. M. Daniltsev, O. I. Khrikin, and P. A. Yunin p. 1392  abstract

Features of the Persistent Photoconductivity in InAs/AlSb Heterostructures
with Double Quantum Wells and a Tunneling-Transparent Barrier

K. E. Spirin, K. P. Kalinin, S. S. Krishtopenko, K. V. Maremyanin,
V. I. Gavrilenko, and Yu. G. Sadofyev p. 1396  abstract

Study of Methods for Lowering the Lasing Frequency
of a Terahertz Quantum-Cascade Laser Based on Two Quantum Wells

D. V. Ushakov, Yu. G. Sadofyev, and N. Samal p. 1402  abstract

Mechanism of the Subband Excitation of Photoluminescence from Erbium Ions
in Silicon under High-Intensity Optical Pumping

A. N. Yablonskiy, B. A. Andreev, D. I. Kryzhkov, V. P. Kuznetsov,
D. V. Shengurov, and Z. F. Krasilnik p. 1407  abstract

Diagnostics of Quantum Cascade Structures by Optical Methods in the Near Infrared Region

D. I. Kryzhkov, S. V. Morozov, D. M. Gaponova, S. M. Sergeev, K. I. Kuritsyn,
K. V. Maremyanin, V. I. Gavrilenko, and Yu. G. Sadofyev p.1411 abstract

Intraband Photoconductivity Induced by Interband Illumination
in InAs/GaAs Heterostructures with Quantum Dots

A. V. Antonov, V. M. Daniltsev, M. N. Drozdov, Yu. N. Drozdov,
L. D. Moldavskaya, and V. I. Shashkin p. 1415  abstract

Effect of Silicon Spacer Thickness on the Electroluminescence
of Multilayer Structures with Self-Assembled Ge(Si)/Si(001) Islands

D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, M. V. Shaleev, D. V. Shengurov,
Z. F. Krasilnik, N. D. Zakharov, and P. Werner p. 1418  abstract

Electro-Optical Trap for Dipolar Excitons

A. V. Gorbunov and V. B. Timofeev p. 1423  abstract

Deposition of GaN Layers with a Lowered Dislocation Density by Molecular-Beam Epitaxy

A. N. Alexeev, D. M. Krasovitsky, S. I. Petrov, and V. P. Chaly p. 1429  abstract

Electron Auger Spectroscopy and Reflectance Anisotropy Spectroscopy
of Monolayer Nitride Films on (001) Surfaces of GaAs and GaSb Crystals

V. L. Berkovits, A. B. Gordeeva, T. V. L’vova, and V. P. Ulin p. 1432  abstract

Investigation of the Structure of the Ground State of Lithium Donor Centers
in Silicon Enriched in ²⁸Si Isotope and the Influence of Internal Strain
in the Crystal on This Structure

A. A. Ezhevskii, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov,
N. V. Abrosimov, and H. Riemann p. 1437  abstract

Tunneling and Current Characteristics of Two-Miniband Superlattice

Yu. Yu. Romanova, M. L. Orlov, and Yu. A. Romanov^† p. 1443  abstract

Parametric Generation of High-Frequency Harmonics in Semiconductor Superlattices

Yu. Yu. Romanova p. 1451  abstract

Light-Emitting Tunneling Nanostructures Based on Quantum Dots in a Si and GaAs Matrix

V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner,
B. V. Novikov, L. V. Asryan , B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev,
Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, and G. E. Cirlin p.1460 abstract

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